IR Hidden Patterns for Security Labels.

Authentication of a product's originality by anticounterfeiting labels represents a crucial point toward protection against forgery. Fast and scalable fabrication methods of original labels with a high degree of protection are in high demand for the protection of valuable goods. Here, we propose a simple strategy for fabrication of hidden security tags with IR luminescent readout by the direct femtosecond laser patterning of silicon-erbium-silicon sandwiched thin films. The choice of laser processing parameters makes possible the creation of random or quasi-regular self-organized surface nanotextures. The controlled laser-driven oxidation accompanying this process provides simultaneous regulation of the film's optical properties and spontaneous emission yield of the embedded Er atoms. The regimes are detected when optically similar patterned areas demonstrate different Er emission intensities, allowing us to create hidden security tags with facile readout at the C-band telecommunication wavelengths. The obtained results take another step toward the application of IR-luminescent erbium-based anticounterfeiting labels for covert and/or forensic security levels.

All-optical generation of static electric field in a single metal-semiconductor nanoantenna.

Electric field is a powerful instrument in nanoscale engineering, providing wide functionalities for control in various optical and solid-state nanodevices. The development of a single optically resonant nanostructure operating with a charge-induced electrical field is challenging, but it could be extremely useful for novel nanophotonic horizons. Here, we show a resonant metal-semiconductor nanostructure with a static electric field created at the interface between its components by charge carriers generated via femtosecond laser irradiation. We study this field experimentally, probing it by second-harmonic generation signal, which, in our system, is time-dependent and has a non-quadratic signal/excitation power dependence. The developed numerical models reveal the influence of the optically induced static electric field on the second harmonic generation signal. We also show how metal work function and silicon surface defect density for different charge carrier concentrations affect the formation of this field. We estimate the value of optically-generated static electric field in this nanoantenna to achieve ≈108V/m. These findings pave the way for the creation of nanoantenna-based optical memory, programmable logic and neuromorphic devices.

Femtosecond Laser-Assisted Formation of Hybrid Nanoparticles from Bi-Layer Gold-Silicon Films for Microscale White-Light Source.

It is very natural to use silicon as a primary material for microelectronics. However, silicon application in nanophotonics is limited due to the indirect gap of its energy band structure. To improve the silicon emission properties, it can be combined with a plasmonic part. The resulting metal-dielectric (hybrid) nanostructures have shown their excellence compared to simple metallic dielectric nanostructures. Still, in many cases, the fabrication of such structures is time consuming and quite difficult. Here, for the first time, we demonstrate a single-step and lithography-free laser-induced dewetting of bi-layer nanoscale-thickness gold-silicon films supported by a glass substrate to produce hybrid nanoparticles. For obtaining hybrid nanoparticles, we study nonlinear photoluminescence by mapping their optical response and morphology by scanning electron microscopy. This method can be used for the fabrication of arrays of hybrid nanoparticles providing white-light photoluminescence with a good control of their microscopic sizes and position. The developed approach can be useful for a wide range of photonic applications including the all-optical data processing and storage where miniaturization down to micro- and nanoscale together with an efficiency increase is of high demand.

Nanoscale Electrically Driven Light Source Based on Hybrid Semiconductor/Metal Nanoantenna.

A micro- or nanosized electrically controlled source of optical radiation is one of the key elements in optoelectronic systems. The phenomenon of light emission via inelastic tunneling (LEIT) of electrons through potential barriers or junctions opens up new possibilities for development of such sources. In this work, we present a simple approach for fabrication of nanoscale electrically driven light sources based on LEIT. We employ STM lithography to locally modify the surface of a Si/Au film stack via heating, which is enabled by a high-density tunnel current. Using the proposed technique, hybrid Si/Au nanoantennas with a minimum diameter of 60 nm were formed. Studying both electronic and optical properties of the obtained nanoantennas, we confirm that the resulting structures can efficiently emit photons in the visible range because of inelastic scattering of electrons. The proposed approach allows for fabrication of nanosized hybrid nanoantennas and studying their properties using STM.

All-Dielectric Nanostructures with a Thermoresponsible Dynamic Polymer Shell.

We suggest a new strategy for creating stimuli-responsive bio-integrated optical nanostructures based on Mie-resonant silicon nanoparticles covered by an ensemble of similarity negatively charged polyelectrolytes (heparin and sodium polystyrene sulfonate). The dynamic tuning of the nanostructures' optical response is due to light-induced heating of the nanoparticles and swelling of the polyelectrolyte shell. The resulting hydrophilic/hydrophobic transitions significantly change the shell thickness and reversible shift of the scattering spectra for individual nanoparticles up to 60 nm. Our findings bring novel opportunities for the application of smart nanomaterials in nanomedicine and bio-integrated nanophotonics.

Luminescent Erbium-Doped Silicon Thin Films for Advanced Anti-Counterfeit Labels.

The never-ending struggle against counterfeit demands the constant development of security labels and their fabrication methods. This study demonstrates a novel type of security label based on downconversion photoluminescence from erbium-doped silicon. For fabrication of these labels, a femtosecond laser is applied to selectively irradiate a double-layered Er/Si thin film, which is accomplished by Er incorporation into a silicon matrix and silicon-layer crystallization. The study of laser-induced heating demonstrates that it creates optically active erbium centers in silicon, providing stable and enhanced photoluminescence at 1530 nm. Such a technique is utilized to create two types of anti-counterfeiting labels. The first type is realized by the single-step direct laser writing of luminescent areas and detected by optical microscopy as holes in the film forming the desired image. The second type, with a higher degree of security, is realized by adding other fabrication steps, including the chemical etching of the Er layer and laser writing of additional non-luminescent holes over an initially recorded image. During laser excitation at 525 nm of luminescent holes of the labels, a photoluminescent picture repeating desired data can be seen. The proposed labels are easily scalable and perspective for labeling of goods, securities, and luxury items.

Light-Emitting Nanophotonic Designs Enabled by Ultrafast Laser Processing of Halide Perovskites.

Nanophotonics based on resonant nanostructures and metasurfaces made of halide perovskites have become a prospective direction for efficient light manipulation at the subwavelength scale in advanced photonic designs. One of the main challenges in this field is the lack of large-scale low-cost technique for subwavelength perovskite structures fabrication preserving highly efficient luminescence. Here, unique properties of halide perovskites addressed to their extremely low thermal conductivity (lower than that of silica glass) and high defect tolerance to apply projection femtosecond laser lithography for nanofabrication with precise spatial control in all three dimensions preserving the material luminescence efficiency are employed. Namely, with CH3 NH3 PbI3 perovskite highly ordered nanoholes and nanostripes of width as small as 250 nm, metasurfaces with periods less than 400 nm, and nanowire lasers as thin as 500 nm, corresponding to the state-of-the-art in multistage expensive lithographical methods are created. Remarkable performance of the developed approach allows to demonstrate a number of advanced optical applications, including morphology-controlled photoluminescence yield, structural coloring, optical- information encryption, and lasing.