RESUMEN
The Fabry-Pérot interferometer, a fundamental component in optoelectronic systems, offers interesting applications such as sensors, lasers, and filters. In this work, we show a tunable Fabry-Pérot cavity consisting of tunable Sagnac loop reflectors (SLRs) and phase shifters based on electrostatic microelectromechanical (MEMS) actuator. The fabrication process of the device is compatible with the standard wafer-level silicon photonics fabrication processes. This electrostatic actuation mechanism provides well-balanced, scalable pathways for efficient tuning methodologies. The extinction ratio of the continuously tunable SLRs' reflectivity is larger than 20 dB. Full 2π phase shifting is achieved, and response times of all the components are less than 25 µs. Both actuators have extremely low static power, measuring under 20 fW and the energy needed for tuning is both below 20 pJ.
RESUMEN
Considering the isotropic release process for nanoelectromechanical (NEM) devices, defining the specific sacrificial layer of the inter-metal-dielectric (IMD), i.e., the active region only for NEM devices, is one of the most important issue for complementary-metal-oxide-semiconductor-NEM (CMOS-NEM) co-integrated circuits. In this paper, novel fabrication method to define the active region of NEM devices is proposed by forming the trenched mesa-shape pattern in the IMD and depositing aluminum oxide (Al2O3) protecting layer. By applying the proposed process, the void space for mechanical operation of NEM devices can be formed user-controllably without the damage and collapse of CMOS part located below the NEM part. The feasibility of the proposed process is verified by fabricating and measuring the proof-of-concept prototype consists of the aluminum (Al) interconnects, silicon dioxide (SiO2) IMD and NEM memory switches.
