Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain the integrity of the δ layer make developing a robust electrical contact method a significant challenge to realizing the potential of atomically precise devices. We demonstrate a method for electrical contact using Pd2Si formed at the temperature of silicon overgrowth (250 °C), minimizing the diffusive impact on the δ layer. We use the transfer length method to show our Pd2Si contacts have very high yield (99.7% +0.2% -1.5%) and low resistivity (272±41Ωµm) in contacting mesa-etched Si:P δ layers. We also present three terminal measurements of low contact resistance (<1 kΩ) to devices written by STM hydrogen depassivation lithography with similarly high yield (100% +0% -3.2%).

Effect of device design on charge offset drift in Si/SiO2 single electron devices.

We have measured the low-frequency time instability known as charge offset drift of Si/SiO2 single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance Cm between defects and the quantum dot, and increase in the total defect capacitance Cd due to the top gate. These results depart from the prominent interpretation that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in developing SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.

Preparation of a novel silk microfiber covered by AgCl nanoparticles with antimicrobial activity.

We prepared silk fibroin microfibers in which silver chloride (AgCl) nanoparticles were dispersed, by sequential dipping of microfibers obtained using alkaline hydrolysis in alternating solutions of silver nitrate and potassium chloride. Scanning and transmission electron microscopy showed an increase in nanoparticle size and quantity with increase in dipping cycles and solution concentration, but ultrasound irradiation did not affect nanoparticle formation. The presence of cubic AgCl crystals was confirmed by energy dispersive X-ray spectroscopy and X-ray diffractometry. Differential scanning calorimetry and Fourier transform infrared spectroscopy revealed that the nanoparticles do not affect the microfiber properties. The growth of Gram-negative (Escherichia coli) and Gram-positive (Staphylococcus aureus) bacteria was inhibited by microfiber covered with AgCl nanoparticles. This antimicrobial activity allows to use microfiber as a reinforced or surface additive biomaterial. Microsc. Res. Tech. 80:272-279, 2017. © 2016 Wiley Periodicals, Inc.

Strongly Metallic Electron and Hole 2D Transport in an Ambipolar Si-Vacuum Field Effect Transistor.

We report experiment and theory on an ambipolar gate-controlled Si(111)-vacuum field effect transistor where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune the system from being a 2D electron system at positive gate voltage to a 2D hole system at negative gate voltage. The electron (hole) conductivity manifests strong (moderate) metallic temperature dependence with the conductivity decreasing by a factor of 8 (2) between 0.3 K and 4.2 K with the peak electron mobility (∼18 m2/V s) being roughly 20 times larger than the peak hole mobility (in the same sample). Our theory explains the data well using random phase approximation screening of background Coulomb disorder, establishing that the observed metallicity is a direct consequence of the strong temperature dependence of the effective screened disorder.