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Vertical-cavity surface-emitting lasers (VCSELs) are widely used as light sources for high-speed communications. This is mainly due to their economical cost, high bandwidth, and scalability. However, efficient red VCSELs with emissions at 650â nm are required for plastic optical fiber (POF) technology because of the low-loss transmission window centered around this wavelength. This study investigates using 650-nm red VCSEL arrays in interconnected systems for POF communication to improve signal quality and increase data rates. The experimental results show that using one red VCSEL with a -3-dB bandwidth of 2â GHz in POF communication can achieve data rates of up to 4.7 Gb/s with 2 pJ/bit power efficiency using direct current-biased optical orthogonal frequency-division multiplexing (DCO-OFDM). The bit error ratio (BER) is 3.6×10-3, which is less than the hard-decision forward-error correction (FEC) limit of 3.8 × 10-3. In addition, temperature dependence measurements of the VCSEL have been presented from 15 ∘C to 38 ∘C. The essential parameters of VCSEL have also been measured: the maximum optical power is 2.5â mW, and the power conversion efficiency is 14%.
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The last decade has witnessed considerable progress in underwater wireless optical communication in complex environments, particularly in exploring the deep sea. However, it is difficult to maintain a precise point-to-point reception at all times due to severe turbulence in actual situations. To facilitate efficient data transmission, the color-conversion technique offers a paradigm shift in large-area and omnidirectional light detection, which can effectively alleviate the étendue limit by decoupling the field of view and optical gain. In this work, we investigated a series of difluoroboron ß-diketonate fluorophores by measuring their photophysical properties and optical wireless communication performances. The emission colors were tuned from blue to green, and >0.5 Gb/s data transmission was achieved with individual color channel in free space by implementing an orthogonal frequency-division multiplexing (OFDM) modulation scheme. In the underwater experiment, the fluorophore with the highest transmission speed was fabricated into a 4×4 cm2 luminescent concentrator, with the concentrated emission from the edges coupled with an optical fiber array, for large-area photodetection and optical beam tracking. The net data rates of 130 Mb/s and 217 Mb/s were achieved based on nonreturn- to-zero on-off keying and OFDM modulation schemes, respectively. Further, the same device was used to demonstrate the linear light beam tracking function with high accuracy, which is beneficial for sustaining a reliable and stable connection in a dynamic, turbulent underwater environment.
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Optical wireless communication (OWC) links suffer from strict requirements of pointing, acquisition, and tracking (PAT) between the transmitter and receiver. Extending the narrow field-of-view (FoV) of conventional light-focusing elements at the receiver side can relax the PAT requirements. Herein, we use all-inorganic CsPbBr3 nanocrystals (NCs) to extend various optical concentrators' FOV to 60°, regardless of the original FOV values of the concentrators. Given the robustness of UV light against communication channel misalignment, the used CsPbBr3 NCs provide another advantage of converting transmitted UVC light into a green color that matches the peak absorption of the widely available Si-based detectors. We evaluated the feasibility of the reported wide FoV optical detectors by including them in deep UV OWC systems, deploying non-return-to-zero on-off keying (NRZ-OOK) and orthogonal-frequency division multiplexing (OFDM) modulation schemes. The NRZ-OOK and OFDM schemes exhibit stable communication over the 60° FoV, providing data transmission rates of 100 Mb/s and 71.6 Mb/s, respectively, a unique capability to the reported design.
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Mixed-matrix membranes (MMMs) based on luminescent metal-organic frameworks (MOFs) and emissive polymers with the combination of their unique advantages have great potential in separation science, sensing, and light-harvesting applications. Here, we demonstrate MMMs for the field of high-speed visible-light communication (VLC) using a very efficient energy transfer strategy at the interface between a MOF and an emissive polymer. Our steady-state and ultrafast time-resolved experiments, supported by high-level density functional theory calculations, revealed that efficient and ultrafast energy transfer from the luminescent MOF to the luminescent polymer can be achieved. The resultant MMMs exhibited an excellent modulation bandwidth of around 80 MHz, which is higher than those of most well-established color-converting phosphors commonly used for optical wireless communication. Interestingly, we found that the efficient energy transfer further improved the light communication data rate from 132 Mb/s of the pure polymer to 215 Mb/s of MMMs. This finding not only showcases the promise of the MMMs for high-speed VLC but also highlights the importance of an efficient and ultrafast energy transfer strategy for the advancement of data rates of optical wireless communication.
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Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (â¼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 1018 cm-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 102% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.
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The use of optical carrier frequencies will enable seamless data connection for future terrestrial and underwater internet uses and will resolve the technological gap faced by other communication modalities. However, several issues must be solved to propel this technological shift, which include the limitations in designing optical receivers with large detection areas, omnidirectionality, and high modulation bandwidth, mimicking antennas operating in the radio-frequency spectrum. To address this technological gap, herein, we demonstrate halide-perovskite-polymer-based scintillating fibers as a near-omnidirectional detection platform for several tens-to-hundreds of Mbit/s optical communication in both free space and underwater links. The incorporation of all-inorganic CsPbBr3 nanocrystals by engineering the nanocrystal concentration in an ultraviolet-curable polymer matrix ensures a high photoluminescence quantum yield, Mega-Hertz modulation bandwidth and Mbit/s data rate suitable to be used as a high-speed fibers-based receiver. The resultant perovskite polymer-based scintillating fibers offer flexibility in terms of shape and near-omnidirectional detection features. Such fiber properties also introduce a scalable detection area which can resolve the resistance-capacitance and angle-of-acceptance limits in planar-based detectors, which conventionally impose a trade-off between the modulation bandwidth, detection area, and angle of view. A high bit rate of 23 Mbit/s and 152.5 Mbit/s was achieved using an intensity-modulated laser for non-return-to-zero on-off-keying (NRZ-OOK) modulation scheme in free-space and quadrature amplitude modulation orthogonal frequency-division multiplexing (QAM-OFDM) modulation scheme in an underwater environment, respectively. Our near-omnidirectional optical-based antenna based on perovskite-polymer-based scintillating fibers sheds light on the immense possibilities of incorporating functional nanomaterials for empowering light-based terrestrial- and underwater-internet systems.
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Neuromorphic vision sensors have been extremely beneficial in developing energy-efficient intelligent systems for robotics and privacy-preserving security applications. There is a dire need for devices to mimic the retina's photoreceptors that encode the light illumination into a sequence of spikes to develop such sensors. Herein, we develop a hybrid perovskite-based flexible photoreceptor whose capacitance changes proportionally to the light intensity mimicking the retina's rod cells, paving the way for developing an efficient artificial retina network. The proposed device constitutes a hybrid nanocomposite of perovskites (methyl-ammonium lead bromide) and the ferroelectric terpolymer (polyvinylidene fluoride trifluoroethylene-chlorofluoroethylene). A metal-insulator-metal type capacitor with the prepared composite exhibits the unique and photosensitive capacitive behavior at various light intensities in the visible light spectrum. The proposed photoreceptor mimics the spectral sensitivity curve of human photopic vision. The hybrid nanocomposite is stable in ambient air for 129 weeks, with no observable degradation of the composite due to the encapsulation of hybrid perovskites in the hydrophobic polymer. The functionality of the proposed photoreceptor to recognize handwritten digits (MNIST) dataset using an unsupervised trained spiking neural network with 72.05% recognition accuracy is demonstrated. This demonstration proves the potential of the proposed sensor for neuromorphic vision applications.
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Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area ß-Ga2O3 nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled ß-Ga2O3 direct-epitaxy on the EG. The ß-Ga2O3 layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.
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Recent advancements in gallium oxide (Ga2O3)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga2O3 layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline ß-Ga2O3 layer grown on an α-Al2O3 substrate through an interfacial γ-In2O3 layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In2O3 provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic ß-Ga2O3, cubic γ-In2O3, and trigonal α-Al2O3, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the ß-Ga2O3/γ-In2O3 interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline ß-Ga2O3/γ-In2O3/α-Al2O3 all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 104%, and a specific detectivity of 3.09 × 1012 Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.
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We demonstrated a high-speed 1×2 single-input and multiple-output (SIMO) diffuse-line-of-sight (diffuse-LOS) ultraviolet-C (UVC) solar-blind communication link over a distance of 5 meters. To approach the Shannon limit and improve the spectral efficiency, we implemented probabilistically shaped discrete multitone modulation. As compared to a single-input and single-output (SISO) counterpart, we observed significant improvement in the SIMO link in terms of the angle of view of the receiver and the immunity to emulated weather condition. A wide angle of view of ± 9° is achieved in the SIMO system, with up to a 1.09-Gbit/s achievable information rate (AIR) and a minimum value of 0.24 Gbit/s. Moreover, the bit error rate of the SIMO link in emulated foggy conditions is lowered significantly when compared to that of the SISO link. This work highlights the practicality of UVC communication over realistic distances and in turbulent environments to fill the research gap in high-speed, solar-blind communication.
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Enhancing robustness and energy efficiency is critical in visible light communication (VLC) to support large-scale data traffic and connectivity of smart devices in the era of fifth-generation networks. To this end, we demonstrate that amorphous silicon (a-Si) thin-film solar cells with a high light absorption coefficient are particularly useful for simultaneous robust signal detection and efficient energy harvesting under the condition of weak light in this study. Moreover, a first-generation prototype called AquaE-lite is developed that consists of an a-Si thin-film solar panel and receiver circuits, which can detect weak light as low as 1 µW/cm2. Using AquaE-lite and a white-light laser, orthogonal frequency-division multiplexing signals with data rates of 1 Mb/s and 908.2 kb/s are achieved over a 20-m long-distance air channel and 2.4-m turbid outdoor pool water, respectively, under the condition of strong background light. The reliable VLC system based on energy-efficient a-Si thin-film solar cells opens a new pathway for future satellite-air-ground-ocean optical wireless communication to realize connectivity among millions of Internet of Things devices.
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Underwater wireless optical communication (UWOC) can offer reliable and secure connectivity for enabling future internet-of-underwater-things (IoUT), owing to its unlicensed spectrum and high transmission speed. However, a critical bottleneck lies in the strict requirement of pointing, acquisition, and tracking (PAT), for effective recovery of modulated optical signals at the receiver end. A large-area, high bandwidth, and wide-angle-of-view photoreceiver is therefore crucial for establishing a high-speed yet reliable communication link under non-directional pointing in a turbulent underwater environment. In this work, we demonstrated a large-area, of up to a few tens of cm2, photoreceiver design based on ultraviolet(UV)-to-blue color-converting plastic scintillating fibers, and yet offering high 3-dB bandwidth of up to 86.13 MHz. Tapping on the large modulation bandwidth, we demonstrated a high data rate of 250 Mbps at bit-error ratio (BER) of 2.2 × 10-3 using non-return-to-zero on-off keying (NRZ-OOK) pseudorandom binary sequence (PRBS) 210-1 data stream, a 375-nm laser-based communication link over the 1.15-m water channel. This proof-of-concept demonstration opens the pathway for revolutionizing the photodetection scheme in UWOC, and for non-line-of-sight (NLOS) free-space optical communication.
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Optical wireless communication (OWC) using the ultra-broad spectrum of the visible-to-ultraviolet (UV) wavelength region remains a vital field of research for mitigating the saturated bandwidth of radio-frequency (RF) communication. However, the lack of an efficient UV photodetection methodology hinders the development of UV-based communication. The key technological impediment is related to the low UV-photon absorption in existing silicon photodetectors, which offer low-cost and mature platforms. To address this technology gap, we report a hybrid Si-based photodetection scheme by incorporating CsPbBr3 perovskite nanocrystals (NCs) with a high photoluminescence quantum yield (PLQY) and a fast photoluminescence (PL) decay time as a UV-to-visible colour-converting layer for high-speed solar-blind UV communication. The facile formation of drop-cast CsPbBr3 perovskite NCs leads to a high PLQY of up to ~73% and strong absorption in the UV region. With the addition of the NC layer, a nearly threefold improvement in the responsivity and an increase of ~25% in the external quantum efficiency (EQE) of the solar-blind region compared to a commercial silicon-based photodetector were observed. Moreover, time-resolved photoluminescence measurements demonstrated a decay time of 4.5 ns under a 372-nm UV excitation source, thus elucidating the potential of this layer as a fast colour-converting layer. A high data rate of up to 34 Mbps in solar-blind communication was achieved using the hybrid CsPbBr3-silicon photodetection scheme in conjunction with a 278-nm UVC light-emitting diode (LED). These findings demonstrate the feasibility of an integrated high-speed photoreceiver design of a composition-tuneable perovskite-based phosphor and a low-cost silicon-based photodetector for UV communication.
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We experimentally demonstrated high-speed diffuse line-of-sight optical wireless communication across a wavy water-air-interface. The testbed channel was evaluated, in terms of data rate, coverage and robustness to the dynamic wave movement, based on the performance of different modulation schemes, including non-return-to-zero on-off keying (NRZ-OOK) and quadrature amplitude modulation (QAM)-orthogonal frequency division multiplexing (OFDM). Under the emulated calm water condition, 8-QAM-OFDM offers a data rate of 111.4 Mbit/s at the aligned position, while only 55 Mbit/s is achieved using NRZ-OOK. On the other hand, effective communication can still be maintained at a high data rate of 11 Mbit/s when the photodetector is off aligned laterally by 5 cm based on NRZ-OOK modulation, leading to a coverage of ~79 cm2. By utilizing OFDM modulation scheme, a data rate of 30 Mbit/s can be achieved up to 2.5-cm misalignment, leading to a coverage of ~20 cm2. Furthermore, in the presence of strong waves (15-mm wave height, causing a scintillation index of 0.667), 4-QAM-OFDM modulation showed a better resilience to channel instability than NRZ-OOK modulation. Our studies pave the way for the eventual realization of communication across a challenging water-air interface without the need for an interface relay, which is much sought-after for implementing a robust and large-coverage underwater-to-terrestrial internet-of-things.
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In recent years, ß-Ga2O3/NiO heterojunction diodes have been studied, but reports in the literature lack an investigation of an epitaxial growth process of high-quality single-crystalline ß-Ga2O3/NiO thin films via electron microscopy analysis and the fabrication and characterization of an optoelectronic device based on the resulting heterojunction stack. This work investigates the thin-film growth of a heterostructure stack comprising n-type ß-Ga2O3 and p-type cubic NiO layers grown consecutively on c-plane sapphire using pulsed laser deposition, as well as the fabrication of solar-blind ultraviolet-C photodetectors based on the resulting p-n junction heterodiodes. Several characterization techniques were employed to investigate the heterostructure, including X-ray crystallography, ion beam analysis, and high-resolution electron microscopy imaging. X-ray diffraction analysis confirmed the single-crystalline nature of the grown monoclinic and cubic (2Ì 01) ß-Ga2O3 and (111) NiO films, respectively, whereas electron microscopy analysis confirmed the sharp layer transitions and high interface qualities in the NiO/ß-Ga2O3/sapphire double-heterostructure stack. The photodetectors exhibited a peak spectral responsivity of 415 mA/W at 7 V reverse-bias voltage for a 260 nm incident-light wavelength and 46.5 pW/µm2 illuminating power density. Furthermore, we also determined the band offset parameters at the thermodynamically stable heterointerface between NiO and ß-Ga2O3 using high-resolution X-ray photoelectron spectroscopy. The valence and conduction band offsets values were found to be 1.15 ± 0.10 and 0.19 ± 0.10 eV, respectively, with a type-I energy band alignment.
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Semiconductor quantum well structures have been critical to the development of modern photonics and solid-state optoelectronics. Quantum level tunable structures have introduced new transformative device applications and afforded a myriad of groundbreaking studies of fundamental quantum phenomena. However, noncolloidal, III-V compound quantum well structures are limited to traditional semiconductor materials fabricated by stringent epitaxial growth processes. This report introduces artificial multiple quantum wells (MQWs) built from CsPbBr3 perovskite materials using commonly available thermal evaporator systems. These perovskite-based MQWs are spatially aligned on a large-area substrate with multiple stacking and systematic control over well/barrier thicknesses, resulting in tunable optical properties and a carrier confinement effect. The fabricated CsPbBr3 artificial MQWs can be designed to display a variety of photoluminescence (PL) characteristics, such as a PL peak shift commensurate with the well/barrier thickness, multiwavelength emissions from asymmetric quantum wells, the quantum tunneling effect, and long-lived hot-carrier states. These new artificial MQWs pave the way toward widely available semiconductor heterostructures for light-conversion applications that are not restricted by periodicity or a narrow set of dimensions.
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We demonstrated a high-power (474 mW) blue superluminescent diode (SLD) on c-plane GaN-substrate for speckle-free solid-state lighting (SSL), and high-speed visible light communication (VLC) link. The device, emitting at 442 nm, showed a large spectral bandwidth of 6.5 nm at an optical power of 105 mW. By integrating a YAG-phosphor-plate to the SLD, a CRI of 85.1 and CCT of 3392 K were measured, thus suitable for solid-state lighting. The SLD shows a relatively large 3-dB modulation bandwidth of >400 MHz, while a record high data rate of 1.45 Gigabit-per-second (Gbps) link has been achieved below forward-error correction (FEC) limit under non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. Our results suggest that SLD is a promising alternative for simultaneous speckle-free white lighting and Gbps data communication dual functionalities.