Translation and manipulation of silicon nanomembranes using holographic optical tweezers.

We demonstrate the use of holographic optical tweezers for trapping and manipulating silicon nanomembranes. These macroscopic free-standing sheets of single-crystalline silicon are attractive for use in next-generation flexible electronics. We achieve three-dimensional control by attaching a functionalized silica bead to the silicon surface, enabling non-contact trapping and manipulation of planar structures with high aspect ratios (high lateral size to thickness). Using as few as one trap and trapping powers as low as several hundred milliwatts, silicon nanomembranes can be rotated and translated in a solution over large distances.

Placement and orientation of individual DNA shapes on lithographically patterned surfaces.

Artificial DNA nanostructures show promise for the organization of functional materials to create nanoelectronic or nano-optical devices. DNA origami, in which a long single strand of DNA is folded into a shape using shorter 'staple strands', can display 6-nm-resolution patterns of binding sites, in principle allowing complex arrangements of carbon nanotubes, silicon nanowires, or quantum dots. However, DNA origami are synthesized in solution and uncontrolled deposition results in random arrangements; this makes it difficult to measure the properties of attached nanodevices or to integrate them with conventionally fabricated microcircuitry. Here we describe the use of electron-beam lithography and dry oxidative etching to create DNA origami-shaped binding sites on technologically useful materials, such as SiO(2) and diamond-like carbon. In buffer with approximately 100 mM MgCl(2), DNA origami bind with high selectivity and good orientation: 70-95% of sites have individual origami aligned with an angular dispersion (+/-1 s.d.) as low as +/-10 degrees (on diamond-like carbon) or +/-20 degrees (on SiO(2)).

The role of electrochemical reactions during electrophoretic particle deposition.

Platinum microelectrodes were fabricated on a sapphire substrate by lithographic patterning and used to manipulate 1.58 microm silica particles in the plane of the substrate. A digital video system captured the motion of particles far from the electrodes and their deposition onto the working electrode during application of a DC potential. The role of electrode reversibility was investigated by comparing as-deposited electrodes with electrodes modified by electrolytic plating of platinum. Particles were also observed adhering to the substrate before reaching the electrode. The zeta potential of the particles and substrate was measured. The differing surface chemistry of the two systems and a local reduction in pH due to the production of hydrogen ion at the anode can explain the adhesion phenomena. Force distance curves were recorded using a colloid probe atomic force microscopy technique to directly measure the interaction of the silica particles with the sapphire substrate. These data validated the observed adhesion at the electrode and provided further support for the temporal and spatial reduction in pH. The role of Faradaic processes and the diffusion of potential determining ions in electrophoretic deposition were also considered.

Zeta potential orientation dependence of sapphire substrates.

The zeta potential of planar sapphire substrates for three different crystallographic orientations was measured by a streaming potential technique in the presence of KCl and (CH3)4NCl electrolytes. The streaming potential was measured for large single crystalline C-plane (0001), A-plane (1120), and R-plane (1102) wafers over a full pH range at three or more ionic strengths ranging from 1 to 100 mM. The roughness of the epi-polished wafers was verified using atomic force microscopy to be on the order of atomic scale, and X-ray photoelectron spectroscopy (XPS) was used to ensure that the samples were free of silica and other contaminants. The results reveal a shift in the isoelectric point (iep) of the three samples by as much as two pH units, with the R-plane surface exhibiting the most acidic behavior and the C-plane samples having the highest iep. The iep at all ionic strengths was tightly centered around a single pH for each wafer. These values of iep are substantially different from the range of pH 8-10 consistently reported in the literature for alpha-Al2O3 particles. Particle zeta potential measurements were performed on a model powder using phase analysis light scattering, and the iep was confirmed to occur at pH 8. Modified Auger parameters (MAP) were calculated from XPS spectra of a monolayer of iridium metal deposited on the sapphire by electron beam deposition. A shift in MAP consistent with the observed differences in iep of the surfaces confirms the effect of surface structure on the transfer of charge between the Ir and sapphire, hence accounting for the changes in acidity as a function of crystallographic orientation.