Enhanced solar-driven photoelectrochemical water splitting using nanoflower Au/CuO/GaN hybrid photoanodes.

Harnessing solar energy for large-scale hydrogen fuel (H2) production shows promise in addressing the energy crisis and ecological degradation. This study focuses on the development of GaN-based photoelectrodes for efficient photoelectrochemical (PEC) water splitting, enabling environmentally friendly H2 production. Herein, a novel nanoflower Au/CuO/GaN hybrid structure was successfully synthesized using a combination of methods including successive ionic layer adsorption and reaction (SILAR), RF/DC sputtering, and metal-organic chemical vapour deposition (MOCVD) techniques. Structural, morphological, and optical characteristics and elemental composition of the prepared samples were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectroscopy, and energy-dispersive X-ray (EDX) spectroscopy, respectively. PEC and electrochemical impedance measurements were performed for all samples. The nanoflower Au/CuO/GaN hybrid structure exhibited the highest photocurrent density of ∼4 mA cm-2 at 1.5 V vs. RHE in a Na2SO4 electrolyte with recorded moles of H2 of about 3246 µmol h-1 cm-2. By combining these three materials in a unique structure, we achieved improved performance in the conversion of solar energy into chemical energy. The nanoflower structure provides a large surface area and promotes light absorption while the Au, CuO, and GaN components contribute to efficient charge separation and transfer. This study presents a promising strategy for advancing sustainable H2 production via efficient solar-driven water splitting.

Traumatic hematoma-based pseudoaneurysm of the superficial temporal artery in a 7-year-old boy: a case report.

The superficial temporal artery (STA), the terminal branch of the external carotid artery, is divided into the frontal (anterior) and parietal (posterior) branches. The frontal branch of the STA is located superficially on the anterior region of the scalp, making it especially susceptible to trauma. Here, we report a traumatic pseudoaneurysm of the STA in a 7-year-old boy who was injured in a minor car accident. A physical examination showed only a small bruise on the patient's forehead, and all vital signs were stable at the emergency room of our medical center. A facial computed tomography scan showed no significant findings. However, the boy later re-visited the hospital with slight swelling on the right forehead, and an ultrasonography scan revealed a hematoma near the right temporal artery. The resected hematoma (approximately 2 cm) was diagnosed as a traumatic pseudoaneurysm. Awareness of the possibility of a traumatic pseudoaneurysm in the STA may prevent a circumspect diagnosis in the future.

Cervical chondrocutaneous remnant: a case report.

Cervical chondrocutaneous branchial remnants are very rare congenital lesions of the lateral neck; thus, our knowledge of this condition derives almost entirely from occasional case reports in the literature. They are thought to originate from the branchial arches and, therefore, can be found anywhere on the pathway along which those branchial arches migrate during embryogenesis. We report the case of a 5-year-old girl presenting with a cervical chondrocutaneous branchial remnant on the right lateral neck that had existed since birth, with no other anomalies.

High Performance, Stable, and Flexible Piezoelectric Nanogenerator Based on GaN:Mg Nanowires Directly Grown on Tungsten Foil.

Rapid development of micro-electromechanical systems increases the need for flexible and durable piezoelectric nanogenerators (f-PNG) with high output power density. In this study, a high-performance, flexible, and highly stable f-PNG is prepared by directly growing the Mg-doped semi-insulating GaN nanowires (NWs) on a 30-µm-thick tungsten foil using vapor-liquid-solid growth mechanism. The direct growth of NWs on metal foil extends the overall lifetime of the f-PNG. The semi-insulating GaN NWs significantly enhance the piezoelectric performance of the f-PNG by reducing free electron density. Additionally, the direct integration of NWs on the tungsten foil improves the conductivity, resulting in current enhancement (2.5 mA) with an output power density of 13 mW cm-2 . The piezoelectric performance of the f-PNG is investigated under several bending angles, actuation frequencies, continuous vibrations, and airflow velocities. The maximum output voltage exhibited by the f-PNG is 20 V at a bending angle of 155°. The f-PNG is connected to the backside of an index finger to monitor finger bending behavior by changing the current density. Depending on its flexibility and sensitivity, the f-PNG can be used as a health-monitoring sensor to be mounted on joints (fingers, hands, elbows, and knees) to monitor their repeated bending and relaxation.

Unidirectional Elimination of Hydrogen by a Giant Local Field Saves First- and Last-Mile Performances of Semiconductor Devices.

Hydrogen, the smallest element, easily forms bonds to host/dopant atoms in semiconductors, which strongly passivates the original electronic characteristics and deteriorates the final reliability. Here, we demonstrate a concept of unidirectional elimination of hydrogen from semiconductor wafers as well as electronic chips through a giant local electric field induced by compact chloridions. We reveal an interactive behavior of chloridions, which can rapidly approach and take hydrogen atoms away from the device surface. A universal and simple technique based on a solution-mediated three-electrode system achieves efficient hydrogen elimination from various semiconductor wafers (p-GaN, p-AlGaN, SiC, and AlInP) and also complete light emitting diodes (LEDs). The p-type conductivity and light output efficiency of H-eliminated UVC LEDs have been significantly enhanced, and the lifetime is almost doubled. Moreover, we confirm that under a one-second irradiation of UVC LEDs, bacteria and COVID-19 coronavirus can be completely killed (>99.93%). This technology will accelerate the further development of the semiconductor-based electronic industry.

Optimized Aluminum Reflector for Enhancement of UVC Cathodoluminescence Based-AlGaN Materials with Carbon Nanotube Field Emitters.

The far ultraviolet C (UVC) light sources based on carbon nanotube (CNT) field emitters as excitation sources have become promising light sources for sterilization, disinfection, and water purification. However, the low light extraction efficiency of UVC-CNT light sources still hinders the practical application of these structures. Herein, we report an optimized aluminum (Al) reflector to enhance the light extraction efficiency of UVC-CNT light sources. Optical analysis of UVC-CNT light sources covered by the Al reflectors with various thicknesses ranging from 30 to 150 nm was performed to realize the optimized reflector. The UVC-CNT light sources exhibit the highest light extraction efficiency when the Al reflector layer has an optimized thickness of 100 nm. For comparison, the cathodoluminescence (CL) spectra were recorded for UVC-CNT light sources with and without the optimized Al reflector. The measured light output power and the estimated power efficiency of the UVC-CNT light-source-tube with Al reflector were enhanced by about 27 times over the reference. This enhancement is mainly attributed to the outstanding reflection effect of the Al reflector.

GaN Nanowire Growth Promoted by In-Ga-Au Alloy Catalyst with Emphasis on Agglomeration Temperature and In Composition.

The crystallographic orientation control of GaN nanowires (NWs) has been widely investigated by varying the V-III ratio. Here, we report the tuning of crystallographic orientation of GaN NWs by varying the composition of indium (In) in gallium-gold (Ga-Au) alloy catalyst using metal-organic chemical vapor deposition (MOCVD). The c-plane GaN thin film and sapphire substrate are used as growth templates. We found that the substrates of same orientation have a negligible influence on the orientation of the GaN NWs. The catalyst composition and the dimensions of alloy droplets determine the morphology of the NWs. The density of the NWs was controlled by tuning the droplet size of the alloy catalysts. With the constant V/III ratio, the crystallographic orientation of the GaN NWs was tuned from m- to c-axis by increasing the In composition inside alloy catalyst.

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate.

Beryllium oxide (BeO) belongs to a very unique material family that exhibits the divergent properties of high thermal conductivity and high electrical resistivity. BeO has the same crystal structure as GaN, and the absolute difference in the lattice constants is less than 17%. Here, the growth of GaN nanowires (NWs) on the polycrystalline BeO substrate is reported for the first time. The NWs are grown by a vapor-liquid-solid approach using a showerhead-based metal-organic chemical vapor deposition. The growth direction of NWs is along the m-axis on all planes of the substrate, and it is confirmed by transmission electron microscopy (TEM) and selected area electron diffraction (SAED) patterns. The vertical and tilted growth of NWs is due to the different planes of the substrate such as the m-plane, a-plane, and semipolar planes and is confirmed by X-ray diffraction. Subsequently, the GaN shell and InGaN/GaN multiple quantum wells (MQWs) are coaxially grown using a vapor-solid approach in the same reactor. A very high crystal quality is verified by TEM and SAED and is also confirmed by measuring the photoluminescence. The optical emission is tuned for the entire visible spectrum by increasing the indium incorporation in InGaN quantum wells. The conformal growth of InGaN/GaN MQW shells and the defect-free nature of the structure are confirmed from spatially resolved cathodoluminescence. This study will provide a platform for researchers to grow GaN NWs on the BeO substrate for a range of optical and electrical applications.

Enhanced stability of piezoelectric nanogenerator based on GaN/V2O5 core-shell nanowires with capacitive contact.

Enhanced stability of a piezoelectric nanogenerator (PNG) was demonstrated using c- and m-axis GaN/V2O5 core-shell nanowires (NWs) by analyzing the capacitive coupling of the PNG's output. The NW array grown on GaN thin film was embedded in polydimethylsiloxane (PDMS) matrix, following which the matrix was transferred to an indium (In)-coated PET substrate for achieving superior flexibility of the PNG. The stability of the PNG was enhanced by holding the NW PDMS composite with a PDMS polymer as a bonding material on the PET substrate. The inserted PDMS layer improved the lifetime of the PNG, however, because of the insulating nature of PDMS, the piezoelectric output of GaN NWs was coupled capacitively to In contact on PET substrate and it resulted in a slight degradation of piezoelectric output due to the voltage drop across the bottom capacitive contact. The maximum piezoelectric current was 64 nA and output voltage was 11.9 V from the PNG with c-axis NWs. While the PNG with direct bottom contact exhibited 57% output reduction after 72 000 operation cycles, the PNG with capacitive contact did not show any degradation in stability even after 150 000 cycles.

Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening.

A piezoelectric nanogenerator (PNG) that is based on c-axis GaN nanowires is fabricated on flexible substrate. In this regard, c-axis GaN nanowires were grown on GaN substrate using the vapor-liquid-solid (VLS) technique by metal organic chemical vapor deposition. Further, Polydimethylsiloxane (PDMS) was coated on nanowire-arrays then PDMS matrix embedded with GaN nanowire-arrays was transferred on Si-rubber substrate. The piezoelectric performance of nanowire-based flexible PNG was measured, while the device was actuated using a cyclic stretching-releasing agitation mechanism that was driven by a linear motor. The piezoelectric output was measured as a function of actuation frequency ranging from 1 Hz to 10 Hz and a linear tendency was observed for piezoelectric output current, while the output voltages remained constant. A maximum of piezoelectric open circuit voltages and short circuit current were measured 15.4 V and 85.6 nA, respectively. In order to evaluate the feasibility of our flexible PNG for real application, a long term stability test was performed for 20,000 cycles and the device performance was degraded by less than 18%. The underlying reason for the high piezoelectric output was attributed to the reduced free carriers inside nanowires due to surface Fermi-level pinning and insulating metal-dielectric-semiconductor interface, respectively; the former reduced the free carrier screening radially while latter reduced longitudinally. The flexibility and the high aspect ratio of GaN nanowire were the responsible factors for higher stability. Such higher piezoelectric output and the novel design make our device more promising for the diverse range of real applications.

Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.

The influence of temperature on the characteristics of a GaN-based 460-nm light-emitting diode (LED) prepared on sapphire substrate was simulated using the SiLENSe and SpeCLED software programs. High temperatures impose negative effects on the performance of GaN-based LEDs. As the temperature increases, electrons acquire higher thermal energies, and therefore LEDs may suffer more from high-current loss mechanisms, which in turn causes a reduction in the radiative recombination rate in the active region. The internal quantum efficiency was reduced by about 24% at a current density of 35 A/cm2, and the electroluminescence spectral peak wavelength was redshifted. The LED operated at 260 K and exhibited its highest light output power of ~317.5 mW at a maximum injection current of 350 mA, compared to 212.2 mW for an LED operated at 400 K. However, increasing temperature does not cause a droop in efficiency under high injection conditions. The peak efficiency at 1 mA of injection current decreases more rapidly by ~15% with increasing temperature from 260 to 400 K than the efficiency at high injection current of 350 mA by ~11%.

Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.

450 nm InGaN/GaN multi-quantum well (MQW) ligth-emitting diodes (LEDs) prepared on sapphire substrate with different thicknesses were fabricated and characterized. By thinning the sapphire substrate to 50 µm, it was found that the LED exhibited the highest light output power of ~48 mW under high injection current of 50 mA, improved by about 35% compared to that with 200 µm-thick sapphire without increasing the operating voltage. The electroluminescence intensity was increased and the spectral peak wavelength was blue-shifted, because the wafer bowing-induced mechanical stress alters the piezoelectric field in the InGaN/GaN MQW active region of the LED. The internal quantum efficiency was also improved by about 10% at an injection current of 50 mA. Moreover, the external quantum efficiency and light extraction efficiency were optimized because of enhanced light output intensity. The results confirmed that sapphire substrate thinning effectively alters the piezoelectric field in the InGaN/GaN active region, and hence increases both of the effective band gap and the probability of radiative recombination.

Fabrication of vertical light emitting diode based on thermal deformation of nanoporous GaN and removable mechanical supporter.

A GaN vertical light emitting diode (LED) based on the novel lift-off method was demonstrated by high temperature regrowth over nanoporous (NP) GaN template formed by electrochemical (EC) etching. A two-step EC etching process was employed on a SiO2 patterned GaN surface to fabricate a nanoporous template with a controlled porosity profile, which enabled better structural stability than a single NP GaN. During the regrowth of LED structures, the high porosity GaN layer produced large coalesced voids due to the thermal deformation of nanopores. LED layers were then separated from the sapphire substrate and transferred to a Mo substrate by the removal of the SiO2 mechanical supporters that held the LED structure to suppress cracks and damage during the process. The vertical LEDs fabricated using this technique showed improved optical power emission as well as low series resistance.

Nano-scale SiO2 patterned n-type GaN substrate for 380 nm ultra violet light emitting diodes.

380 nm Ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS). Wet etched self-assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano dots by inductively coupled plasma etching. In the pre-experiment, crystal quality and optical properties of n-GaN were greatly improved by applying PNS process. In this work, etch-pits density (EPD) method confirmed that PNS with SiO2 nano dots have superior crystalline properties. Thus Reference LED without PNS, 1-step PNS LEDs with SiO2 nano dots size were 200 nm, 250 nm, 300 nm and 300 nm 2-step PNS LED were fabricated. LEDs show almost the same operating voltage of about 3.4 V at an injection current of 50 mA. Light intensity was enhanced by ~2.1 times and 3.2 times for 300 nm 1-step and 300 nm 2-step PNS, respectively. FDTD simulation results show a similar tendency. As a result, PNS promotes epitaxial lateral overgrowth (ELOG) for defect reduction as well as act as a light scattering point.

Self assembled growth of GaSb nano triangles on GaN/sapphire substrate.

Self-assembled GaSb nano structures were grown on GaN/sapphire. GaSb nano triangles as well as quantum dots were obtained under controlled growth conditions. Nano triangles were grown at 580 degrees C due to the growth rate anisotropy among the (1100) planes. The size of nano triangle was 87 nm in width, 5 nm in height, and the density was 5 x 10(8) cm(-2), when the growth time was 30 s. This is the first report on the self assembled growth of nano triangles within a highly strained material system.

Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN substrate.

n-type GaN epitaxial layers were regrown on the patterned n-type GaN substrate (PNS) with different size of silicon dioxide (SiO2) nano dots to improve the crystal quality and optical properties. PNS with SiO2 nano dots promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Transmission electron microscopy (TEM) analysis suggested that PNS with SiO2 nano dots have superior crystalline properties. Hall measurements indicated that incrementing values in electron mobility were clear indication of reduction in threading dislocation and it was confirmed by TEM analysis. Photoluminescence (PL) intensity was enhanced by 2.0 times and 3.1 times for 1-step and 2-step PNS, respectively.

Fabrication of 380 nm ultra violet light emitting diodes on nano-patterned n-type GaN substrate.

380 nm ultraviolet (UV) light emitting diodes (LEDs) were grown on patterned n-type GaN substrate (PNS) with silicon dioxide (SiO2) nano pattern to improve the light output efficiency. Wet etched self assembled indium tin oxide (ITO) nano clusters serves as dry etching mask for converting the SiO2 layer grown on n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. Three different diameter of ITO such as 200, 250 and 300 nm were used for SiO2 nano pattern fabrication. PNS is obtained by n-GaN regrowth on SiO2 nano patterns and UV LEDs were grown on PNS template by MOCVD. Enhanced light output intensity was observed by employing SiO2 nano patterns on n-GaN. Among different PNS UV LEDs, LED grown on PNS with 300 nm ITO diameter showed enhancement in light output intensity by 2.1 times compared to the reference LED without PNS.

Antimony surfactant effect on green emission InGaN/GaN multi quantum wells grown by MOCVD.

An improvement in the optical and structural properties of green emitting InGaN/GaN Multi Quantum Wells (MQWs) was obtained by using antimony (Sb) as a surfactant during InGaN growth. Keeping the growth conditions for InGaN constant, Sb was introduced during InGaN growth while varying the [Sb]/([In]+ [Ga]) flow ratio from 0 to 0.16%. The analysis results suggest that using the optimum [Sb]/([In]+[Ga]) ratio (0.04%-0.1%) during InGaN growth greatly improves the optical and structural properties of the MQWs without incorporating much Sb into the growing film and that the emission wavelength is also maintained with a slight blue shift. Under the optimum conditions of 0.05% Sb addition, the PL intensity was increased by as much as 3.3 times compared to the sample without Sb addition. The root mean square (RMS) roughness was reduced from 2.2 nm to 1.9 nm and the pit density was decreased from 2.0 x 10(10) cm(-2) to 1.2 x 10(10) cm(-2) when the amount of Sb was increased from 0% to 0.05%.

Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.

Improvement in light extraction efficiency of Ultra Violet-Light Emitting Diode (UV-LED) is achieved by nano-scale roughening of p-type Gallium Nitride (p-GaN) surface. The process of surface roughening is carried out by using self assembled gold (Au) nano-clusters with support of nano-size silicon-oxide (SiO2) pillars on p-GaN surface as a dry etching mask and by p-GaN regrowth in the regions not covered by the mask after dry etching. Au nano-clusters are formed by rapid thermal annealing (RTA) process carried out at 600 degrees C for 1 min using 15 nm thick Au layer on top of SiO2. The p-GaN roughness is controlled by p-GaN regrowth time. Four different time values of 15 sec, 30 sec, 60 sec and 120 sec are considered for p-GaN regrowth. Among the four different p-GaN regrowth time values 30 sec regrown p-GaN sample has the optimum roughness to increase the electroluminescence (EL) intensity to a value approximately 60% higher than the EL intensity of a conventional LED.

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along (1120) direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the nonuniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.