RESUMEN
Organotin photoresists have shown promise for next-generation lithography because of their high extreme ultraviolet (EUV) absorption cross sections, their radiation sensitive chemistries, and their ability to enable high-resolution patterning. To better understand both temperature- and radiation-induced reaction mechanisms, we have studied a model EUV photoresist, which consists of a charge-neutral butyl-tin cluster. Temperature-programmed desorption (TPD) showed very little outgassing of the butyl-tin resist in ultrahigh vacuum and excellent thermal stability of the butyl groups. TPD results indicated that decomposition of the butyl-tin resist was first order with a fairly constant decomposition energy between 2.4 and 3.0 eV, which was determined by butyl group desorption. Electron-stimulated desorption (ESD) showed that butyl groups were the primary decomposition product for electron kinetic energies expected during EUV exposures. X-ray photoelectron spectroscopy was performed before and after low-energy electron exposure to evaluate the compositional and chemical changes in the butyl-tin resists after interaction with radiation. The effect of molecular oxygen during ESD experiments was evaluated, and it was found to enhance butyl group desorption during exposure and resulted in a significant increase in the ESD cross section by over 20%. These results provide mechanistic information that can be applied to organotin EUV photoresists, where a significant increase in photoresist sensitivity may be obtained by varying the ambient conditions during EUV exposures.
RESUMEN
Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (ß-NaSn13) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in ß-NaSn13 resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the ß-NaSn13 clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in ß-NaSn13 photoresists and provide mechanistic insights for EUV photolithography.
RESUMEN
Titanium dioxide/graphene composites have recently been demonstrated to improve the photocatalytic activity of TiO2 in visible light. To better understand the interactions of TiO2 with graphene we have investigated the growth of TiO2 nanoclusters on single-layer graphene/Ru(0001) using scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). Deposition of Ti in the O2 background at 300 K resulted in the formation of nanoclusters nucleating on intrinsic defects in the graphene (Gr) layer. The saturation nanocluster density decreased as the substrate temperature was increased from 300 to 650 K, while deposition at 700 K resulted in the significant etching of the Gr layer. We have also prepared nanoclusters with Ti2O3 stoichiometry using lower O2 pressures at 650 K. Thermal stability of the TiO2 nanoclusters prepared at 300 K was evaluated with AES and STM. No change in oxidation state for the TiO2 nanoclusters or etching of the Gr layer was observed up to â¼900 K. Annealing studies revealed that cluster ripening proceeds via a Smoluchowski mechanism below 800 K. Above 800 K, the changes in cluster shapes indicate an onset of diffusion within the clusters. At even higher temperatures, the nanoclusters undergo reduction to TiOx (x ≈ 1-1.5) which is accompanied by oxidation and etching of the Gr. Our studies demonstrate that highly thermally stable TiOx nanoclusters of controlled composition and morphology can be prepared on Gr supports.
RESUMEN
Dodecameric (Sn12 ) and hexameric topologies dominate monoalkyltin-oxo cluster chemistry. Their condensation, triggered by radiation exposure, recently produced unprecedented patterning performance in EUV lithography. A new cluster topology was crystallized from industrial n-BuSnOOH, and additional characterization techniques indicate other clusters are present. Single-crystal X-ray analysis reveals a ß-Keggin cluster, which is known but less common than other Keggin isomers in polyoxometalate and polyoxocation chemistry. The structure is formulated [NaO4 (BuSn)12 (OH)3 (O)9 (OCH3 )12 (Sn(H2 O)2 )] (ß-NaSn13 ). SAXS, NMR, and ESI MS differentiate ß-NaSn13 , Sn12 , and other clusters present in crude "n-BuSnOOH" and highlight the role of Na as a template for alkyltin Keggin clusters. Unlike other alkyltin clusters that are cationic, ß-NaSn13 is neutral. Consequently, it stands as a unique model system, absent of counterions, to study the transformation of clusters to films and nanopatterns.
