RESUMEN
As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate processing, we could only show that the GaN substrate could be sliced by a laser and that the sliced GaN substrate could be reused. In this study, we newly investigated the applicability of this method as a device fabrication process. We demonstrated the thinning of GaN-on-GaN high-electron-mobility transistors (HEMTs) using a laser slicing technique. Even when the HEMTs were thinned by laser slicing to a thickness of 50 mm after completing the fabrication process, no significant fracture was observed in these devices, and no adverse effects of laser-induced damage were observed on electrical characteristics. This means that the laser slicing process can be applied even after device fabrication. It can also be used as a completely new semiconductor process for fabricating thin devices with thicknesses on the order of 10 mm, while significantly reducing the consumption of GaN substrates.
RESUMEN
We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.
RESUMEN
We experimentally demonstrate space-code-division multiple access (space-CDMA) based twodimensional (2-D) parallel optical interconnections by using image fibers and 8 x 8 vertical-cavity surface-emitting laser (VCSEL)/photo diode (PD) arrays. Two spatially encoded four-bit (2 x 2) parallel optical signals were emitted fiom 2-D VCSEL arrays and transmitted through image fibers. The encoded signals were multiplexed by an image-fiber coupler and detected by a 2-D PD array on the receiver side. The receiver recovered the intended parallel signal by decoding the signal. The transmission speed was 64 Mbps/ch (total throughput: 512 Mbps). Bit-error-rate (BER) measurement with a laterally misaligned PD array showed the array had a misalignment tolerance of 25 microm for a BER performance of 10(-9).