RESUMEN
In recent years, considerable attention has focused on high-performance and flexible crystalline metal oxide thin-film transistors (TFTs). However, achieving both high performance and flexibility in semiconductor devices is challenging due to the inherently conductive and brittle nature of crystalline metal oxide. In this study, we propose a facile way to overcome this limitation by employing a junctionless (JL) TFT structure via oxygen plasma treatment of the crystalline indium-tin oxide (ITO) films. The oxygen plasma treatment significantly reduced oxygen vacancies in the ITO films, contributing to the significant reduction in the carrier concentration from 4.67 × 1020 to 1.39 × 1016. Importantly, this reduction was achieved without inducing any noticeable structural changes in the ITO, enabling the successful realization of ITO JL TFTs with an adjustable threshold voltage. Furthermore, the ITO JL TFTs demonstrate good stability and reliability under various bias stress conditions, aging in the air atmosphere, and high-temperature processes. In addition, the ITO JL TFTs exhibit low light sensitivity due to the wide bandgap of ITO and further suppression of Vo defects, making them suitable for applications requiring stable performance under light exposure. To compare and analyze the flexibility of the JL structure and conventional structure with additional source/drain (S/D) junction in ITO TFTs with nonencapsulation, we utilized mechanical simulations and transmission line method (TLM). By employing the JL structure in ITO TFT through carefully optimized oxygen plasma treatment, we successfully mitigated stress concentration at the S/D-channel interface. This resulted in a JL ITO TFT that exhibited a change in contact resistance of less than 20% even after 20,000 bending cycles. Consequently, a stable and flexible ITO TFT with field-effect mobility (µFE) of 12.74 cm2/(V s) was realized, outperforming conventionally structured ITO TFTs with additional S/D junction, where the contact resistance nearly tripled.
RESUMEN
Low-temperature solution-processed oxide semiconductor and dielectric films typically possess a substantial number of defects and impurities due to incomplete metal-oxygen bond formation, causing poor electrical performance and stability. Here, we exploit a facile route to improve the film quality and the interfacial property of low-temperature solution-processed oxide thin films via elemental diffusion between metallic ion-doped InOx (M:InOx) ternary oxide semiconductor and AlOx gate dielectric layers. Particularly, it was revealed that metallic dopants such as magnesium (Mg) and hafnium (Hf) having a small ionic radius, a high Gibbs energy of oxidation, and bonding dissociation energy could successfully diffuse into the low-quality AlOx gate dielectric layer and effectively reduce the structural defects and residual impurities present in the bulk and at the semiconductor/dielectric interface. Through an extensive investigation on the compositional, structural, and electrical properties of M:InOx/AlOx thin-film transistors (TFTs), we provide direct evidences of elemental diffusion occurred between M:InOx and AlOx layers as well as its contribution to the electrical performance and operational stability. Using the elemental diffusion process, we demonstrate solution-processed Hf:InOx TFTs using a low-temperature (180 °C) AlOx gate dielectric having a field-effect mobility of 2.83 cm2 V-1·s-1 and improved bias stability. Based on these results, it is concluded that the elemental diffusion between oxide semiconductor and gate dielectric layers can play a crucial role in realizing oxide TFTs with enhanced structural and interfacial integrity.
RESUMEN
As an alternative strategy for conventional high-temperature crystallization of metal oxide (MO) channel layers, the catalytic metal-accelerated crystallization (CMAC) process using a metal seed layer is demonstrated for low-temperature crystallization of solution-processed MO semiconductors. In the CMAC process, the catalytic metal layer plays the role of seed sites for initiating and accelerating the crystallization of amorphous MO films. Generally, the solution-processed crystalline-TiO2 (c-TiO2) films required high-temperature crystallization conditions (≥500-600 °C), showing low electrical performance with a high defect density. In contrast, the suggested CMAC process could effectively lower crystallization temperature of the a-TiO2 films, enabling high-quality c-TiO2 films with well-aligned anatase grains and low-defect density. The various crystalline catalytic layers were deposited over the earth-abundant n-type amorphous titanium oxide (a-TiO2) films. Also, then, the CMAC process was performed for facile low-temperature translation of solution-processed a-TiO2 to a highly crystallized state. In particular, the Al-CMAC process using the crystalline thin-aluminum (Al) catalytic metal seed layer facilitates low-temperature (≥300 °C) crystallization of the solution-processed a-TiO2 films and the fabrication of high-performance solution-processed c-TiO2 thin-film transistors with superior field-effect mobility, good on/off switching behavior, and improved operational stability.
RESUMEN
The oxygen vacancies in the TiOx active layer play the key role in determining the electrical characteristics of TiOx-based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiOx active layers on the resistive-switching characteristics of memristor devices. In particular, the stacking sequence of the multi-layer TiOx sub-layers, which have different oxygen contents, was varied. The optimal stacking sequence condition was confirmed by measuring the current-voltage characteristics, and also the retention test confirmed that the characteristics were maintained for more than 10,000 s. Finally, the simulation using the Modified National Institute of Standards and Technology handwriting recognition data set revealed that the multi-layer TiOx memristors showed a learning accuracy of 89.18%, demonstrating the practical utilization of the multi-layer TiOx memristors in artificial intelligence systems.
RESUMEN
The fabrication of high-performance metal oxide thin-film transistors (TFTs) using a low-temperature solution process may facilitate the realization of ultraflexible and wearable electronic devices. However, the development of highly stable oxide gate dielectrics at a low temperature has been a challenging issue since a considerable amount of residual impurities and defective bonding states is present in low-temperature-processed gate dielectrics causing a large counterclockwise hysteresis and a significant instability. Here, we report a new approach to effectively remove the residual impurities and suppress the relevant dipole disorder in a low-temperature-processed (180 °C) AlOx gate dielectric layer by magnesium (Mg) doping. Mg is well known as a promising material for suppression of oxygen vacancy defects and improvement of operational stability due to a high oxygen vacancy formation energy (Evo = 9.8 eV) and a low standard reduction potential (E0 = -2.38 V). Therefore, with an adequate control of Mg concentration in metal oxide (MO) films, oxygen-related defects could be easily suppressed without additional treatments and then stable metal-oxygen-metal (M-O-M) network formation could be achieved, causing excellent operational stability. By optimal Mg doping (10%) in the InOx channel layer, Mg:InOx TFTs exhibited negligible clockwise hysteresis and a field-effect mobility of >4 cm2 V-1 s-1. Furthermore, the electric characteristics of the low-temperature-processed AlOx gate dielectric with high impurities were improved by Mg diffusion originating in Mg doping, resulting in stable threshold voltage shift in the bias stability test.
RESUMEN
A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin-indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO) and thick-ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off- and on-states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field-effect mobility >50 cm2 V-1 s-1 with an on/off current ratio of >108 and good operational stability (threshold voltage shift <1 V for a positive-gate-bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer-Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off-currents and high on-currents depending on the applied gate bias.
