The thermal stability and degradation mechanism of Cu/Mo nanomultilayers.

The microstructural evolution of Cu/Mo nanomultilayers upon annealing was investigated by X-ray diffraction and transmission electron microscopy. The isothermal annealing process in the temperature ranges of 300-850°C was conducted to understand the thermal behavior of the sample and follow the transformation into a nanocomposite. Annealing at 600°C led to the initiation of grain grooving in the investigated nanomultilayer, and it degraded into a spheroidized nanocomposite structure at 800°C. The sample kept the as-deposited Cu {111}//Mo{110} fiber texture up to 850°C. The residual stress was investigated to explain microstructure changes. The activation energy of degradation kinetics of Cu/Mo nanomultilayers was determined to understand the rate-determining mechanism for the degradation of nanolaminate structures.

This study investigates the microstructural evolution of Cu/Mo nanomultilayers during vacuum annealing up to 85°C and provides important insights into their thermal stability and degradation mechanisms for development and application.

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays.

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing times increase greatly when expanding the exposure area. In order to bring nanowire arrays one step closer to the wafer-scale we take a different approach and replace patterned nanoscale holes with Si nanopillar arrays. The method is compatible with photolithography methods such as phase-shift lithography or deep ultraviolet (DUV) stepper lithography. We provide clear evidence on the advantage of using nanopillars as opposed to nanoscale holes both for the control on the growth mechanisms and for the scalability. We identify the engineering of the contact angle as the key parameter to optimize the yield. In particular, we demonstrate how nanopillar oxidation is key to stabilize the Ga catalyst droplet and engineer the contact angle. We demonstrate how the position of the triple phase line at the SiO2/Si as opposed to the SiO2/vacuum interface is central for a successful growth. We compare our experiments with simulations performed in surface evolver™ and observe a strong correlation. Large-scale arrays using phase-shift lithography result in a maximum local vertical yield of 67% and a global chip-scale yield of 40%. We believe that, through a greater control over key processing steps typically achieved in a semiconductor fab it is possible to push this yield to 90+% and open perspectives for deterministic nanowire phase engineering at the wafer-scale.

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties.

Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cells due to the combination of suitable optoelectronic properties and an abundance of the constituting elements in the Earth's crust. The generation of periodic superstructures along the nanowire axis could provide an additional mechanism to tune their functional properties. Here we present the vapour-liquid-solid growth of zinc phosphide superlattices driven by periodic heterotwins. This uncommon planar defect involves the exchange of Zn by In at the twinning boundary. We find that the zigzag superlattice formation is driven by reduction of the total surface energy of the liquid droplet. The chemical variation across the heterotwin does not affect the homogeneity of the optical properties, as measured by cathodoluminescence. The basic understanding provided here brings new propsects on the use of II-V semiconductors in nanowire technology.

3D Ordering at the Liquid-Solid Polar Interface of Nanowires.

The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic thermodynamics, neglecting the atomistic nature of the liquid-solid interface. Here, experimental observations and molecular dynamics simulations are employed to identify the 3D nature of an atomic-scale ordering of liquid Ga in contact with solid GaAs in a nanowire growth configuration. An interplay between the liquid ordering and the formation of a new bilayer is revealed, which, contrary to the established theories, suggests that the preference for a certain polarity and polytypism is influenced by the atomic structure of the interface. The conclusions of this work open new avenues for the understanding of crystal growth, as well as other processes and systems involving a liquid-solid interface.

Questioning liquid droplet stability on nanowire tips: from theory to experiment.

Liquid droplets sitting on nanowire (NW) tips constitute the starting point of the vapor-liquid-solid method of NW growth. Shape and volume of the droplet have been linked to a variety of growth phenomena ranging from the modification of growth direction, NW orientation, crystal phase, and even polarity. In this work we focus on numerical and theoretical analysis of the stability of liquid droplets on NW tips, explaining the peculiarity of this condition with respect to the wetting of planar surfaces. We highlight the role of droplet pinning at the tip in engineering the contact angle. Experimental results on the characteristics of In droplets of variable volume sitting on the tips or side facets of InAs NWs are also provided. This work contributes to the fundamental understanding of the nature of droplets contact angle at the tip of NWs and to the improvement of the engineering of such nanostructures.

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality.

Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. Polarity engineering provides an additional pathway to modulate the structural and optical properties of semiconductor nanowires. In this work, we demonstrate for the first time the growth of Ga-assisted GaAs nanowires with (111)A-polarity, with a yield of up to ∼50%. This goal is achieved by employing highly Ga-rich conditions which enable proper engineering of the energies of A and B-polar surfaces. We also show that A-polarity growth suppresses the stacking disorder along the growth axis. This results in improved optical properties, including the formation of AlGaAs quantum dots with two orders or magnitude higher brightness. Overall, this work provides new grounds for the engineering of nanowire growth directions, crystal quality and optical functionality.