Enhancing Thermoelectric Performance in P-Type Sb2Te3-Based Compounds Through Nb─Ag Co-Doping with Donor-Like Effect.

P-type Sb2Te3 has been recognized as a potential thermoelectric material for applications in low-medium temperature ranges. However, its inherent high carrier concentration and lattice thermal conductivity led to a relatively low ZT value, particularly around room temperature. This study addresses these limitations by leveraging high-energy ball milling and rapid hot-pressing techniques to substantially enhance the Seebeck coefficient and power factor of Sb2Te3, yielding a remarkable ZT value of 0.55 at 323 K due to the donor-like effect. Furthermore, the incorporation of Nb─Ag co-doping increases hole concentration, effectively suppressing intrinsic excitations ≈548 K while maintaining the favorable power factor. Simultaneously, the lattice thermal conductivity can be significantly reduced upon doping. As a result, the ZT values of Sb2Te3-based materials attain an impressive range of 0.5-0.6 at 323 K, representing an almost 100% improvement compared to previous research endeavors. Finally, the ZT value of Sb1.97Nb0.03Ag0.005Te3 escalates to 0.92 at 548 K with a record average ZT value (ZTavg) of 0.75 within the temperature range of 323-573 K. These achievements hold promising implications for advancing the viability of V-VI commercialized materials for low-medium temperature application.

Research Progress of Interfacial Design between Thermoelectric Materials and Electrode Materials.

Intensive efforts have been conducted to realize the reliable interfacial joining of thermoelectric materials and electrode materials with low interfacial contact resistance, which is an essential step to make thermoelectric materials into thermoelectric devices for industrial application. In this review, the roles of structural integrity, interdiffusion, and contact resistance in long-term reliabilities of thermoelectric modules are outlined first. Then interfacial reactions of near-room-temperature Bi2Te3-based thermoelectric materials and various electrode materials are reviewed comprehensively. We also summarized the joining behavior of the mid-temperature PbTe-based thermoelectric materials and commonly used electrode materials. Subsequently, for other thermoelectric materials systems, i.e., SiGe, CoSb3, and Mg3Sb2, previous attempts to join with some electrode materials are also recapitulated. Finally, some future prospects to further improve the joint reliability in thermoelectric device manufacturing are proposed. We believe that this review will provide guidance for preparing thermoelectric devices and optimizing thermoelectric device design.