The importance of the interface for picosecond spin pumping in antiferromagnet-heavy metal heterostructures.

Interfaces in heavy metal (HM) - antiferromagnetic insulator (AFI) heterostructures have recently become highly investigated and debated systems in the effort to create spintronic devices that function at terahertz frequencies. Such heterostructures have great technological potential because AFIs can generate sub-picosecond spin currents which the HMs can convert into charge signals. In this work we demonstrate an optically induced picosecond spin transfer at the interface between AFIs and Pt using time-domain THz emission spectroscopy. We select two antiferromagnets in the same family of fluoride cubic perovskites, KCoF3 and KNiF3, whose magnon frequencies at the centre of the Brillouin zone differ by an order of magnitude. By studying their behaviour with temperature, we correlate changes in the spin transfer efficiency across the interface to the opening of a gap in the magnon density of states below the Néel temperature. Our observations are reproduced in a model based on the spin exchange between the localized electrons in the antiferromagnet and the free electrons in Pt. Through this comparative study of selected materials, we are able to shine light on the microscopy of spin transfer at picosecond timescales between antiferromagnets and heavy metals and identify a key figure of merit for its efficiency: the magnon gap. Our results are important for progressing in the fundamental understanding of the highly discussed physics of the HM/AFI interfaces, which is the necessary cornerstone for the designing of femtosecond antiferromagnetic spintronics devices with optimized characteristics.

Multiple electrical breakdowns and electrical annealing using high current approximating breakdown current of silver nanowire network.

The failure of a silver nanowire (AgNW) random network due to high electric current density is described. The AgNW network breaks down as result of electromigration and Joule heating at junctions, which leads to destroyed interconnections between AgNWs. The AgNW network is not completely destroyed after breakdown, but instead is able to undergo multiple breakdowns after being cooled down, with increased resistance and reduced breakdown current density. The breakdown current density of AgNW network is J(max) = 25 A cm(-2) for a network with R(s) ~ 40 Ω sq(-1) outperforming a CuNW network. An effective electrical annealing method is demonstrated to decrease network resistance by 18% by periodically applying high current that is slightly lower than breakdown current with a period of 1 min for a few cycles.