Soft tissue outcomes following alveolar ridge preservation with/without primary flap closure for periodontally damaged extraction socket: A randomized clinical trial.

INTRODUCTION: The changes in soft tissue profile following alveolar ridge preservation (ARP) with/without primary flap closure (PC) in periodontally damaged sockets have yet to be discovered. METHODS: For periodontally damaged non-molar extraction sockets, ARP with PC (group PC)/without PC (group SC) was performed using granule-type xenogeneic bone substitute material and a collagen barrier. Intraoral scans were performed at the time of ARP and 4 months thereafter. Superimposition of STL files was performed to examine tissue change on the soft tissue level. The level of mucogingival junction (MGJ) was also evaluated. RESULTS: A total of 28 patient (13 in group PC, 15 in group SC) completed the study. Soft tissue profile change was evaluated only when the measurement level was located on the non-mobile tissue. Group PC tended to shrink less on the long axis of the extraction socket than group SC (-4.3 ± 3.1 mm vs. -5.9 ± 4.4 mm at the 1 mm below the pre-extraction gingival margin, p > 0.05). Profilometric analysis (on the region of interest) also have a tendency of less tissue profile change in group PC than group SC (-1.0 ± 0.8 mm vs. -1.3 ± 0.5 mm, p > 0.05). The MGJ level change was not statistically significantly different between the groups (p > 0.05) even though the MGJ level was located more apically at 4 months in group SC compared with group PC. CONCLUSIONS: Alveolar ridge preservation with PC tended to yield less soft tissue shrinkage than ARP without PC.

Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel.

Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical and fundamental issues for Si-based technology. Here, we present the first junctionless electric-double-layer field-effect transistor with an electrostatically highly doped 5 nm thick MoS2 channel. A double-gated MoS2 transistor with an ionic-liquid top gate and a conventional bottom gate demonstrated good transfer characteristics with a 104 on-off current ratio, a 70 mV dec-1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottom-gate bias due to an electrostatically increased overall charge carrier concentration in the MoS2 channel. When a bottom-gate bias of 80 V was applied, a shoulder and two clear peak features were identified in the transconductance and its derivative, respectively; this outcome is typical of Si-based junctionless transistors. Furthermore, the decrease in electron mobility induced by a transverse electric field was reduced with increasing bottom-gate bias. Numerical simulations and analytical models were used to support these findings, which clarify the operation of junctionless MoS2 transistors with an electrostatically highly doped channel.

Primary flap closure in alveolar ridge preservation for periodontally damaged extraction socket: A randomized clinical trial.

INTRODUCTION: The effect of primary wound closure (PC) on alveolar ridge preservation (ARP) in periodontally damaged sockets has yet to be fully discovered. METHODS: Periodontally damaged sockets were allocated to one of the following groups: (1) ARP with PC (group PC), and (2) ARP without PC (group secondary wound closure [SC]). Following tooth extraction and flap elevation, granule-type xenogeneic bone substitute material and a collagen barrier were applied. Ridge change was evaluated using cone-beam computed tomographic (CBCT) scans immediately after ARP and at 4 months. Core biopsy specimens were examined histomorphometrically. RESULTS: A total of 28 patients were included in the analysis (13 in group PC, 15 in group SC). Histomorphometrically, the percentage of newly formed bone was 26.2 ± 17.7% and 24.6 ± 18.4% in groups PC and SC, respectively (independent t-test, degree of freedom [df] = 25, p > 0.05). Horizontal ridge changes on CBCT were -4.9 ± 3.1 mm and - 4.2 ± 2.5 mm in groups PC and SC at the 1 mm level below the ridge crest, respectively (independent t-test, df = 26, p > 0.05). Approximately half of the sites required additional bone augmentation at implant placement. CONCLUSIONS: ARP with/without PC yielded similar new bone formation and radiographic ridge change. This clinical trial was not registered prior to participant recruitment and randomization (https://cris.nih.go.kr/cris/search/detailSearch.do/19718).

Galvanic vestibular stimulation down-regulated NMDA receptors in vestibular nucleus of PD model.

Parkinsonian symptoms relief by electrical stimulation is constructed by modulating neural network activity, and Galvanic vestibular stimulation (GVS) is known to affect the neural activity for motor control by activating the vestibular afferents. However, its underlying mechanism is still elusive. Due to the tight link from the peripheral vestibular organ to vestibular nucleus (VN), the effect by GVS was investigated to understand the neural mechanism. Using Sprague Dawley (SD) rats, behavioral response, extracellular neural recording, and immunohistochemistry in VN were conducted before and after the construction of Parkinson's disease (PD) model. Animals' locomotion was tested using rota-rod, and single extracellular neuronal activity was recorded in VN. The immunohistochemistry detected AMPA and NMDA receptors in VN to assess the effects by different amounts of electrical charge (0.018, 0.09, and 0.18 coulombs) as well as normal and PD with no GVS. All PD models showed the motor impairment, and the loss of TH+ neurons in medial forebrain bundle (mfb) and striatum was observed. Sixty-five neuronal extracellular activities (32 canal & 33 otolith) were recorded, but no significant difference in the resting firing rates and the kinetic responding gain were found in the PD models. On the other hand, the numbers of AMPA and NMDA receptors increased after the construction of PD model, and the effect by GVS was significantly evident in the change of NMDA receptors (p < 0.018). In conclusion, the increased glutamate receptors in PD models were down-regulated by GVS, and the plastic modulation mainly occurred through NMDA receptor in VN.

Thermally driven phase transition of cobalt hydroxide sheets via cobalt oxides to cobalt nanoparticles.

Transition metal oxides, which include many stoichiometric variations, are formed into various crystal structures by the atomic arrangement of cations and anions according to stoichiometric composition and are used for a wide range of applications based on this. Among them, cobalt oxide, which has wide crystal structures depending on the lattice points of the anion and the valence of the Co cation, from its hydroxide formula, is attracting a lot of attention due to its interesting catalytic properties due to its crystal structure. In this study, using the synthesized Co(OH)2 nanosheets, the real-time behavior of the phase transition that occurs when continuous heat is applied to the sample has been systematically analyzed using an aberration-corrected scanning transmission electron microscope. The layered Co(OH)2 phase passes through hexagonal CoO and cubic CoO phases to finally become Co nanoparticles, but when the temperature is dropped in the hexagonal phase, spinel Co3O4 is formed. These results suggest that various phases included in transition metal oxides can be selectively implemented according to temperature range control.

Correction: Thermally driven phase transition of cobalt hydroxide sheets via cobalt oxides to cobalt nanoparticles.

Correction for 'Thermally driven phase transition of cobalt hydroxide sheets via cobalt oxides to cobalt nanoparticles' by Aram Yoon et al., Nanoscale Horiz., 2022, https://doi.org/10.1039/d2nh00218c.

In-situ formation of co particles encapsulated by graphene layers.

The process of encapsulating cobalt nanoparticles using a graphene layer is mainly direct pyrolysis. The encapsulation structure of hybrids prepared in this way improves the catalyst stability, which greatly reduces the leaching of non-metals and prevents metal nanoparticles from growing beyond a certain size. In this study, cobalt particles surrounded by graphene layers were formed by increasing the temperature in a transmission electron microscope, and they were analyzed using scanning transmission electron microscopy (STEM). Synthesized cobalt hydroxide nanosheets were used to obtain cobalt particles using an in-situ heating holder inside a TEM column. The cobalt nanoparticles are surrounded by layers of graphene, and the number of layers increases as the temperature increases. The interlayer spacing of the graphene layers was also investigated using atomic imaging. The success achieved in the encapsulation of metallic nanoparticles in graphene layers paves the way for the design of highly active and reusable heterogeneous catalysts for more challenging molecules.

Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing.

A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong stimulus for synaptic update because of their inefficient hot-carrier injection into the charge trapping layer, consequently causing a slow speed operation and large power consumption. Here, we propose a highly efficient charge trap synapse using III-V materials-based tunnel field-effect transistor (TFET). Our synaptic TFETs present superior subthreshold swing and improved charge trapping ability utilizing both carriers as charge trapping sources: hot holes created by impact ionization in the narrow bandgap InGaAs after being provided from the p+-source, and band-to-band tunneling hot electrons (BBHEs) generated at the abrupt p+n junctions in the TFETs. Thanks to these advances, our devices achieved outstanding efficiency in synaptic characteristics with a 5750 times faster synaptic update speed and 51 times lower sub-fJ/um2 energy consumption per single synaptic update in comparison to the MOSFET-based synapse. An artificial neural network (ANN) simulation also confirmed a high recognition accuracy of handwritten digits up to ∼90% in a multilayer perceptron neural network based on our synaptic devices.

Simulator acceleration and inverse design of fin field-effect transistors using machine learning.

The simulation and design of electronic devices such as transistors is vital for the semiconductor industry. Conventionally, a device is intuitively designed and simulated using model equations, which is a time-consuming and expensive process. However, recent machine learning approaches provide an unprecedented opportunity to improve these tasks by training the underlying relationships between the device design and the specifications derived from the extensively accumulated simulation data. This study implements various machine learning approaches for the simulation acceleration and inverse-design problems of fin field-effect transistors. In comparison to traditional simulators, the proposed neural network model demonstrated almost equivalent results (R2 = 0.99) and was more than 122,000 times faster in simulation. Moreover, the proposed inverse-design model successfully generated design parameters that satisfied the desired target specifications with high accuracies (R2 = 0.96). Overall, the results demonstrated that the proposed machine learning models aided in achieving efficient solutions for the simulation and design problems pertaining to electronic devices. Thus, the proposed approach can be further extended to more complex devices and other vital processes in the semiconductor industry.

Hypergravity-induced malfunction was moderated by the regulation of NMDA receptors in the vestibular nucleus.

Gravity alteration is one of the critical environmental factors in the space, causing various abnormal behaviors related with the malfunctioned vestibular system. Due to the high plastic responses in the central vestibular system, the behavioral failures were resolved in a short period of time (in approx. 72 h). However, the plastic neurotransmission underlying the functional recovery is still elusive. To understand the neurotransmitter-induced plasticity under hypergravity, the extracellular single neuronal recording and the immunohistochemistry were conducted in the vestibular nucleus (VN). The animals were grouped as control, 24-h, 72-h, and 15-day exposing to 4G-hypergravity, and each group had two subgroups based on the origins of neuronal responses, such as canal and otolith. The averaged firing rates in VN showed no significant difference in the subgroups (canal-related: p > 0.105, otolith-related: p > 0.138). Meanwhile, the number of NMDAr was significantly changed by the exposing duration to hypergravity. The NMDAr decreased in 24 h (p = 1.048 × 10-9), and it was retrieved in 72 h and 15 days (p < 4.245 × 10-5). Apparently, the reduction and the retrieval in the number of NMDAr were synchronized with the generation and recovery of the abnormal behaviors. Thus, the plasticity to resolve the hypergravity-induced malfunctional behaviors was conducted by regulating the number of NMDAr.

Neural Interruption by Unilateral Labyrinthectomy Biases the Directional Preference of Otolith-Related Vestibular Neurons.

BACKGROUND: The directional preference of otolith-related vestibular neurons elucidates the neuroanatomical link of labyrinths, but few direct experimental data have been provided. METHODS: The directional preference of otolith-related vestibular neurons was measured in the vestibular nucleus using chemically induced unilateral labyrinthectomy (UL). For the model evaluation, static and dynamic behavioral tests as well as a histological test were performed. Extracellular neural activity was recorded for the neuronal responses to the horizontal head rotation and the linear head translation. RESULTS: Seventy-seven neuronal activities were recorded, and the total population was divided into three groups: left UL (20), sham (35), and right UL (22). Based on directional preference, two sub-groups were again classified as contra- and ipsi-preferred neurons. There was no significance in the number of those sub-groups (contra-, 15/35, 43%; ipsi-, 20/35, 57%) in the sham (p = 0.155). However, more ipsi-preferred neurons (19/22, 86%) were observed after right UL (p = 6.056 × 10-5), while left UL caused more contra-preferred neurons (13/20, 65%) (p = 0.058). In particular, the convergent neurons mainly led this biased difference (ipsi-, 100% after right UL and contra-, 89% after left UL) (p < 0.002). CONCLUSIONS: The directional preference of the neurons depended on the side of the lesion, and its dominance was mainly led by the convergent neurons.

Restricted Channel Migration in 2D Multilayer ReS2.

When thickness-dependent carrier mobility is coupled with Thomas-Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrostatic bias conditions. However, various factors including (i) insufficient carrier density, (ii) atomically thin material thickness, and (iii) numerous oxide traps/defects considerably limit our deep understanding of the carrier transport mechanism in 2D multilayer materials. Herein, we report the restricted conducting channel migration in 2D multilayer ReS2 after a constant voltage stress of gate dielectrics is applied. At a given gate bias condition, a gradual increase in the drain bias enables a sensitive change in the interlayer resistance of ReS2, leading to a modification of the shape of the transconductance curves, and consequently, demonstrates the conducting channel migration along the thickness of ReS2 before the stress. Meanwhile, this distinct conduction feature disappears after stress, indicating the formation of additional oxide trap sites inside the gate dielectrics that degrade the carrier mobility and eventually restrict the channel migration. Our theoretical and experimental study based on the resistor network model and Thomas-Fermi charge screening theory provides further insights into the origins of channel migration and restriction in 2D multilayer devices.

Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection.

Hot carrier injection (HCI), occurring when the horizontal electric field is strongly applied, usually affects the degradation of nanoelectronic devices. In addition, metal contacts play a significant role in nanoelectronic devices. In this study, Schottky contacts in multilayer tungsten diselenide (WSe2) field-effect transistors (FETs) by hot carrier injection (HCI), occurring when a high drain voltage is applied, is investigated. A small number of hot carriers with high energy reduces the Schottky barrier height and improves the performance of FETs effectively rather than damaging the channel. Thermal annealing at the end of the fabrication process increases device performance by causing interfacial reactions of the source/drain electrodes. HCI causes a significant enhancement in the local asymmetry, especially in the subthreshold region. The subthreshold swing (SS) of the thermally annealed FETs is significantly improved from 9.66 to 0.562 V dec-1 through the energy of HCI generated by a strong horizontal electric field. In addition, the contact resistances (RSD), also called series resistances, extracted by a four-probe measurement and a Y-function method were also improved by decreasing to a 10th through the energy of HCI. To understand the asymmetrical characteristics of the channel after the stress, we performed electrical analysis, electrostatic force microscopy (EFM), and Raman spectroscopy.

Ultrasound-guided sialo-irrigation for the treatment of chronic sialodochitis with sialolithiasis.

Sialolithiasis is one of the most common causes of salivary duct obstruction. In the last 20 years, minimally invasive procedures like sialendoscopy, extracorporeal lithotripsy, and basket snaring are increasingly being used for the treatment of salivary gland duct stones. Sialo-irrigation of the salivary gland is an effective procedure for treating inflammation and providing symptomatic relief. This procedure can be employed for the treatment of sialolithiasis using the back pressure of instilled saline. Sialo-irrigation under ultrasound (US) guidance allows for dynamic studies showing real-time images during diagnostic or surgical procedure and can be used for the removal of sialoliths. In addition, it can also be used to remove primitive sialoliths and microliths by washing out the ductal system, which prevents the recurrence of sialoliths. The aim of this study was to propose a minimally invasive technique for sialolithiasis using US-guided sialo-irrigation.

Radiation dosimetry analyses of radiographic imaging systems used for orthodontic treatment: comparison among child, adolescent, and adult patients.

OBJECTIVES: The aim of this study was to compare the effective doses of orthodontic radiographs in children, adolescents, and adults. METHODS: We exposed a child, an adolescent (simulated by an adult female phantom), and adult male phantoms using common scanning protocols for panoramic radiography, cephalography, and cone-beam computed tomography (CBCT). Glass dosimeters were placed in the organs of the phantom to measure the absorbed doses. The effective doses were deduced using tissue weighting factors as defined in the ICRP Publication 103. RESULTS: For panoramic imaging, the parotid gland had the highest absorbed dose in the child and the submandibular glands had the highest absorbed dose in both the adolescent and adult phantoms. For cephalography, the organs and tissues located closest to the X-ray tube had the highest absorbed dose values. For CBCT, the lenses of the eyes received the highest absorbed dose. Effective doses with CBCT were the greatest in the adolescent phantom, followed by in the adult and child phantoms. CONCLUSIONS: Dental practitioners should be aware of patient age, as younger patients will incur greater risks from radiation.

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET.

Through time-dependent defect spectroscopy and low-frequency noise measurements, we investigate and characterize the differences of carrier trapping processes occurred by different interfaces (top/sidewall) of the gate-all-around silicon nanosheet field-effect transistor (GAA SiNS FET). In a GAA SiNS FET fabricated by the top-down process, the traps at the sidewall interface significantly affect the device performance as the width decreases. Compare to expectations, as the width of the device decreases, the subthreshold swing (SS) increases from 120 to 230 mV/dec, resulting in less gate controllability. In narrow-width devices, the effect of traps located at the sidewall interface is significantly dominant, and the 1/f 2 noise, also known as generation-recombination (G-R) noise, is clearly appeared with an increased time constant (τ i ). In addition, the probability density distributions for the normalized current fluctuations (ΔI D) show only one Gaussian in wide-width devices, whereas they are separated into four Gaussians with increased in narrow-width devices. Therefore, fitting is performed through the carrier number fluctuation-correlated with mobility fluctuations model that separately considered the effects of sidewall. In narrow-width GAA SiNS FETs, consequently, the extracted interface trap densities (N T ) distribution becomes more dominant, and the scattering parameter ([Formula: see text]) distribution increases by more than double.

Upregulation of TRESK Channels Contributes to Motor and Sensory Recovery after Spinal Cord Injury.

TWIK (tandem-pore domain weak inward rectifying K+)-related spinal cord K+ channel (TRESK), a member of the two-pore domain K+ channel family, is abundantly expressed in dorsal root ganglion (DRG) neurons. It is well documented that TRESK expression is changed in several models of peripheral nerve injury, resulting in a shift in sensory neuron excitability. However, the role of TRESK in the model of spinal cord injury (SCI) has not been fully understood. This study investigates the role of TRESK in a thoracic spinal cord contusion model, and in transgenic mice overexpressed with the TRESK gene (TGTRESK). Immunostaining analysis showed that TRESK was expressed in the dorsal and ventral neurons of the spinal cord. The TRESK expression was increased by SCI in both dorsal and ventral neurons. TRESK mRNA expression was upregulated in the spinal cord and DRG isolated from the ninth thoracic (T9) spinal cord contusion rats. The expression was significantly upregulated in the spinal cord below the injury site at acute time points (6, 24, and 48 h) after SCI (p < 0.05). In addition, TRESK expression was markedly increased in DRGs below and adjacent to the injury site. TRESK was expressed in inflammatory cells. In addition, the number and fluorescence intensity of TRESK-positive neurons increased in the dorsal and ventral horns of the spinal cord after SCI. TGTRESK SCI mice showed faster paralysis recovery and higher mechanical threshold compared to wild-type (WT)-SCI mice. TGTRESK mice showed lower TNF-α concentrations in the blood than WT mice. In addition, IL-1ß concentration and apoptotic signals in the caudal spinal cord and DRG were significantly decreased in TGTRESK SCI mice compared to WT-SCI mice (p < 0.05). These results indicate that TRESK upregulated following SCI contributes to the recovery of paralysis and mechanical pain threshold by suppressing the excitability of motor and sensory neurons and inflammatory and apoptotic processes.

Postural control in paw distance after labyrinthectomy-induced vestibular imbalance.

Balance control is accomplished by the anatomical link which provides the neural information for the coordination of skeletal muscles. However, there are few experimental proofs to directly show the neuroanatomical connection. Here, we examined the behavioral alterations by constructing an animal model with chemically induced unilateral labyrinthectomy (UL). In the experiment using rats (26 for UL, 14 for volume cavity, 355-498 g, male), the models were initially evaluated by the rota-rod (RR) test (21/26, 80.8%) and ocular displacement (23/26, 88.5%). The duration on the rolling rod decreased from 234.71 ± 64.25 s (4th trial before UL) to 11.81 ± 17.94 s (1st trial after UL). Also, the ocular skewed deviation (OSD) was observed in the model with left (5.79 ± 3.06°) and right lesion (3.74 ± 2.69°). Paw distance (PW) was separated as the front (FPW) and the hind side (HPW), and the relative changes of HPW (1.71 ± 1.20 cm) was larger than those of FPW (1.39 ± 1.06 cm), providing a statistical significance (p = 1.51 × 10-4, t test). Moreover, the results of the RR tests matched to those of the changing rates (18/21, 85.7%), and the changes (16/18, 88.9%) were dominantly observed in HPW (in FPW, 2/18, 11.1%). Current results indicated that the UL directly affected the changes in HPW more than those in FPW. In conclusion, the missing neural information from the peripheral vestibular system caused the abnormal posture in HPW, and the postural instability might reduce the performance during the voluntary movement shown in the RR test, identifying the relation between the walking imbalance and the unstable posture in PW. Graphical abstract.

Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire.

For use in flexible, printable, wearable electronics, Schottky-barrier field-effect transistors (SB-FETs) with various channel materials including low-dimensional nanomaterials have been considered so far due to their comparatively simple and cost-effective integration scheme free of junction and channel dopants. However, the electric conduction mechanism and the scaling properties underlying their performance differ significantly from those of conventional metal-oxide-semiconductor (MOS) field-effect transistors. Indeed, an understanding of channel length scaling and drain bias impact has not been elucidated sufficiently. Here, multiple ambipolar SB-FETs with different channel lengths have been fabricated on a single silicon nanowire ensuring a constant nanowire diameter. Their length scaling behavior is analyzed through drain current and transconductance contour maps, each depending on the drain and gate bias. The reduced gate control and extended drain field effect on Schottky junctions were observed in short channels. Activation energy measurements showed lower sensitive behavior of the Schottky barrier to gate bias in the short-channel device and confirmed the thinning of Schottky barrier width for electrons at the source interface with drain bias.

Understanding of the aging pattern in quantum dot light-emitting diodes using low-frequency noise.

The negative and positive aging effects of quantum dot (QD) light-emitting diodes (QLEDs) have received considerable attention in recent years and various analysis methods have been discussed. Here, we introduce a new approach to understand the aging effect of QLEDs, which is to diagnose the behavior of carriers and traps at interfaces between each layer of the QLEDs and inside the layers themselves. In particular, low-frequency noise (LFN) measurement and the analysis of current in the QLEDs were introduced to investigate the trapping/de-trapping behaviors of carriers in the defect states in the devices. A flicker noise was observed before the carriers are injected into the QD emitting layer, while the exciton generation-recombination (G-R) noise and shot noise were observed when the electrons were injected. A correlated noise, which is the correlated model of the trapping/de-trapping of the carriers near and/or inside the QDs and the exciton recombination, was also observed above the turn-on voltage. In addition, when the devices were aged with a constant current source, rapid increases in the luminance and external quantum efficiency (EQE) were observed for up to 50 h. After 100 h of the current aging, however, the devices were negatively aged with the reduced EQE. The LFN analysis results imply that the aging phenomena mainly depend on the trapping/de-trapping of carriers. In addition to the LFN analysis, we also investigated the current density-voltage-luminance and capacitance-voltage characteristics of the devices to clarify the aging behaviors in QLEDs.