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1.
Neural Netw ; 165: 1050-1057, 2023 Aug.
Artículo en Inglés | MEDLINE | ID: mdl-37478527

RESUMEN

In-memory computing techniques are used to accelerate artificial neural network (ANN) training and inference tasks. Memory technology and architectural innovations allow efficient matrix-vector multiplications, gradient calculations, and updates to network weights. However, on-chip learning for edge devices is quite challenging due to the frequent updates. Here, we propose using an analog and temporary on-chip memory (ATOM) cell with controllable retention timescales for implementing the weights of an on-chip training task. Measurement results for Read-Write timescales are presented for an ATOM cell fabricated in GlobalFoundries' 45 nm RFSOI technology. The effect of limited retention and its variability is evaluated for training a fully connected neural network with a variable number of layers for the MNIST hand-written digit recognition task. Our studies show that weight decay due to temporary memory can have benefits equivalent to regularization, achieving a ∼33% reduction in the validation error (from 3.6% to 2.4%). We also show that the controllability of the decay timescale can be advantageous in achieving a further ∼26% reduction in the validation error. This strongly suggests the utility of temporary memory during learning before on-chip non-volatile memories can take over for the storage and inference tasks using the neural network weights. We thus propose an algorithm-circuit codesign in the form of temporary analog memory for high-performing on-chip learning of ANNs.


Asunto(s)
Algoritmos , Redes Neurales de la Computación , Aprendizaje , Reconocimiento en Psicología , Cognición
2.
IEEE Trans Biomed Circuits Syst ; 12(4): 884-893, 2018 08.
Artículo en Inglés | MEDLINE | ID: mdl-29993721

RESUMEN

Spiking neural networks (SNNs) are being explored in an attempt to mimic brain's capability to learn and recognize at low power. Crossbar architecture with highly scalable resistive RAM or RRAM array serving as synaptic weights and neuronal drivers in the periphery is an attractive option for the SNN. Recognition (akin to "reading" the synaptic weight) requires small amplitude bias applied across the RRAM to minimize conductance change. Learning (akin to "writing" or updating the synaptic weight) requires large amplitude bias pulses to produce a conductance change. The contradictory bias amplitude requirement to perform reading and writing simultaneously and asynchronously, akin to biology, is a major challenge. Solutions suggested in the literature rely on time-division-multiplexing of read and write operations based on clocks, or approximations ignoring the reading when coincidental with writing. In this paper, we overcome this challenge and present a clock-less approach wherein reading and writing are performed in different frequency domains. This enables learning and recognition simultaneously on an SNN. We validate our scheme in SPICE circuit simulator by translating a two-layered feed-forward Iris classifying SNN to demonstrate software-equivalent performance. The system performance is not adversely affected by a voltage dependence of conductance in realistic RRAMs, despite departing from linearity. Overall, our approach enables direct implementation of biological SNN algorithms in hardware.


Asunto(s)
Redes Neurales de la Computación , Algoritmos , Programas Informáticos
3.
Sci Rep ; 7(1): 8257, 2017 08 15.
Artículo en Inglés | MEDLINE | ID: mdl-28811481

RESUMEN

Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~1011 neuron based) large neural networks.

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