The impact of crystal phase transition on the hardness and structure of kidney stones.

Calcium oxalate kidney stones, the most prevalent type of kidney stones, undergo a multi-step process of crystal nucleation, growth, aggregation, and secondary transition. The secondary transition has been rather overlooked, and thus, the effects on the disease and the underlying mechanism remain unclear. Here, we show, by periodic micro-CT images of human kidney stones in an ex vivo incubation experiment, that the growth of porous aggregates of calcium oxalate dihydrate (COD) crystals triggers the hardening of the kidney stones that causes difficulty in lithotripsy of kidney stone disease in the secondary transition. This hardening was caused by the internal nucleation and growth of precise calcium oxalate monohydrate (COM) crystals from isolated urine in which the calcium oxalate concentrations decreased by the growth of COD in closed grain boundaries of COD aggregate kidney stones. Reducing the calcium oxalate concentrations in urine is regarded as a typical approach for avoiding the recurrence. However, our results revealed that the decrease of the concentrations in closed microenvironments conversely promotes the transition of the COD aggregates into hard COM aggregates. We anticipate that the suppression of the secondary transition has the potential to manage the deterioration of kidney stone disease.

Quantitative analysis of calcium oxalate monohydrate and dihydrate for elucidating the formation mechanism of calcium oxalate kidney stones.

We sought to identify and quantitatively analyze calcium oxalate (CaOx) kidney stones on the order of micrometers, with a focus on the quantitative identification of calcium oxalate monohydrate (COM) and dihydrate (COD). We performed Fourier transform infrared (FTIR) spectroscopy, powder X-ray diffraction (PXRD), and microfocus X-ray computed tomography measurements (microfocus X-ray CT) and compared their results. An extended analysis of the FTIR spectrum focusing on the 780 cm-1 peak made it possible to achieve a reliable analysis of the COM/COD ratio. We succeeded in the quantitative analysis of COM/COD in 50-µm2 areas by applying microscopic FTIR for thin sections of kidney stones, and by applying microfocus X-ray CT system for bulk samples. The analysis results based on the PXRD measurements with micro-sampling, the microscopic FTIR analysis of thin sections, and the microfocus X-ray CT system observation of a bulk kidney stone sample showed roughly consistent results, indicating that all three methods can be used complementarily. This quantitative analysis method evaluates the detailed CaOx composition on the preserved stone surface and provides information on the stone formation processes. This information clarifies where and which crystal phase nucleates, how the crystals grow, and how the transition from the metastable phase to the stable phase proceeds. The phase transition affects the growth rate and hardness of kidney stones and thus provides crucial clues to the kidney stone formation process.

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates.

The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakage currents. Micrometer-scale platinum/GaN Schottky contacts were selectively fabricated on screw- and mixed-TD-related etch pits classified based on the pit size. Current-voltage (I-V) data acquired using conductive atomic force microscopy showed that very few of the screw TDs generated anomalously large reverse leakage currents. An analysis of the temperature dependence of the I-V characteristics established that the leakage current conduction mechanisms for the leaky screw TDs differed from those for the other screw and mixed TDs. Specifically, anomalous current leakage was generated by Poole-Frenkel emission and trap-assisted tunneling via distinctive trap states together with Fowler-Nordheim tunneling, with the mechanism changing according to variations in temperature and applied voltage. The leaky TDs were identified as Burgers vector b = 1c closed-core screw TDs having a helical morphology similar to that of other screw TDs generating small leakage currents. Based on the results, we proposed that the atomic-scale modification of the dislocation core structure related to interactions with point defects via dislocation climbing caused different leakage characteristics of the TDs.

Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm-3.

Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-voltage and high-frequency applications. For the development of GaN devices, nondestructive characterization of electrical properties particularly for carrier densities in the order of 1019 cm-3 or higher is highly favorable. In this study, we investigated GaN single crystals with different carrier densities of up to 1020 cm-3 using THz time-domain ellipsometry in reflection configuration. The p- and s-polarized THz waves reflected off the GaN samples are measured and then corrected based on the analysis of multiple waveforms measured with a rotating analyzer. We show that performing such analysis leads to a ten times higher precision than by merely measuring the polarization components. As a result, the carrier density and mobility parameters can be unambiguously determined even at high conductivities.

High surface laser-induced damage threshold of SrB4O7 single crystals under 266-nm (DUV) laser irradiation.

Under 266-nm (deep ultraviolet, DUV) laser irradiation, an SrB4O7 (SBO) single crystal has been found to exhibit a surface laser-induced damage threshold (LIDT) of ∼ 16.4 J/cm2, which is higher than those of a synthetic silica glass (4.8 J/cm2) and a calcium fluoride (CaF2) crystal (11.4 J/cm2). By catalyst-referred etching (CARE), the LIDT of an SBO crystal can also be improved to around 24.1 J/cm2, which is 1.4 and 6.0 times higher compared to an unetched crystal and a silica glass, respectively. With high surface LIDTs, SBO single crystals can then be used as optical window materials for high-power DUV laser systems.

Microflow system promotes acetaminophen crystal nucleation.

It is known that interfaces have various impacts on crystallization from a solution. Here, we describe crystallization of acetaminophen using a microflow channel, in which two liquids meet and form a liquid-liquid interface due to laminar flow, resulting in uniform mixing of solvents on the molecular scale. In the anti-solvent method, the microflow mixing promoted the crystallization more than bulk mixing. Furthermore, increased flow rate encouraged crystal formation, and a metastable form appeared under a certain flow condition. This means that interface management by the microchannel could be a beneficial tool for crystallization and polymorph control.