Exploiting Spatial Ionic Dynamics in Solid-State Organic Electrochemical Transistors for Multi-Tactile Sensing and Processing.

The human nervous system inspires the next generation of sensory and communication systems for robotics, human-machine interfaces (HMIs), biomedical applications, and artificial intelligence. Neuromorphic approaches address processing challenges; however, the vast number of sensors and their large-scale distribution complicate analog data manipulation. Conventional digital multiplexers are limited by complex circuit architecture and high supply voltage. Large sensory arrays further complicate wiring. An 'in-electrolyte computing' platform is presented by integrating organic electrochemical transistors (OECTs) with a solid-state polymer electrolyte. These devices use synapse-like signal transport and spatially dependent bulk ionic doping, achieving over 400 times modulation in channel conductance, allowing discrimination of locally random-access events without peripheral circuitry or address assignment. It demonstrates information processing from 12 tactile sensors with a single OECT output, showing clear advantages in circuit simplicity over existing all-electronic, all-digital implementations. This self-multiplexer platform offers exciting prospects for circuit-free integration with sensory arrays for high-quality, large-volume analog signal processing.

Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing.

Correction for 'High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing' by Sujaya Kumar Vishwanath et al., Mater. Horiz., 2024, 11, 2643-2656, https://doi.org/10.1039/D3MH02055J.

Electric field control of spin-orbit torque in annealed Ta/CoFeB/HfOxheterostructures via interfacial oxidation modulation.

Electric field control of spin-orbit torque (SOT) exhibits promising potential in advanced spintronic devices through interfacial modulation. In this work, we investigate the influence of electric field and interfacial oxidation on SOT efficiency in annealed Ta/CoFeB/HfOxheterostructures. By varying annealing temperatures, the damping-like SOT efficiency reaches its peak at the annealing temperature of 320 °C, with an 80% field-free magnetization switching ratio induced by SOT having been demonstrated. This enhancement is ascribed to the annealing-induced modulation of oxygen ion migration at the CoFeB/HfOxinterface. By applying voltages across the Ta/CoFeB/HfOxheterostructures, which drives the O2‒migration across the interface, a reversible, bipolar, and non-volatile modulation of SOT efficiency was observed. The collective influence of annealing temperature and electric field effects on SOT carried out in this work provides an effective approach into facilitating the optimization and control of SOT in spintronic devices.

Deformable anthropomorphic pelvis phantom for dose accumulation verification.

Objective.The validation of deformable image registration (DIR) for contour propagation is often done using contour-based metrics. Meanwhile, dose accumulation requires evaluation of voxel mapping accuracy, which might not be accurately represented by contour-based metrics. By fabricating a deformable anthropomorphic pelvis phantom, we aim to (1) quantify the voxel mapping accuracy for various deformation scenarios, in high- and low-contrast regions, and (2) identify any correlation between dice similarity coefficient (DSC), a commonly used contour-based metric, and the voxel mapping accuracy for each organ.Approach. Four organs, i.e. pelvic bone, prostate, bladder and rectum (PBR), were 3D printed using PLA and a Polyjet digital material, and assembled. The latter three were implanted with glass bead and CT markers within or on their surfaces. Four deformation scenarios were simulated by varying the bladder and rectum volumes. For each scenario, nine DIRs with different parameters were performed on RayStation v10B. The voxel mapping accuracy was quantified by finding the discrepancy between true and mapped marker positions, termed the target registration error (TRE). Pearson correlation test was done between the DSC and mean TRE for each organ.Main results. For the first time, we fabricated a deformable phantom purely from 3D printing, which successfully reproduced realistic anatomical deformations. Overall, the voxel mapping accuracy dropped with increasing deformation magnitude, but improved when more organs were used to guide the DIR or limit the registration region. DSC was found to be a good indicator of voxel mapping accuracy for prostate and rectum, but a comparatively poorer one for bladder. DSC > 0.85/0.90 was established as the threshold of mean TRE ⩽ 0.3 cm for rectum/prostate. For bladder, extra metrics in addition to DSC should be considered.Significance. This work presented a 3D printed phantom, which enabled quantification of voxel mapping accuracy and evaluation of correlation between DSC and voxel mapping accuracy.

NIR and magnetism dual-response multi-core magnetic vortex nanoflowers for boosting magneto-photothermal cancer therapy.

Due to the relatively low efficiency of magnetic hyperthermia and photothermal conversion, it is rather challenging for magneto-photothermal nanoagents to be used as an effective treatment during tumor hyperthermal therapy. The advancement of magnetic nanoparticles exhibiting a vortex-domain structure holds great promise as a viable strategy to enhance the application performance of conventional magnetic nanoparticles while retaining their inherent biocompatibility. Here, we report the development of Mn0.5Zn0.5Fe2O4 nanoflowers with ellipsoidal magnetic cores, and show them as effective nanoagents for magneto-photothermal synergistic therapy. Comparative studies were conducted on the heating performance of anisometric Mn0.5Zn0.5Fe2O4 (MZF) nanoparticles, including nanocubes (MZF-C), hollow spheres (MZF-HS), nanoflowers consisting of ellipsoidal magnetic cores (MZF-NFE), and nanoflowers consisting of needle-like magnetic cores (MZF-NFN). MZF-NFE exhibits an intrinsic loss parameter (ILP) of up to 15.3 N h m2 kg-1, which is better than that of commercial equivalents. Micromagnetic simulations reveal the magnetization configurations and reversal characteristics of the various MZF shapes. Additionally, all nanostructures displayed a considerable photothermal conversion efficiency rate of more than 18%. Our results demonstrated that by combining the dual exposure of MHT and PTT for hyperthermia treatments induced by MZF-NFE, BT549, MCF-7, and 4T1 cell viability can be significantly decreased by ∼95.7% in vitro.

Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications.

Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing on the utilization of spin-orbit torque (SOT) to drive DW motion. However, devices relying on the DW position require efficient DW pinning. Here, we achieve granular magnetization switching by incorporating an HfOx insertion layer between the Co/Ti interface. This corresponds to a transition in the switching model from the DW motion to DW nucleation. Compared to the conventional Pt/Co/Ti structure, incorporation of the HfOx layer results in an enhanced SOT efficiency and a lower switching current density. We also realized stable multistate storage and synaptic plasticity by applying pulse current in the Pt/Co/HfOx/Ti device. The simulation of artificial neural networks (ANN) based on the device can perform digital recognition tasks with an accuracy rate of 91%. These results identify that DW nucleation with a Pt/Co/HfOx/Ti based device has potential applications in multistate storage and ANN.

High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing.

Despite impressive demonstrations of memristive behavior with halide perovskites, no clear pathway for material and device design exists for their applications in neuromorphic computing. Present approaches are limited to single element structures, fall behind in terms of switching reliability and scalability, and fail to map out the analog programming window of such devices. Here, we systematically design and evaluate robust pyridinium-templated one-dimensional halide perovskites as crossbar memristive materials for artificial neural networks. We compare two halide perovskite 1D inorganic lattices, namely (propyl)pyridinium and (benzyl)pyridinium lead iodide. The absence of conjugated, electron-rich substituents in PrPyr+ prevents edge-to-face type π-stacking, leading to enhanced electronic isolation of the 1D iodoplumbate chains in (PrPyr)[PbI3], and hence, superior resistive switching performance compared to (BnzPyr)[PbI3]. We report outstanding resistive switching behaviours in (PrPyr)[PbI3] on the largest flexible crossbar implementation (16 × 16) to date - on/off ratio (>105), long term retention (105 s) and high endurance (2000 cycles). Finally, we put forth a universal approach to comprehensively map the analog programming window of halide perovskite memristive devices - a critical prerequisite for weighted synaptic connections in artificial neural networks. This consequently facilitates the demonstration of accurate handwritten digit recognition from the MNIST database based on spike-timing-dependent plasticity of halide perovskite memristive synapses.

Control-Etched Ti3C2Tx MXene Nanosheets for a Low-Voltage-Operating Flexible Memristor for Efficient Neuromorphic Computation.

Hardware neural networks with mechanical flexibility are promising next-generation computing systems for smart wearable electronics. Overcoming the challenge of developing a fully synaptic plastic network, we demonstrate a low-operating-voltage PET/ITO/p-MXene/Ag flexible memristor device by controlling the etching of aluminum metal ions in Ti3C2Tx MXene. The presence of a small fraction of Al ions in partially etched MXene (p-Ti3C2Tx) significantly suppresses the operating voltage to 1 V compared to 7 V from fully Al etched MXene (f-Ti3C2Tx)-based devices. Former devices exhibit excellent non-volatile data storage properties, with a robust ∼103 ON/OFF ratio, high endurance of ∼104 cycles, multilevel resistance states, and long data retention measured up to ∼106 s. High mechanical stability up to ∼73° bending angle and environmental robustness are confirmed with consistent switching characteristics under increasing temperature and humid conditions. Furthermore, a p-Ti3C2Tx MXene memristor is employed to mimic the biological synapse by measuring the learning-forgetting pattern for ∼104 cycles as potentiation and depression. Spike time-dependent plasticity (STDP) based on Hebb's Learning rules is also successfully demonstrated. Moreover, a remarkable accuracy of ∼95% in recognizing modified patterns from the National Institute of Standards and Technology (MNIST) data set with just 29 training epochs is achieved in simulation. Ultimately, our findings underscore the potential of MXene-based flexible memristor devices as versatile components for data storage and neuromorphic computing.

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations.

The forefront of neuromorphic research strives to develop devices with specific properties, i.e., linear and symmetrical conductance changes under external stimuli. This is paramount for neural network accuracy when emulating a biological synapse. A parallel exploration of resistive memory as a replacement for conventional computing memory ensues. In search of a holistic solution, the proposed memristive device in this work is uniquely poised to address this elusive gap as a unified memory solution. Opposite biasing operations are leveraged to achieve stable abrupt and gradual switching characteristics within a single device, addressing the demands for lower latency and energy consumption for binary switching applications, and graduality for neuromorphic computing applications. We evaluated the underlying principles of both switching modes, attributing the anomalous gradual switching to the modulation of oxygen-deficient layers formed between the active electrode and oxide switching layer. The memristive cell (1R) was integrated with 40 nm transistor technology (1T) to form a 1T-1R memory cell, demonstrating a switching speed of 50 ns with a pulse amplitude of ±2.5 V in its forward-biased mode. Applying pulse trains of 20 ns to 490 ns in the reverse-biased mode exhibited synaptic weight properties, obtaining a nonlinearity (NL) factor of <0.5 for both potentiation and depression. The devices in both modes also demonstrated an endurance of >106 cycles, and their conductance states were also stable under temperature stress at 85 °C for 104 s. With the duality of the two switching modes, our device can be used for both memory and synaptic weight-storing applications.

Spin-based magnetic random-access memory for high-performance computing.

Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing performance and ignite the development of new computing architectures.