RESUMEN
In this work, a simple electrochemical oxidation method has been used to prepare p-typeß-Ga2O3nanoparticles. This method overcomes the problem of doping high energy gap semiconductors to form p-type. The electron holes ofß-Ga2O3were caused by oxygen vacancy (Vo) and showed the shorter lattice constant and preferred orientation in XRD analysis. The peak area of oxygen vacancy also reflects a higher ratio than n-type Ga2O3in x-ray photoelectron spectroscopy (XPS). The adsorption of reducing gas (CO, CH4, and H2) enhanced the resistance of theß-Ga2O3confirming the p-type character of NPs. The DFT calculations showed that oxygen vacancy leads to higher energy of the Fermi level and is near the valence band. The binding energy of Ga2O3and after interaction with gas molecular was also calculated which is analogous to our experimental data.
