Building a Layer-Structured Aluminum/Graphene Composite with Significant Improvement in Electrical Conductivity.

Aluminum (Al) and its alloys are widely used in various fields due to their excellent physical properties. Although many efforts have been made to fabricate an Al-based composite, they usually results in a significant decrease in electrical conductivity. Herein, a special layer-structured Al/graphene (Gr)/Al composite was successfully designed and fabricated through a facile method using the ultrasonic spraying of graphene powder with alumina removal and a subsequent vacuum hot-pressing process. The as-obtained Al/Gr/Al composite presents a significantly enhanced electrical conductivity of 66% IACS, which is much higher than that of other reported Al-based composites, while it still maintains similar mechanical properties. This work provides a new strategy for the development of highly conductive Al-based composites, which would be very useful and important for practical applications.

Room-temperature sulfur doped NiMoO4 with enhanced conductivity and catalytic activity for efficient hydrogen evolution reaction in alkaline media.

Transition metal oxides have been acknowledged for their exceptional water splitting capabilities in alkaline electrolytes, however, their catalytic activity is limited by low conductivity. The introduction of sulfur (S) into nickel molybdate (NiMoO4) at room temperature leads to the formation of sulfur-doped NiMoO4 (S-NiMoO4), thereby significantly enhancing the conductivity and facilitating electron transfer in NiMoO4. Furthermore, the introduction of S effectively modulates the electron density state of NiMoO4 and facilitates the formation of highly active catalytic sites characterized by a significantly reduced hydrogen absorption Gibbs free energy (ΔGH*) value of -0.09 eV. The electrocatalyst S-NiMoO4 exhibits remarkable catalytic performance in promoting the hydrogen evolution reaction (HER), displaying a significantly reduced overpotential of 84 mV at a current density of 10 mA cm-2 and maintaining excellent durability at 68 mA cm-2 for 10 h (h). Furthermore, by utilizing the anodic sulfide oxidation reaction (SOR) instead of the sluggish oxygen evolution reaction (OER), the assembled electrolyzer employing S-NiMoO4 as both the cathode and anode need merely 0.8 V to achieve 105 mA cm-2, while simultaneously producing hydrogen gas (H2) and S monomer. This work paves the way for improving electron transfer and activating active sites of metal oxides, thereby enhancing their HER activity.

Identifying interstitial lung disease associated chemicals by integrating transcriptome-wide association study and chemical-gene interaction networks.

Interstitial lung diseases (ILD) comprise a heterogeneous group of lung disease characterized by common clinical syndromes and patterns of lung injury which poses growing burden on the health and social economic consequences. Its etiology remains elusive. By integrating transcriptome-wide association studies analysis of ILD and chemical-gene interaction networks implemented by CGSEA software, we systematically evaluated the association between ILD and 11,190 chemicals in this study. We detected several chemicals significantly associated with ILD (permutated empirical P values < 0.05). Briefly, a total of 56 chemicals were detected for ILD in lung tissue, 121 in whole blood respectively. Among the chemicals identified for ILD in lung tissue and whole blood, we found 7 common chemicals, including St. Thomas' Hospital cardioplegic solution, cytarabine, ginsenoside Rg3, cholecalciferol, fluoxetine, oxidized-L-alpha-1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphorylcholine and excitatory amino acid agonists. Our findings shed lights on the underlying impact of chemical exposure on the development and progression of ILD, which will pave the way for more effective prevention and treatment strategies, ultimately improving the health outcomes and quality of life of those affected by ILD.

Using proteomics and metabolomics to identify therapeutic targets for senescence mediated cancer: genetic complementarity method.

Background: Senescence have emerged as potential factors of lung cancer risk based on findings from many studies. However, the underlying pathogenesis of lung cancer caused by senescence is not clear. In this study, we try to explain the potential pathogenesis between senescence and lung cancer through proteomics and metabonomics. And try to find new potential therapeutic targets in lung cancer patients through network mendelian randomization (MR). Methods: The genome-wide association data of this study was mainly obtained from a meta-analysis and the Transdisciplinary Research in Cancer of the Lung Consortium (TRICL), respectively.And in this study, we mainly used genetic complementarity methods to explore the susceptibility of aging to lung cancer. Additionally, a mediation analysis was performed to explore the potential mediating role of proteomics and metabonomics, using a network MR design. Results: GNOVA analysis revealed a shared genetic structure between HannumAge and lung cancer with a significant genetic correlation estimated at 0.141 and 0.135, respectively. MR analysis showed a relationship between HannumAge and lung cancer, regardless of smoking status. Furthermore, genetically predicted HannumAge was consistently associated with the proteins C-type lectin domain family 4 member D (CLEC4D) and Retinoic acid receptor responder protein 1 (RARR-1), indicating their potential role as mediators in the causal pathway. Conclusion: HannumAge acceleration may increase the risk of lung cancer, some of which may be mediated by CLEC4D and RARR-1, suggestion that CLEC4D and RARR-1 may serve as potential drug targets for the treatment of lung cancer.

Strain Engineering in 2D Material-Based Flexible Optoelectronics.

Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.

Molecule-Upgraded van der Waals Contacts for Schottky-Barrier-Free Electronics.

The applications of any ultrathin semiconductor device are inseparable from high-quality metal-semiconductor contacts with designed Schottky barriers. Building van der Waals (vdWs) contacts of 2D semiconductors represents an advanced strategy of lowering the Schottky barrier height by reducing interface states, but will finally fail at the theoretical minimum barrier due to the inevitable energy difference between the semiconductor electron affinity and the metal work function. Here, an effective molecule optimization strategy is reported to upgrade the general vdWs contacts, achieving near-zero Schottky barriers and creating high-performance electronic devices. The molecule treatment can induce the defect healing effect in p-type semiconductors and further enhance the hole density, leading to an effectively thinned Schottky barrier width and improved carrier interface transmission efficiency. With an ultrathin Schottky barrier width of ≈2.17 nm and outstanding contact resistance of ≈9 kΩ µm in the optimized Au/WSe2 contacts, an ultrahigh field-effect mobility of ≈148 cm2  V-1 s-1 in chemical vapor deposition grown WSe2 flakes is achieved. Unlike conventional chemical treatments, this molecule upgradation strategy leaves no residue and displays a high-temperature stability at >200 °C. Furthermore, the Schottky barrier optimization is generalized to other metal-semiconductor contacts, including 1T-PtSe2 /WSe2 , 1T'-MoTe2 /WSe2 , 2H-NbS2 /WSe2 , and Au/PdSe2 , defining a simple, universal, and scalable method to minimize contact resistance.

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions.

The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T'-MoTe2 and the semiconducting monolayer MoS2. We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS2, the Schottky barrier width can be effectively enlarged by 59%. The 1 T'-MoTe2/healed-MoS2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 105, and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.

The reform of supply of public health services leading the training of sports professionals in local colleges and universities in the background of healthy china / A reforma da oferta dos serviços de saúde pública nas escolas e universidades locais no contexto da china saudável / La reforma del lado de la oferta de los servicios de salud pública para la formación de profesionales del deporte en las universidades locales en el marco de una china saludable

ABSTRACT With the continuous expansion of public health services, the output of sports talents under the existing training mode of sports talents in Colleges and Universities has been unable to meet the market demand of social sports, so it is inevitable to optimize the existing talent training mode. Based on the original "dual system" teaching mode of college sports talents, this study incorporated the LDTA model to optimize and adjust it, so as to establish a new college sports talent training system. In order to prove the feasibility of the new sports talent training system, after analyzing the market economy of the local social sports industry and the basic situation of students, this paper studies the application of the new sports talent training system to the practical teaching of physical education students in 2017 in university X from 2019 to the first half of 2020, and compares the final scores of the students under the original teaching mode and the new sports talent training system. At present, the students' final scores under the new PE talent training system are generally higher than those under the original teaching mode. It is also found that for some practical skills courses, the students' performance under the new PE talent training system is obviously better than that under the original teaching mode. All these results show that the new sports talent training system established by the research is feasible, and has high practical value for promoting the reform of the supply of sports talents in Colleges and Universities and improving the professional skills and knowledge level of sports talents.

RESUMO Com a contínua expansão do dos serviços de saúde pública, a produção de talentos esportivos sob o modo de treinamento existente em faculdades e universidades não tem atendido a demanda da indústria esportiva social, por isso é inevitável otimizar o modo de treinamento de talentos existente. Baseado no modo de ensino original dual system de talentos esportivos universitários, este estudo utilizou o modelo LDTA para otimizá-lo e ajustá-lo, de modo a estabelecer um novo sistema de treinamento de talentos esportivos universitários. A fim de provar a viabilidade do novo sistema de formação de talentos desportivos, após analisar a economia de bercado da indústria desportiva social local e a situação básica dos estudantes, este documento estuda a aplicação do novo sistema de treinamento de talentos esportivos ao ensino prático dos alunos, em 2017, da escola de educação física da Universidade X de 2019 até a primeira metade de 2020, e compara as pontuações finais dos alunos sob o modo de ensino original e o novo sistema de treinamento de talentos esportivos. Atualmente, as pontuações finais dos estudantes no âmbito do novo sistema de formação de talentos esportivos são geralmente superiores às do modo de ensino inicial. Constata-se também que, para alguns cursos de competências práticas, o desempenho dos estudantes no âmbito do novo sistema de formação de talentos esportivos é obviamente melhor do que o do modo de ensino inicial. Todos esses resultados mostram que o novo sistema de formação de talentos desportivos instituído pela investigação é viável e tem um elevado valor prático para promover a reforma da oferta de talentos desportivos nas faculdades e universidades e para melhorar as competências profissionais e o nível de conhecimentos dos talentos esportivos.

RESUMEN Con la continua expansión de los servicios de salud pública, la producción de talentos deportivos bajo el modo de entrenamiento existente en Colegios y Universidades no ha podido satisfacer la demanda del mercado de deportes sociales, por lo que es inevitable optimizar el modo de entrenamiento de talentos existente. Basado en el modo de enseñanza original de "sistema dual" de talentos deportivos universitarios, este estudio incorporó el modelo LDTA para optimizarlo y ajustarlo, a fin de establecer un nuevo sistema de entrenamiento de dichos talentos. Con el fin de demostrar la viabilidad del nuevo sistema de formación de talento deportivo, tras analizar la economía de mercado de la industria sociodeportiva local y la situación básica de los estudiantes, este trabajo estudia la aplicación del nuevo sistema de formación de talento deportivo a la docencia práctica de los estudiantes en 2017 del Colegio de Educación Física de la universidad X, y desde 2019 hasta el primer semestre de 2020, y compara los puntajes finales de los estudiantes bajo el modo de enseñanza original y el nuevo sistema de entrenamiento de talento deportivo.. En la actualidad, los puntajes finales de los estudiantes bajo el nuevo sistema de formación de talentos de educación física son generalmente más altos que los del modo de enseñanza original. También se encuentra que, para algunos cursos de habilidades prácticas, el desempeño de los estudiantes bajo el nuevo sistema de formación de talentos de educación física es obviamente mejor que el del modo de enseñanza original. Todos estos resultados muestran que el nuevo sistema de formación de talentos deportivos establecido por la investigación es factible y tiene un alto valor práctico para promover la reforma de la oferta de talentos deportivos en Colegios y Universidades y mejorar las habilidades profesionales y el nivel de conocimiento de los talentos deportivos.

Hidden Vacancy Benefit in Monolayer 2D Semiconductors.

Monolayer 2D semiconductors (e.g., MoS2 ) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. Minimizing the lattice defects in 2D semiconductors represents a common strategy to improve their electronic properties, but has met with limited success to date. Herein, a hidden benefit of the atomic vacancies in monolayer 2D semiconductors to push their performance limit is reported. By purposely tailoring the sulfur vacancies (SVs) to an optimum density of 4.7% in monolayer MoS2 , an unusual mobility enhancement is obtained and a record-high carrier mobility (>115 cm2 V-1 s-1 ) is achieved, realizing monolayer MoS2 transistors with an exceptional current density (>0.60 mA µm-1 ) and a record-high on/off ratio >1010 , and enabling a logic inverter with an ultrahigh voltage gain >100. The systematic transport studies reveal that the counterintuitive vacancy-enhanced transport originates from a nearest-neighbor hopping conduction model, in which an optimum SV density is essential for maximizing the charge hopping probability. Lastly, the vacancy benefit into other monolayer 2D semiconductors is further generalized; thus, a general strategy for tailoring the charge transport properties of monolayer materials is defined.

Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection.

The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 104 A W-1 ) and detectivity (D* = 6.83 × 1014 Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τR  = 3.97 s, τD  = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.

Defect-Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters.

Ultrathin molybdenum disulfide (MoS2 ) presents ideal properties for building next-generation atomically thin circuitry. However, it is difficult to construct logic units of MoS2 monolayer using traditional silicon-based doping schemes, such as atomic substitution and ion implantation, as they cause lattice disruption and doping instability. An accurate and feasible electronic structure modulation strategy from defect engineering is proposed to construct homogeneous electronics for MoS2 monolayer logic inverters. By utilizing the energy-matched electron induction of the solution process, numerous pure and lattice-stable monosulfur vacancies (Vmonos ) are introduced to modulate the electronic structure of monolayer MoS2 via a shallow trapping effect. The resulting modulation effectively reduces the electronic concentration of MoS2 and improves the work function by 100 meV. Under modulation of Vmonos , an atomically thin homogenous monolayer MoS2 logic inverter with a voltage gain of 4 is successfully constructed. A brand-new and practical design route of defect modulation for 2D-based circuit development is provided.

Strain-Engineered van der Waals Interfaces of Mixed-Dimensional Heterostructure Arrays.

van der Waals (vdWs) heterostructures have provided a platform for nanoscale material integrations and enabled promise for use in optoelectronic devices. Because of the ultrastrength of two-dimensional materials, strain engineering is considered as an effective way to tune their band structures and further tailor the interface performance of vdWs heterostructures. However, the less-constrained vdWs interfaces make the traditional strain technique via lattice-mismatched growth infeasible. Here, we report a strategy to construct mixed-dimensional heterostructure arrays with periodically strain-engineered vdWs interfaces utilizing one-dimensional semiconductor-induced nanoindentation. Using monolayer MoS2 (1L-MoS2)/ZnO heterostructure arrays as a model system, we demonstrate inhomogeneous built-in strain gradient at the heterointerfaces ranging from 0 to 0.6% tensile. Through systematic optical characterization of the hybrid structures, we verify that strain can improve the interfacial charge transfer efficiency. Consequently, we observe that the photoluminescence (PL) emission of 1L-MoS2 at strained interfaces is dramatically quenched more than 50% with respect to that at unstrained interfaces. Furthermore, we confirm that the strain-optimized interfacial carrier behavior is attributed to the reduction of interfacial barrier height, which originated from the strain-dependent Fermi level of 1L-MoS2. These results demonstrate that strain provides another degree of freedom in tuning the vdWs interface performance and our method developed here should enable flexibility in achieving more sophisticated vdWs integration via strain engineering.

Self-Healing Originated van der Waals Homojunctions with Strong Interlayer Coupling for High-Performance Photodiodes.

The dangling-bond-free surfaces of van der Waals (vdW) materials make it possible to build ultrathin junctions. Fundamentally, the interfacial phenomena and related optoelectronic properties of vdW junctions are modulated by the interlayer coupling effect. However, the weak interlayer coupling of vdW heterostructures limits the interlayer charge transfer efficiency, resulting in low photoresponsivity. Here, a bilayer MoS2 homogeneous junction is constructed by stacking the as-grown onto the self-healed monolayer MoS2. The homojunction barrier of ∼165 meV is obtained by the electronic structure modulation of defect self-healing. This homojunction reveals the stronger interlayer coupling effect in comparison with vdW heterostructures. This ultrastrong interlayer coupling effect is experimentally verified by Raman spectra and angle-resolved photoemission spectroscopy. The ultrafast interlayer charge transfer takes place within ∼447 fs, which is faster than those of most vdW heterostructures. Furthermore, the homojunction photodiode manifests outstanding rectifying behavior with an ideal factor of ∼1.6, perfect air stability over 12 months, and high responsivity of ∼54.6 mA/W. Moreover, the interlayer exciton peak of ∼1.66 eV is found in vdW homojunctions. This work offers an uncommon vdW junction with strong interlayer coupling and perfects the relevance of interlayer coupling and interlayer charge transfer.

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode.

We establish a powerful poly(4-styrenesulfonate) (PSS)-treated strategy for sulfur vacancy healing in monolayer MoS2 to precisely and steadily tune its electronic state. The self-healing mechanism, in which the sulfur vacancies are healed spontaneously by the sulfur adatom clusters on the MoS2 surface through a PSS-induced hydrogenation process, is proposed and demonstrated systematically. The electron concentration of the self-healed MoS2 dramatically decreased by 643 times, leading to a work function enhancement of ∼150 meV. This strategy is employed to fabricate a high performance lateral monolayer MoS2 homojunction which presents a perfect rectifying behaviour, excellent photoresponsivity of ∼308 mA W-1 and outstanding air-stability after two months. Unlike previous chemical doping, the lattice defect-induced local fields are eliminated during the process of the sulfur vacancy self-healing to largely improve the homojunction performance. Our findings demonstrate a promising and facile strategy in 2D material electronic state modulation for the development of next-generation electronics and optoelectronics.