Cassegrain-based concentrator with tailored mirrors.

In this study, we design a Cassegrain-based concentrator with tailored mirrors. The proposed concentrator comprises a primary optical element (POE) and a secondary optical element (SOE). The POE is a parabolic concave mirror and the SOE is a hyperbolic convex mirror. In order to achieve uniform irradiance distribution without a homogenizer, the POE is tailored and tilted to generate a uniform distribution by overlapping the energy well. The Cassegrain-based concentrator with tailored mirrors can achieve a geometric concentration ratio of 1236×, a concentration ratio of 1034×, an optical efficiency of 83.66%, an acceptance angle of ±0.38∘, a uniformity of 7.87, and an aspect ratio of 0.254.

Nine-sector three-stage Fresnel lens concentrator: publisher's note.

This publisher's note amends the author listing in Appl. Opt.58, 122 (2019)APOPAI0003-693510.1364/AO.58.000122.

Performance comparison of III-V//Si and III-V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding.

The integration of III-V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficult to obtain high-efficiency solar cells grown as epilayers on Si and InP substrates. In this paper, two types of devices, including GaInP/GaAs stacked on Si (GaInP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAs//InGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the two samples are made at room temperature. The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm2, while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52 V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.

Nine-sector three-stage Fresnel lens concentrator.

In this paper, we design a three-stage Fresnel lens concentrator with a low f number. The proposed concentrator consists of a primary optical element (POE) and a second optical element (SOE). The nine-sector three-stage Fresnel lens is composed of three types of triangular prisms: the refractive triangular prism, single total internal reflection triangular prism, and double total internal reflection triangular prism. In order to increase the uniformity and acceptance angle of the POE coupled to the SOE, the SOE is also divided into nine sectors. Finally, it is found that this nine-sector three-stage Fresnel lens concentrator can achieve a concentration ratio of 1000×; the uniformity is 25.8, optical efficiency is 81.8%, f number is 0.46, and acceptance angle is ±0.73°.

Facile Growth of Cu2ZnSnS4 Thin-Film by One-Step Pulsed Hybrid Electrophoretic and Electroplating Deposition.

The use of costly and rare metals such as indium and gallium in Cu(In,Ga)Se2 (CIGS) based solar cells has motivated research into the use of Cu2ZnSnS4 (CZTS) as a suitable replacement due to its non-toxicity, abundance of compositional elements and excellent optical properties (1.5 eV direct band gap and absorption coefficient of ~10(4) cm(-1)). In this study, we demonstrate a one-step pulsed hybrid electrodeposition method (PHED), which combines electrophoretic and electroplating deposition to deposit uniform CZTS thin-films. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm(2), 0.43 and 0.59%, respectively.

Large scale and orientation-controllable nanotip structures on CuInS2, Cu(In,Ga)S2, CuInSe2, and Cu(In,Ga)Se2 by low energy ion beam bombardment process: growth and characterization.

One-step facile methodology to create nanotip arrays on chalcopyrite materials (such as CuInS2, Cu(In,Ga)S2, CuInSe2, and Cu(In,Ga)Se2) via a low energy ion beam bombardment process has been demonstrated. The mechanism of formation for nanotip arrays has been proposed by sputtering yields of metals and reduction of metals induced by the ion beam bombardment process. The optical reflectance of these chalcopyrite nanotip arrays has been characterized by UV-vis spectrophotometer and the efficient light-trapping effect has been observed. Large scale (∼4'') and high density (10(10) tips/cm(2)) of chalcopyrite nanotip arrays have been obtained by using low ion energy (< 1 kV), short processing duration (< 30 min), and template-free. Besides, orientation and length of these chalcopyrite nanotip arrays are controllable. Our results can be the guide for other nanostructured materials fabrication by ion sputtering and are available for industrial production as well.

Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules.

We report for the first time a successful fabrication and operation of an InAs/GaAs quantum dot based intermediate band solar cell concentrator photovoltaic (QD-IBSC-CPV) module to the IEC62108 standard with recorded power conversion efficiency of 15.3%. Combining the measured experimental results at Underwriters Laboratory (UL®) licensed testing laboratory with theoretical simulations, we confirmed that the operational characteristics of the QD-IBSC-CPV module are a consequence of the carrier dynamics via the intermediate-band at room temperature.

Improved efficiency of a large-area Cu(In,Ga)Se2 solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process.

A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 × 30 cm(2)) Cu(In,Ga)Se2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (Voc) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd(Cu) participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe2) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.

Investigation of bulk hybrid heterojunction solar cells based on Cu(In,Ga)Se2 nanocrystals.

This work presents the systematic studies of bulk hybrid heterojunction solar cells based on Cu(In, Ga)Se2 (CIGS) nanocrystals (NCs) embedded in poly(3-hexylthiophene) matrix. The CIGS NCs of approximately 17 nm in diameter were homogeneously blended with P3HT layer to form an active layer of a photovoltaic device. The blend ratios of CIGS NCs to P3HT, solvent effects on thin film morphologies, interface between P3HT/CIGS NCs and post-production annealing of devices were investigated, and the best performance of photovoltaic devices was measured under AM 1.5 simulated solar illumination (100 mW/cm2).

Single stage transmission type broadband solar concentrator.

In this paper, a single stage solar cell concentrator is designed and discussed. The proposed concentrator consists of refraction prisms and total internal reflection prisms in the inner and outer areas, respectively. In order to compensate for dispersion, all odd zones gather the light onto the -D position, while all even zones gather the light onto the + D position. Finally, the hybrid concentrator achieves optical efficiency of 89.8% for normally incident light without an antireflection coating. An acceptance angle of +/- 0.78 degree at 1 dB loss is achieved without using additional secondary optics. In addition, the fabrication tolerance is also analyzed.