RESUMEN
The synthesis of high surface-area colloidal assemblies of calixarene-phosphine-capped nanoporous gold is reported under reductive electrochemical conditions. These materials uniquely exhibit a remarkably thin wall thickness down to 10 nm, while possessing pore sizes on the order of up to hundreds of nanometers, which can be controlled via choice of organic ligand.
RESUMEN
The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth.
RESUMEN
Ultraviolet (UV) light exposure is connected to both physical and psychological diseases. As such, there is significant interest in developing sensors that can detect UV light in the mW/cm2 intensity range with a high signal-to-noise ratio. In this Letter, we demonstrate a UV sensor based on a silica integrated optical microcavity that has a linear operating response in both the forward and backward directions from 14 to 53 mW/cm2. The sensor response agrees with the developed predictive theory based on a thermodynamic model. Additionally, the signal-to-noise ratio is above 100 at physiologically relevant intensity levels.
Asunto(s)
Fenómenos Ópticos , Rayos Ultravioleta , Dióxido de SilicioRESUMEN
We report the fabrication and characterization of straight and serpentine low loss trapezoidal silica waveguides integrated on a silicon substrate. The waveguide channel was defined using a dual photo-lithography and buffered HF etching and isolated from the silicon substrate using an isotropic silicon etchant. The waveguide is air-clad and thus has a core-cladding effective index contrast of approximately 25%. Measured at 658, 980 and 1550 nm, the propagation loss was found to be 0.69, 0.59, and 0.41 dB/cm respectively, with a critical bending radius less than 375 µm. The waveguide's polarization behavior was investigated both theoretically and experimentally. Additionally, the output power shows a linear response with input power up to 200 mW.