RESUMEN
In this study, we presented flat-topped coherent supercontinuum lasers with tunable repetition rates and programmable spectral bandwidths. Supercontinuum sources with ultra-broadband and high-repetition-rate coverage can be achieved by merging nonlinearly broadened electro-optic optical frequency combs with optical line-by-line spectrum shaping. Spectral bandwidth programming is implemented by iterative spectrum shaping and input power control of highly nonlinear stages, whereas repetition rate tuning is performed by modulation speed control in optical frequency combs. Herein, we implemented a programmable and tunable flat-topped supercontinuum with a maximum bandwidth and repetition rate of 55 nm at 10 dB and 50 GHz, respectively. To clarify the coherence of the supercontinuum during tuning and programming, we performed a phase-noise analysis. We proposed a remarkably modified self-heterodyne method to measure the phase noise of each mode precisely by filtering specific supercontinuum taps in a Mach-Zehnder interferometer. With this method, it has been proved that the single-sideband spectra in each mode are almost similar to that of the RF clock, indicating that our programmable and tunable supercontinuum generation process added minimal degradation to the phase noise properties. This study shows possibilities for generating hundreds of programmable and tunable flat-topped optical carriers with robustness and coherence.
RESUMEN
The trap states and defects near the active region in deep-ultraviolet (DUV) light-emitting diodes (LED) were investigated through wavelength-dependent photocurrent spectroscopy. We observed anomalous photocurrent reversal and its temporal recovery in AlGaN-based DUV LEDs as the wavelength of illuminating light varied from DUV to visible. The wavelength-dependent photocurrent measurements were performed on 265 nm-emitting DUV LEDs under zero-bias conditions. Sharp near-band-edge (~265 nm) absorption was observed in addition to broad (300-800 nm) visible-range absorption peaks in the photocurrent spectrum, while the current direction of these two peaks were opposite to each other. In addition, the current direction of the photocurrent in the visible wavelength range was reversed when a certain forward bias was applied. This bias-induced current reversal displayed a slow recovery time (~6 h) when the applied forward voltage was removed. Furthermore, the recovery time showed strong temperature dependency and was faster as the sample temperature increased. This result can be consistently explained by the presence of hole traps at the electron-blocking layer and the band bending caused by piezoelectric polarization fields. The activation energy of the defect state was calculated to be 279 meV using the temperature dependency of the recovery time.
