Thin-Film Engineering of Mechanical Fragmentation Properties of Atomic-Layer-Deposited Metal Oxides.

Mechanical fracture properties were studied for the common atomic-layer-deposited Al2O3, ZnO, TiO2, ZrO2, and Y2O3 thin films, and selected multilayer combinations via uniaxial tensile testing and Weibull statistics. The crack onset strains and interfacial shear strains were studied, and for crack onset strain, TiO2/Al2O3 and ZrO2/Al2O3 bilayer films exhibited the highest values. The films adhered well to the polyimide carrier substrates, as delamination of the films was not observed. For Al2O3 films, higher deposition temperatures resulted in higher crack onset strain and cohesive strain values, which was explained by the temperature dependence of the residual strain. Doping Y2O3 with Al or nanolaminating it with Al2O3 enabled control over the crystal size of Y2O3, and provided us with means for improving the mechanical properties of the Y2O3 films. Tensile fracture toughness and fracture energy are reported for Al2O3 films grown at 135 °C, 155 °C, and 220 °C. We present thin-film engineering via multilayering and residual-strain control in order to tailor the mechanical properties of thin-film systems for applications requiring mechanical stretchability and flexibility.

Dynamic Plasticity and Failure of Microscale Glass: Rate-Dependent Ductile-Brittle-Ductile Transition.

Glass has been recently envisioned as a stronger and more robust alternative to silicon in microelectromechanical system applications, including high-frequency resonators and switches. Identifying the dynamic mechanical properties of microscale glass is thus vital for understanding their ability to withstand shocks and vibrations in such demanding applications. However, despite nearly half a century of research, the micromechanical properties of glass and amorphous materials in general are primarily limited to quasi-static strain rates below ∼0.1/s. Here, we report the in situ high-strain-rate experiments of fused silica micropillars inside a scanning electron microscope at strain rates up to 1335/s. A remarkable ductile-brittle-ductile failure mode transition was observed at increasing strain rates from 0.0008 to 1335/s as the deformation flow transitions between homogeneous-serrated-homogeneous regimes. Detailed surface topography investigation of the tested micropillars revealed that at the intermediate strain rate (<∼6/s) serrated flow regime, the load drops are caused by the sequential propagation of individual shear bands. Further, analytical calculations and finite element simulations suggest that the atomistic mechanism responsible for the homogeneous stress-strain curves at very high strain rates (>∼64/s) can be attributed to the simultaneous nucleation of multiple shear bands along with dissipative deformation heating. This unique rate-dependent deformation behavior of the glass micropillars highlights the importance and need of extending such microscale high-strain-rate studies to other amorphous materials such as metallic glasses and amorphous metals and alloys. Such investigations can provide critical insights about the damage tolerance and crashworthiness of these materials for real-life applications.

Towards the third dimension in direct electron beam writing of silver.

Carboxylates constitute an extremely promising class of precursor compounds for the electron beam induced deposition of silver. In this work both silver 2,2-dimethylbutyrate and silver pentafluoropropionate were investigated with respect to their dwell-time-dependent deposition behavior and growth characteristics. While silver 2,2-dimethylbutyrate showed a strong depletion in the center of the impinging electron beam profile hindering any vertical growth, silver pentafluoropropionate indicated a pronounced dependency of the deposit height on the dwell time. Truly three-dimensional silver structures could be realized with silver pentafluoropropionate. The pillars were polycrystalline with silver contents of more than 50 atom % and exhibit strong Raman enhancement. This constitutes a promising route towards the direct electron beam writing of three-dimensional plasmonic device parts from the gas phase.

Comparative study of post-growth annealing of Cu(hfac)2, Co2(CO)8 and Me2Au(acac) metal precursors deposited by FEBID.

Non-noble metals, such as Cu and Co, as well as noble metals, such as Au, can be used in a number modern technological applications, which include advanced scanning-probe systems, magnetic memory and storage, ferroelectric tunnel junction memristors, metal interconnects for high performance integrated circuits in microelectronics and nano-optics applications, especially in the areas of plasmonics and metamaterials. Focused-electron-beam-induced deposition (FEBID) is a maskless direct-write tool capable of defining 3-dimensional metal deposits at nanometre scale for above applications. However, codeposition of organic ligands when using organometallic precursors is a typical problem that limits FEBID of pure metal nanostructures. In this work, we present a comparative study using a post-growth annealing protocol at 100, 200, and 300 °C under high vacuum on deposits obtained from Co2(CO)8, Cu(II)(hfac)2, and Me2Au(acac) to study improvements on composition and electrical conductivity. Although the as-deposited material was similar for all precursors, metal grains embedded in a carbonaceous matrix, the post-growth annealing results differed. Cu-containing deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit for temperatures above 100 °C, due to the migration of Cu atoms from the carbonaceous matrix containing carbon, oxygen, and fluorine atoms. The average size of the Cu crystals doubles between 100 and 300 °C of annealing temperature, while the composition remains constant. In contrast, for Co-containing deposits oxygen release was observed upon annealing, while the carbon content remained approximately constant; the cobalt atoms coalesced to form a metallic film. The as-deposited Au-containing material shows subnanometric grains that coalesce at 100 °C, maintaining the same average size at annealing temperatures up to 300 °C. Raman analysis suggests that the amorphous carbonaceous matrix of the as-written Co, Cu and Au deposits turned into nanocrystalline graphite with comparable crystal sizes of 12-14 nm at 300 °C annealing temperature. However, we observed a more effective formation of graphite clusters in Co- than in Cu- and Au-containing deposits. The graphitisation has a minor influence on the electrical conductivity improvements of Co-C deposits, which is attributed to the high as-deposited Co content and the related metal grain percolation. On the contrary, electrical conductivity improvements by factors of 30 and 12 for, respectively, Cu-C and Au-C deposits with low metal content are mainly attributed to the graphitisation. This relatively simple vacuum-based post-growth annealing protocol may be useful for other precursors as it proved to be efficient in reliably tuning the electrical properties of as-deposited FEBID materials. Finally, a H2-assisted gold purification protocol is demonstrated at temperatures around 300 °C by fully removing the carbon matrix and drastically reducing the electrical resistance of the deposit.

Gas-assisted silver deposition with a focused electron beam.

Focused electron beam induced deposition (FEBID) is a flexible direct-write method to obtain defined structures with a high lateral resolution. In order to use this technique in application fields such as plasmonics, suitable precursors which allow the deposition of desired materials have to be identified. Well known for its plasmonic properties, silver represents an interesting candidate for FEBID. For this purpose the carboxylate complex silver(I) pentafluoropropionate (AgO2CC2F5) was used for the first time in FEBID and resulted in deposits with high silver content of up to 76 atom %. As verified by TEM investigations, the deposited material is composed of pure silver crystallites in a carbon matrix. It showed good electrical properties and a strong Raman signal enhancement. Interestingly, silver crystal growth presents a strong dependency on electron dose and precursor refreshment.

Nonaqueous Sol-Gel Synthesis of Anatase Nanoparticles and Their Electrophoretic Deposition in Porous Alumina.

Titanium dioxide (TiO2) nanoparticles were synthesized by nonaqueous sol-gel route using titanium tetrachloride and benzyl alcohol as the solvent. The obtained 4 nm-sized anatase nanocrystals were readily dispersible in various polar solvents allowing for simple preparation of colloidal dispersions in water, isopropyl alcohol, dimethyl sulfoxide, and ethanol. Results showed that dispersed nanoparticles have acidic properties and exhibit positive zeta-potential which is suitable for their deposition by cathodic electrophoresis. Aluminum substrates were anodized in phosphoric acid in order to produce porous anodic oxide layers with pores ranging from 160 to 320 nm. The resulting nanopores were then filled with TiO2 nanoparticles by electrophoretic deposition. The influence of the solvent, the electric field, and the morphological characteristics of the alumina layer (i.e., barrier layer and porosity) were studied.

Direct Electron Beam Writing of Silver-Based Nanostructures.

Direct writing utilizing a focused electron beam constitutes an interesting alternative to resist-based techniques, as it allows for precise and flexible growth onto any conductive substrate in a single-step process. One important challenge, however, is the identification of appropriate precursors which allow for deposition of the material of choice, e.g., for envisaged applications in nano-optics. In this regard the coinage metal silver is of particular interest since it shows a relatively high plasma frequency and, thus, excellent plasmonic properties in the visible range. By utilizing the precursor compound AgO2Me2Bu, direct writing of silver-based nanostructures via local electron beam induced deposition could be realized for the first time. Interestingly, the silver deposition was strongly dependent on electron dose; at low doses of 30 nC/µm2 a dominant formation of pure silver crystals was observed, while at higher electron doses around 104 nC/µm2 large carbon contents were measured. A scheme for the enhanced silver deposition under low electron fluxes by an electronic activation of precursor dissociation below thermal CVD temperature is proposed and validated using material characterization techniques. Finally, the knowledge gained was employed to fabricate well-defined two-dimensional deposits with maximized silver content approaching 75 at. %, which was achieved by proper adjustment of the deposition parameters. The corresponding deposits consist of plasmonically active silver crystallites and demonstrate a pronounced Raman signal enhancement of the carbonaceous matrix.

Atomic Layer Deposition of Titanium Oxide on Single-Layer Graphene: An Atomic-Scale Study toward Understanding Nucleation and Growth.

Controlled synthesis of a hybrid nanomaterial based on titanium oxide and single-layer graphene (SLG) using atomic layer deposition (ALD) is reported here. The morphology and crystallinity of the oxide layer on SLG can be tuned mainly with the deposition temperature, achieving either a uniform amorphous layer at 60 °C or ∼2 nm individual nanocrystals on the SLG at 200 °C after only 20 ALD cycles. A continuous and uniform amorphous layer formed on the SLG after 180 cycles at 60 °C can be converted to a polycrystalline layer containing domains of anatase TiO2 after a postdeposition annealing at 400 °C under vacuum. Using aberration-corrected transmission electron microscopy (AC-TEM), characterization of the structure and chemistry was performed on an atomic scale and provided insight into understanding the nucleation and growth. AC-TEM imaging and electron energy loss spectroscopy revealed that rocksalt TiO nanocrystals were occasionally formed at the early stage of nucleation after only 20 ALD cycles. Understanding and controlling nucleation and growth of the hybrid nanomaterial are crucial to achieving novel properties and enhanced performance for a wide range of applications that exploit the synergetic functionalities of the ensemble.

Annealing-Based Electrical Tuning of Cobalt-Carbon Deposits Grown by Focused-Electron-Beam-Induced Deposition.

An effective postgrowth electrical tuning, via an oxygen releasing method, to enhance the content of non-noble metals in deposits directly written with gas-assisted focused-electron-beam-induced deposition (FEBID) is presented. It represents a novel and reproducible method for improving the electrical transport properties of Co-C deposits. The metal content and electrical properties of Co-C-O nanodeposits obtained by electron-induced dissociation of volatile Co2(CO)8 precursor adsorbate molecules were reproducibly tuned by applying postgrowth annealing processes at 100 °C, 200 °C, and 300 °C under high-vacuum for 10 min. Advanced thin film EDX analysis showed that during the annealing process predominantly oxygen is released from the Co-C-O deposits, yielding an atomic ratio of Co:C:O = 100:16:1 (85:14:1) with respect to the atomic composition of as-written Co:C:O = 100:21:28 (67:14:19). In-depth Raman analysis suggests that the amorphous carbon contained in the as-written deposit turns into graphite nanocrystals with size of about 22.4 nm with annealing temperature. Remarkably, these microstructural changes allow for tuning of the electrical resistivity of the deposits over 3 orders of magnitude from 26 mΩ cm down to 26 µΩ cm, achieving a residual resistivity of ρ2K/ρ300 K = 0.56, close to the value of 0.53 for pure Co films with similar dimensions, making it especially interesting and advantageous over the numerous works already published for applications such as advanced scanning-probe systems, magnetic memory, storage, and ferroelectric tunnel junction memristors, as the graphitic matrix protects the cobalt from being oxidized under an ambient atmosphere.

Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices.

Quantum efficiency measurements of state of the art Cu(In,Ga)Se2 (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al2 O3 layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu2 (Zn,Sn)(S,Se)4 .

Morphology and crystallinity control of ultrathin TiO2 layers deposited on carbon nanotubes by temperature-step atomic layer deposition.

Carbon nanotubes (CNTs) coated with titanium oxide (TiO2) have generated considerable interest over the last decade and become a promising nanomaterial for a wide range of energy applications. The efficient use of the outstanding electrical properties of this nanostructure relies heavily on the quality of the interface and the thickness and morphology of the TiO2 layer. However, complete surface coverage of the chemically inert CNTs and appropriate control of the morphology of the TiO2 layer have not been achieved so far. Here, we report a new strategy to obtain ultrathin TiO2 coatings deposited by "Temperature-step" Atomic Layer Deposition (TS-ALD) with complete surface coverage of non-functionalized multiwall carbon nanotubes (MWCNTs) and controlled morphology and crystallinity of the TiO2 film. This strategy consists of adjusting the temperature during the ALD deposition to obtain the desired morphology. Complete coverage of long non-functionalized MWCNTs with conformal anatase layers was obtained by using a low temperature of 60 °C during the nucleation stage followed by an increase to 220 °C during the growth stage. This resulted in a continuous and amorphous TiO2 layer, covered with a conformal anatase coating. Starting with the deposition at 220 °C and reducing to 60 °C resulted in sporadic crystal grains at the CNT/TiO2 interface covered with an amorphous TiO2 layer. The results were accomplished through an extensive study of nucleation and growth of titanium oxide films on MWCNTs, of which a detailed characterization is presented in this work.