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1.
Nanotechnology ; 29(4): 045602, 2018 Jan 26.
Artículo en Inglés | MEDLINE | ID: mdl-29135463

RESUMEN

We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.

2.
Opt Express ; 23(21): 26940-51, 2015 Oct 19.
Artículo en Inglés | MEDLINE | ID: mdl-26480355

RESUMEN

In this study, slot waveguide ring resonators patterned on a silicon-on-insulator (SOI) wafer and coated with an atomic layer deposited nanolaminate consisting of alternating layers of tantalum pentoxide and polyimide were fabricated and characterized. To the best of our knowledge, this is the first demonstration of atomic layer deposition (ALD) of organic materials in waveguiding applications. In our nanolaminate ring resonators, the optical power is not only confined in the narrow central air slot but also in several parallel sub-10 nm wide vertical polyimide slots. This indicates that the mode profiles in the silicon slot waveguide can be accurately tuned by the ALD method. Our results show that ALD of organic and inorganic materials can be combined with conventional silicon waveguide fabrication techniques to create slot waveguide ring resonators with varying mode profiles. This can potentially open new possibilities for various photonic applications, such as optical sensing and all-optical signal processing.

3.
Nanotechnology ; 23(26): 265402, 2012 Jul 05.
Artículo en Inglés | MEDLINE | ID: mdl-22699243

RESUMEN

We report on the growth and electro-optical studies of photovoltaic properties of GaAsP nanowires. Low density GaAsP nanowires were grown by Au assisted MOVPE on Si(001) substrates using a two step procedure to form a radial p-n junction. The STEM analyses show that the nanowires have cubic structure with the alloy composition GaAs0.88P0.12 in the nanowire core and GaAs0.76P0.24 in the shell. The nanowire ensembles were processed in the form of sub-millimeter size mesas. The photovoltaic properties were characterized by optical beam induced current (OBIC) and electronic beam induced current (EBIC) maps. Both OBIC and EBIC maps show that the photovoltage is generated by the nanowires; however, a strong signal variation from wire to wire is observed. Only one out of six connected nanowires produce a measurable signal. These strong fluctuations can be tentatively explained by the variation of the resistance of the nanowire-to-substrate connection, which is highly sensitive to the quality of the Si-GaAsP interface. This study demonstrates the importance of the spatially resolved charge collection microscopy techniques for the diagnosis of failures in nanowire photovoltaic devices.

4.
Opt Express ; 15(13): 8323-8, 2007 Jun 25.
Artículo en Inglés | MEDLINE | ID: mdl-19547162

RESUMEN

The geometry of photonic crystal waveguides with ring-shaped holes is optimized to minimize dispersion in the slow light regime. We found geometries with a nearly constant group index in excess of 20 over a wavelength range of 8 nm. The origin of the low dispersion is related to the widening of the propagating mode close to the lower band gap edge.

5.
Nanotechnology ; 17(6): 1580-3, 2006 Mar 28.
Artículo en Inglés | MEDLINE | ID: mdl-26558562

RESUMEN

The formation and photoluminescence (PL) of InP nanowires grown by metal organic vapour phase epitaxy on InP(111)B substrates, using colloidal gold nanoparticles as catalysts, are investigated. The dependence of the orientation and dimensions of the nanowires on the growth temperature is studied using scanning electron microscopy. Vertically aligned [Formula: see text] oriented nanowires with a mean base diameter in the range 50-150 nm, and a tip diameter of 50 nm, show a PL blue-shift of about 80 meV compared to the substrate. Blue-shift due to quantum confinement is ruled out because of the large diameter of the nanowires. A clear correlation between the orientation of the nanowires on the substrate and the PL peak position is observed. Based on x-ray diffraction and transmission electron microscopy measurements, it is proposed that the as-grown vertically oriented nanowires have crystallized in the wurtzite lattice instead of in the zinc-blende structure, which results in a blue-shifted PL.

6.
Phys Rev Lett ; 77(2): 342-345, 1996 Jul 08.
Artículo en Inglés | MEDLINE | ID: mdl-10062427
7.
Phys Rev B Condens Matter ; 51(19): 13868-13871, 1995 May 15.
Artículo en Inglés | MEDLINE | ID: mdl-9978209
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