Toward Ideal Low-Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management.

The pursuit of sub-1-nm field-effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative. However, the non-idealities, such as excess low-frequency noise (LFN) in 2D FETs, present substantial hurdles to their realization and commercialization. In this study, ideal LFN characteristics in monolayer MoS2 FETs are attained by engineering the metal-2D semiconductor contact and the subgap density of states (DOS). By probing non-ideal contact resistance effects using CuS and Au electrodes, it is uncovered that excess contact noise in the high drain current (ID) region can be substantially reduced by forming a van der Waals junction with CuS electrodes. Furthermore, thermal annealing effectively mitigates sulfur vacancy-induced subgap density of states (DOS), diminishing excess noise in the low ID region. Through meticulous optimization of metal-2D semiconductor contacts and subgap DOS, alignment of 1/f noise with the pure carrier number fluctuation model is achieved, ultimately achieving the sought-after ideal LFN behavior in monolayer MoS2 FETs. This study underscores the necessity of refining excess noise, heralding improved performance and reliability of 2D electronic devices.

Tailored Synthesis of Heterogenous 2D TMDs and Their Spectroscopic Characterization.

Two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) show great potential across various applications. However, synthesizing large-scale structures poses challenges owing to the intricate growth parameters, forming unexpected hybrid film structures. Thus, precision in synthesis and thorough structural analysis are essential aspects. In this study, we successfully synthesized large-scale structured 2D transition metal dichalcogenides (TMDs) via chemical vapor deposition using metal oxide (WO3 and MoO3) thin films and a diluted H2S precursor, individual MoS2, WS2 films and various MoS2/WS2 hybrid films (Type I: MoxW1-xS2 alloy; Type II: MoS2/WS2 vdWH; Type III: MoS2 dots/WS2). Structural analyses, including optical microscopy, Raman spectroscopy, transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy, and cross-sectional imaging revealed that the A1g and E2g modes of WS2 and MoS2 were sensitive to structural variations, enabling hybrid structure differentiation. Type II showed minimal changes in the MoS2's A1g mode, while Types I and III exhibited a ~2.8 cm-1 blue shift. Furthermore, the A1g mode of WS2 in Type I displayed a 1.4 cm-1 red shift. These variations agreed with the TEM-observed microstructural features, demonstrating strain effects on the MoS2-WS2 interfaces. Our study provides insights into the structural features of diverse hybrid TMD materials, facilitating their differentiation through Raman spectroscopy.

Unusual Raman Enhancement Effect of Ultrathin Copper Sulfide.

In surface-enhanced Raman spectroscopy (SERS), 2D materials are explored as substrates owing to their chemical stability and reproducibility. However, they exhibit lower enhancement factors (EFs) compared to noble metal-based SERS substrates. This study demonstrates the application of ultrathin covellite copper sulfide (CuS) as a cost-effective SERS substrate with a high EF value of 7.2 × 104 . The CuS substrate is readily synthesized by sulfurizing a Cu thin film at room temperature, exhibiting a Raman signal enhancement comparable to that of an Au noble metal substrate of similar thickness. Furthermore, computational simulations using the density functional theory are employed and time-resolved photoluminescence measurements are performed to investigate the enhancement mechanisms. The results indicate that polar covalent bonds (Cu─S) and strong interlayer interactions in the ultrathin CuS substrate increase the probability of charge transfer between the analyte molecules and the CuS surface, thereby producing enhanced SERS signals. The CuS SERS substrate demonstrates the selective detection of various dye molecules, including rhodamine 6G, methylene blue, and safranine O. Furthermore, the simplicity of CuS synthesis facilitates large-scale production of SERS substrates with high spatial uniformity, exhibiting a signal variation of less than 5% on a 4-inch wafer.

Morphologically Controlled Synthesis of Reduced-Dimensional ZnO/Zn(OH)2 Nanosheets.

Conventional two-dimensional materials either have natural layered structures or are produced, with large surface areas, via physical or chemical synthesis. However, to form a two-dimensional material from a non-layered material, a method different from the existing ones is required. In this study, a surfactant-assisted method was utilized to synthesize Zn(OH)2 (a nonlayered transition metal oxide) nanosheets. This study described the synthesis of Zn(OH)2 nanosheets using an anionic sulfate layer and demonstrated a method of controlling the thickness and shape of the synthesized nanosheets by varying the surfactant concentration. Further, the characteristics of oxygen evolution reaction using ZnO/Zn(OH)2 nanosheets, obtained by annealing the synthesized sheets, as catalysts were studied.

Multifunctional-high resolution imaging plate based on hydrophilic graphene for digital pathology.

In the present study, we showed that hydrophilic graphene can serve as an ideal imaging plate for biological specimens. Graphene being a single-atom-thick semi-metal with low secondary electron emission, array tomography analysis of serial sections of biological specimens on a graphene substrate showed excellent image quality with improvedz-axis resolution, without including any conductive surface coatings. However, the hydrophobic nature of graphene makes the placement of biological specimens difficult; graphene functionalized with polydimethylsiloxane oligomer was fabricated using a simple soft lithography technique and then processed with oxygen plasma to provide hydrophilic graphene with minimal damage to graphene. High-quality scanning electron microscopy images of biological specimens free from charging effects or distortion were obtained, and the optical transparency of graphene enabled fluorescence imaging of the specimen; high-resolution correlated electron and light microscopy analysis of the specimen became possible with the hydrophilic graphene plate.

Tuning Schottky Barrier of Single-Layer MoS2 Field-Effect Transistors with Graphene Electrodes.

Two-dimensional materials have the potential to be applied in flexible and transparent electronics. In this study, single-layer MoS2 field-effect transistors (FETs) with Au/Ti-graphene heteroelectrodes were fabricated to examine the effect of the electrodes on the electrical properties of the MoS2 FETs. The contact barrier potential was tuned using an electric field. Asymmetrical gate behavior was observed owing to the difference between the MoS2 FETs, specifically between the MoS2 FETs with Au/Ti electrodes and those with graphene electrodes. The contact barrier of the MoS2 FETs with Au/Ti electrodes did not change with the electric field. However, the contact barrier at the MoS2-graphene interface could be modulated. The MoS2 FETs with Au/Ti-graphene electrodes exhibited enhanced on/off ratios (~102 times) and electron mobility (~2.5 times) compared to the MoS2 FETs with Au/Ti electrodes. These results could improve the understanding of desirable contact formation for high-performance MoS2 FETs and provide a facile route for viable electronic applications.

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111).

Large-area single-crystal monolayers of two-dimensional (2D) materials such as graphene1-3, hexagonal boron nitride (hBN)4-6 and transition metal dichalcogenides7,8 have been grown. hBN is considered to be the 'ideal' dielectric for 2D-materials-based field-effect transistors (FETs), offering the potential for extending Moore's law9,10. Although hBN thicker than a monolayer is more desirable as substrate for 2D semiconductors11,12, highly uniform and single-crystal multilayer hBN growth has yet to be demonstrated. Here we report the epitaxial growth of wafer-scale single-crystal trilayer hBN by a chemical vapour deposition (CVD) method. Uniformly aligned hBN islands are found to grow on single-crystal Ni (111) at early stage and finally to coalesce into a single-crystal film. Cross-sectional transmission electron microscopy (TEM) results show that a Ni23B6 interlayer is formed (during cooling) between the single-crystal hBN film and Ni substrate by boron dissolution in Ni. There are epitaxial relationships between hBN and Ni23B6 and between Ni23B6 and Ni. We also find that the hBN film acts as a protective layer that remains intact during catalytic evolution of hydrogen, suggesting continuous single-crystal hBN. This hBN transferred onto the SiO2 (300 nm)/Si wafer acts as a dielectric layer to reduce electron doping from the SiO2 substrate in MoS2 FETs. Our results demonstrate high-quality single-crystal  multilayered hBN over large areas, which should open up new pathways for making it a ubiquitous substrate for 2D semiconductors.

Electrochemical Transparency of Graphene.

In the present study, we used the electrochemical transparency of graphene to show that the direct intercalation of alkali-metal cations is not a prerequisite for the redox reaction of Prussian blue (PB). PB thin films passivated with monolayer graphene still underwent electrochemical redox reactions in the presence of alkali-metal ions (K+ or Na+) despite the inability of the cations to penetrate the graphene and be incorporated into the PB. Graphene passivation not only preserved the electrochemical activity of the PB but also substantially enhanced the stability of the PB. As a proof of concept, we showed that a transparent graphene electrode covering PB can be used as an excellent hydrogen peroxide transducer, thereby demonstrating the possibility of realizing an electrochemical sensor capable of long-term measurements.

Observation of Strong Interlayer Couplings in WS2/MoS2 Heterostructures via Low-Frequency Raman Spectroscopy.

Van der Waals (vdW) heterostructures based on two-dimensional (2D) transition metal dichalcogenides (TMDCs), particularly WS2/MoS2 heterostructures with type-II band alignments, are considered as ideal candidates for future functional optoelectronic applications owing to their efficient exciton dissociation and fast charge transfers. These physical properties of vdW heterostructures are mainly influenced by the interlayer coupling occurring at the interface. However, a comprehensive understanding of the interlayer coupling in vdW heterostructures is still lacking. Here, we present a detailed analysis of the low-frequency (LF) Raman modes, which are sensitive to interlayer coupling, in bilayers of MoS2, WS2, and WS2/MoS2 heterostructures directly grown using chemical vapor deposition to avoid undesirable interfacial contamination and stacking mismatch effects between the monolayers. We clearly observe two distinguishable LF Raman modes, the interlayer in-plane shear and out-of-plane layer-breathing modes, which are dependent on the twisting angles and interface quality between the monolayers, in all the 2D bilayered structures, including the vdW heterostructure. In contrast, LF modes are not observed in the MoS2 and WS2 monolayers. These results indicate that our directly grown 2D bilayered TMDCs with a favorable stacking configuration and high-quality interface can induce strong interlayer couplings, leading to LF Raman modes.

A Redox-Mediator-Integrated Flexible Micro-Supercapacitor with Improved Energy Storage Capability and Suppressed Self-Discharge Rate.

To effectively improve the energy density and reduce the self-discharging rate of micro-supercapacitors, an advanced strategy is required. In this study, we developed a hydroquinone (HQ)-based polymer-gel electrolyte (HQ-gel) for micro-supercapacitors. The introduced HQ redox mediators (HQ-RMs) in the gel electrolyte composites underwent additional Faradaic redox reactions and synergistically increased the overall energy density of the micro-supercapacitors. Moreover, the HQ-RMs in the gel electrolyte weakened the self-discharging behavior by providing a strong binding attachment of charged ions on the porous graphitized carbon electrodes after the redox reactions. The micro-supercapacitors with HQ gel (HQ-MSCs) showed excellent energy storage performance, including a high energy volumetric capacitance of 255 mF cm-3 at a current of 1 µA, which is 2.7 times higher than the micro-supercapacitors based on bare-gel electrolyte composites without HQ-RMs (b-MSCs). The HQ-MSCs showed comparatively low self-discharging behavior with an open circuit potential drop of 37% compared to the b-MSCs with an open circuit potential drop of 60% after 2000 s. The assembled HQ-MSCs exhibited high mechanical flexibility over the applied external tensile and compressive strains. Additionally, the HQ-MSCs show the adequate circuit compatibility within series and parallel connections and the good cycling performance of capacitance retention of 95% after 3000 cycles.

Electrode-Induced Self-Healed Monolayer MoS2 for High Performance Transistors and Phototransistors.

Contact engineering for monolayered transition metal dichalcogenides (TMDCs) is considered to be of fundamental challenge for realizing high-performance TMDCs-based (opto) electronic devices. Here, an innovative concept is established for a device configuration with metallic copper monosulfide (CuS) electrodes that induces sulfur vacancy healing in the monolayer molybdenum disulfide (MoS2 ) channel. Excess sulfur adatoms from the metallic CuS electrodes are donated to heal sulfur vacancy defects in MoS2 that surprisingly improve the overall performance of its devices. The electrode-induced self-healing mechanism is demonstrated and analyzed systematically using various spectroscopic analyses, density functional theory (DFT) calculations, and electrical measurements. Without any passivation layers, the self-healed MoS2 (photo)transistor with the CuS contact electrodes show outstanding room temperature field effect mobility of 97.6 cm2 (Vs)-1 , On/Off ratio > 108 , low subthreshold swing of 120 mV per decade, high photoresponsivity of 1 × 104  A W-1 , and detectivity of 1013 jones, which are the best among back-gated transistors that employ 1L MoS2 . Using ultrathin and flexible 2D CuS and MoS2 , mechanically flexible photosensor is also demonstrated, which shows excellent durability under mechanical strain. These findings demonstrate a promising strategy in TMDCs or other 2D material for the development of high performance and functional devices including self-healable sulfide electrodes.

Direct Pattern Growth of Carbon Nanomaterials by Laser Scribing on Spin-Coated Cu-PI Composite Films and Their Gas Sensor Application.

The excellent physical and chemical properties of carbon nanomaterials render them suitable for application in gas sensors. However, the synthesis of carbon nanomaterials using high-temperature furnaces is time consuming and expensive. In this study, we synthesize a carbon nanomaterial using local laser-scribing on a substrate coated with a Cu-embedded polyimide (PI) thin film to reduce the processing time and cost. Spin coating using a Cu-embedded PI solution is performed to deposit a Cu-embedded PI thin film (Cu@PI) on a quartz substrate, followed by the application of a pulsed laser for carbonization. In contrast to a pristine PI solution-based PI thin film, the laser absorption of the Cu-embedded PI thin film based on Cu@PI improved. The laser-scribed carbon nanomaterial synthesized using Cu@PI exhibits a three-dimensional structure that facilitates gas molecule absorption, and when it is exposed to NO2 and NH3, its electrical resistance changes by -0.79% and +0.33%, respectively.

Fabrication of Carbon Nanomaterials Using Laser Scribing on Copper Nanoparticles-Embedded Polyacrylonitrile Films and Their Application in a Gas Sensor.

Carbon nanomaterials have attracted significant research attention as core materials in various industrial sectors owing to their excellent physicochemical properties. However, because the preparation of carbon materials is generally accompanied by high-temperature heat treatment, it has disadvantages in terms of cost and process. In this study, highly sensitive carbon nanomaterials were synthesized using a local laser scribing method from a copper-embedded polyacrylonitrile (CuPAN) composite film with a short processing time and low cost. The spin-coated CuPAN was converted into a carbonization precursor through stabilization and then patterned into a carbon nanomaterial of the desired shape using a pulsed laser. In particular, the stabilization process was essential in laser-induced carbonization, and the addition of copper promoted this effect as a catalyst. The synthesized material had a porous 3D structure that was easy to detect gas, and the resistance responses were detected as -2.41 and +0.97% by exposure to NO2 and NH3, respectively. In addition, the fabricated gas sensor consists of carbon materials and quartz with excellent thermal stability; therefore, it is expected to operate as a gas sensor even in extreme environments.

Room Temperature Wafer-Scale Synthesis of Highly Transparent, Conductive CuS Nanosheet Films via a Simple Sulfur Adsorption-Corrosion Method.

The development of highly conductive electrodes with robust mechanical durability and clear transmittance in the visible to IR spectral range is of great importance for future wearable/flexible electronic applications. In particular, low resistivity, robust flexibility, and wide spectral transparency have a significant impact on optoelectronic performance. Herein, we introduce a new class of covellite copper monosulfide (CuS) nanosheet films as a promising candidate for soft transparent conductive electrodes (TCEs). An atmospheric sulfur adsorption-corrosion phenomenon represents a key approach in our work for the achievement of wafer-scale CuS nanosheet films through systematic control of the neat Cu layer thickness ranging from 2 to 10 nm multilayers at room temperature. These nanosheet films provide outstanding conductivity (∼25 Ω sq-1) and high transparency (> 80%) in the visible to infrared region as well as distinct flexibility and long stability under air exposure, yielding a high figure-of-merit (∼60) that is comparable to that of conventional rigid metal oxide material-based TCEs. Our unique room temperature synthesis process delivers high quality CuS nanosheets on any arbitrary substrates in a short time (< 1 min) scale, thus guaranteeing the widespread use of highly producible and scalable device fabrication.

Phase Transition-Induced Temperature-Dependent Phonon Shifts in Molybdenum Disulfide Monolayers Interfaced with a Vanadium Dioxide Film.

We report the optical phonon shifts induced by phase transition effects of vanadium dioxide (VO2) in monolayer molybdenum disulfide (MoS2) when interfacing with a VO2 film showing a metal-insulator transition coupled with structural phase transition (SPT). To this end, the monolayer MoS2 directly synthesized on a SiO2/Si substrate by chemical vapor deposition was first transferred onto a VO2/c-Al2O3 substrate in which the VO2 film was prepared by a sputtering method. We compared the MoS2 interfaced with the VO2 film with the as-synthesized MoS2 by using Raman spectroscopy. The temperature-dependent Raman scattering characteristics exhibited the distinct phonon behaviors of the E2g1 and A1g modes in the monolayer MoS2. Specifically, for the as-synthesized MoS2, there were no Raman shifts for each mode, but the enhancement in the Raman intensities of E2g1 and A1g modes was clearly observed with increasing temperature, which could be interpreted by the significant contribution of the interface optical interference effect. In contrast, the red-shifts of both the E2g1 and A1g modes for the MoS2 transferred onto VO2 were clearly observed across the phase transition of VO2, which could be explained in terms of the in-plane tensile strain effect induced by the SPT and the enhancement of electron-phonon interactions due to an increased electron density at the MoS2/VO2 interface through the electronic phase transition. This study provides further insights into the influence of interfacial hybridization for the heterogeneous integration of 2D transition-metal dichalcogenides and strongly correlated materials.

Electrochemically active hydroquinone-based redox mediator for flexible energy storage system with improved charge storing ability.

Electrochemically active redox mediators have been widely investigated in energy conversion/storage system to improve overall catalytic activities and energy storing ability by inducing favorable surface redox reactions. However, the enhancement of electrochemical activity from the utilization of redox mediators (RMs) is only confirmed through theoretical computation and laboratory-scale experiment. The use of RMs for practical, wearable, and flexible applications has been scarcely researched. Herein, for the first time, a wearable fiber-based flexible energy storage system (f-FESS) with hydroquinone (HQ) composites as a catalytically active RM is introduced to demonstrate its energy-storing roles. The as-prepared f-FESS-HQ shows the superior electrochemical performance, such as the improved energy storage ability (211.16 F L-1 and 29.3 mWh L-1) and long-term cyclability with a capacitance retention of 95.1% over 5000 cycles. Furthermore, the f-FESS-HQ can well maintain its original electrochemical properties under harsh mechanical stress (bending, knotting, and weaving conditions) as well as humid conditions in water and detergent solutions. Thus, the strategical use of electrochemically active RMs can provide the advanced solution for future wearable energy storage system.

Phase-dependent gas sensitivity of MoS2 chemical sensors investigated with phase-locked MoS2.

In the present study, phase-dependent gas sensitivities of MoS2 chemical sensors were examined. While 1T-phase MoS2 (1T-MoS2) has shown better chemical sensitivity than has 2H-phase MoS2 (2H-MoS2), the instability of the 1T phase has been hindering applications of 1T-MoS2 as chemical sensors. Here, the chemical sensitivity of MoS2 locked in its 1T phase by using a ZnO phase lock was investigated. To develop MoS2 chemical sensors locked in the 1T phase, we synthesized a multi-dimensional nanomaterial by growing ZnO nanorods onto MoS2 nanosheets (ZnO@1T-MoS2). Raman spectroscopy and x-ray photoelectron spectroscopy analyses of such phase-locked 1T-MoS2 subjected to flash light irradiation 100 times confirmed its robustness. ZnO nanomaterials hybridized on MoS2 nanosheets not only froze the MoS2 at its 1T phase, but also increased the active surface area for chemical sensing. The resulting hybridized material showed better response, namely better sensitivity, to NO2 gas exposure at room temperature than did 1T-MoS2 and 2H-MoS2. This result indicated that increased surface area and heterojunction formation between MoS2 and ZnO constitute a more promising route for improving sensitivity than using the 1T phase itself.

Direct Epitaxial Synthesis of Selective Two-Dimensional Lateral Heterostructures.

Two-dimensional (2D) heterostructured or alloyed monolayers composed of transition metal dichalcogenides (TMDCs) have recently emerged as promising materials with great potential for atomically thin electronic applications. However, fabrication of such artificial TMDC heterostructures with a sharp interface and a large crystal size still remains a challenge because of the difficulty in controlling various growth parameters simultaneously during the growth process. Here, a facile synthetic protocol designed for the production of the lateral TMDC heterostructured and alloyed monolayers is presented. A chemical vapor deposition approach combined with solution-processed precursor deposition makes it possible to accurately control the sequential introduction time and the supersaturation levels of the vaporized precursors and thus reliably and exclusively produces selective and heterogeneous epitaxial growth of TMDC monolayer crystals. In addition, TMDC core/shell heterostructured (MoS2/alloy, alloy/WS2) or alloyed (Mo1-xWxS2) monolayers are also easily obtained with precisely controlled growth parameters, such as sulfur introduction timing and growth temperature. These results represent a significant step toward the development of various 2D materials with interesting properties.

Surface functionalization-induced photoresponse characteristics of monolayer MoS2 for fast flexible photodetectors.

Monolayered, semiconducting molybdenum disulfide (MoS2) is of considerable interest for its potential applications in next-generation flexible, wearable, and transparent photodetectors because it has outstanding physical properties coupled with unique atomically thin dimensions. However, there is still a lack of understanding in terms of the underlying mechanisms responsible for the photoresponse dynamics, which makes it difficult to identify the appropriate device design strategy for achieving a fast photoresponse time in MoS2 photodetectors. In this study, we investigate the importance of surface functionalization on controlling the charge carrier densities in a MoS2 monolayer and in turn the corresponding behavior of the photoresponse in relation to the position of the Fermi-level and the energy band structure. We find that the p-doping and n-doping, which is achieved through the surface functionalization of the MoS2 monolayer, leads to devices with different photoresponse behavior. Specifically, the MoS2 devices with surface functional groups contributing to p-doping exhibited a faster response time as well as higher sensitivity compared to that observed for the MoS2 devices with surface functional groups contributing to n-doping. We attribute this difference to the degree of bending in the energy bands at the metal-semiconductor junction as a result of shifting in the Fermi-level position, which influences the optoelectronic transport properties as well as the recombination dynamics leading to a low dark and thus high detectivity and fast decay time. Based upon these findings, we have also demonstrated the broad applicability of surface functionalization by fabricating a flexible MoS2 photodetector that shows an outstanding decay time of 0.7 s, which is the fastest response time observed in flexible MoS2 detectors ever reported.

Author Correction: Planar and van der Waals heterostructures for vertical tunnelling single electron transistors.

The original version of this Article contained an error in the spelling of the author Matthew Holwill, which was incorrectly given as Mathew Holwill. This has now been corrected in both the PDF and HTML versions of the Article.