RESUMEN
InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 µs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.
RESUMEN
In recent years, micro-acoustic devices, such as surface acoustic wave (SAW) devices, and bulk acoustic wave (BAW) devices have been widely used in the areas of Internet of Things and mobile communication. With the increasing demand of information transmission speed, working frequencies of micro-acoustic devices are becoming much higher. To meet the emerging demand, Lamb wave devices with characteristics that are fit for high working frequency come into being. However, Lamb wave devices have more complicated vibrating modes than SAW and BAW devices. Methods used for SAW and BAW devices are no longer suitable for the mode extraction of Lamb wave devices. To solve this difficulty, this paper proposed a method based on machine learning with convolutional neural network to achieve automatic identification. The great ability to handle large amount of images makes it a good option for vibrating mode recognition and extraction. With a pre-trained model, we are able to identify and extract the first two anti-symmetric and symmetric modes of Lamb waves in varisized plate structures. After the successful use of this method in Lamb wave modes automatic extraction, it can be extended to all micro-acoustic devices and all other wave types. The proposed method will further promote the application of the Lamb wave devices.
RESUMEN
Phononic crystals with phononic band gaps varying in different parameters represent a promising structure for sensing. Equipping microchannel sensors with phononic crystals has also become a great area of interest in research. For building a microchannels system compatible with conventional micro-electro-mechanical system (MEMS) technology, SU-8 is an optimal choice, because it has been used in both fields for a long time. However, its mechanical properties are greatly affected by temperature, as this affects the phononic bands of the phononic crystal. With this in mind, the viscous dissipation in microchannels of flowing liquid is required for application. To solve the problem of viscous dissipation, this article proposes a simulation model that considers the heat transfer between fluid and microchannel and analyzes the frequency domain properties of phononic crystals. The results show that when the channel length reaches 1 mm, the frequency shift caused by viscous dissipation will significantly affect detecting accuracy. Furthermore, the temperature gradient also introduces some weak passbands into the band gap. This article proves that viscous dissipation does influence the band gap of phononic crystal chemical sensors and highlights the necessity of temperature compensation in calibration. This work may promote the application of microchannel chemical sensors in the future.
RESUMEN
As a promising renewable energy source, it is a challenging task to obtain blue energy, which is irregular and has an ultralow frequency, due to the limitation of technology. Herein, a nonresonant hybridized electromagnetic-triboelectric nanogenerator was presented to efficiently obtain the ultralow frequency energy. The instrument adopted the flexible pendulum structure with a precise design and combined the working principle of electromagnetism and triboelectricity to realize the all-directional vibration energy acquisition successfully. The results confirmed that the triboelectric nanogenerator (TENG) had the potential to deliver the maximum power point of about 470 µW while the electromagnetic nanogenerator (EMG) can provide 523 mW at most. The conversion efficiency of energy of the system reached 48.48%, which exhibited a remarkable improvement by about 2.96 times, due to the elastic buffering effect of the TENG with the double helix structure. Furthermore, its ability to collect low frequency wave energy was successfully proven by a buoy in Jialing River. This woke provides an effective candidate to harvest irregular and ultralow frequency blue energy on a large scale.
RESUMEN
The high-performance 395 nm GaN-based near-ultraviolet (UV) light emitting diodes (LEDs) on Si substrates have been obtained by designing an AlN buffer layer to decrease the dislocations density of the GaN layer. By adopting a multi-layer structure with a high- and low-V/III ratio alternation, a high-quality AlN buffer layer has been obtained with a small full-width at half-maximum (FWHM) for AlN(0002) X-ray rocking curve (XRC) of 648 arcsec and a small root-mean-square roughness of 0.11 nm. By applying the optimized AlN buffer layer, the high-quality GaN layer with GaN(0002) and GaN(10-12) XRC FWHM of 260 and 270 arcsec have been obtained, and the high-performance GaN-based near-UV LED wafers and chips have been fabricated accordingly. The as-fabricated near-UV LED chips exhibit a light output power of 550 mW with a forward voltage of 3.02 V at 350 mA, corresponding to a wall-plug efficiency of 52.0%. These chips with outstanding performance are of paramount importance in the application of curing, sterilization, efficient white lighting, etc.
RESUMEN
Integration of one-dimensional (1D) semiconductors with two-dimensional (2D) materials into hybrid systems is identified as promising applications for new optoelectronic and photodetection devices. Herein, a self-integrated hybrid ultraviolet (UV) photodetector based on InGaN nanorod arrays (NRAs) sandwiched between transparent top and back graphene contacts forming a Schottky junction has been demonstrated for the first time. The controlled van der Waals epitaxy of the vertically aligned InGaN NRA assembly on graphene-on-Si substrates is achieved by plasma-assisted molecular beam epitaxy. Moreover, the self-assembly formation mechanisms of InGaN NRAs on graphene are clarified by theoretical calculations with first-principles calculations based on density functional theory. The peculiar 1D/2D heterostructure hybrid system-based integrated UV photodetector simultaneously exhibits ultrafast response time (â¼50 µs) and superhigh photosensitivity (â¼105 A/W). It is highly believed that the concept proposed in this work has a great potential and can be widely applied for the next-generation integrated 1D/2D nano-based optoelectronic and photodetection devices.
