RESUMEN
Exploration of pressure-resistant materials largely facilitates their operation under extreme conditions where a stable structure and properties are highly desirable. However, under extreme conditions, such as a high pressure over 30.0 GPa, fluorescence quenching generally occurs in most materials. Herein, pressure-induced emission enhancement (PIEE) by a factor of 4.2 is found in Ga2O3 nanocrystals (NCs), a fourth-generation ultrawide bandgap semiconductor. This is mainly attributed to pressure optimizing the intrinsic lattice defects of the Ga2O3 nanocrystals, which was further confirmed by first-principles calculations. Note that the bright blue emission could be stabilized even up to a high pressure of 30.6 GPa, which is of great significance in the essential components of white light. Notably, after releasing the pressure to ambient conditions, the emission of the Ga2O3 nanocrystals can completely recover, even after undergoing multiple repeated pressurizations. In addition to stable optical properties, synchrotron radiation shows that the Ga2O3 nanocrystals remain in the cubic structure described by space group Fd3m upon compression, demonstrating the structural stability of the Ga2O3 nanocrystals under high pressure. This study pays the way for the application of oxide nanomaterials in pressure anti-counterfeiting and pressure information memory devices.
