RESUMEN
The successful growth of non-van der Waals (vdW) group-III nitride epilayers on vdW substrates not only opens an unprecedented opportunity to obtain high-quality semiconductor thinfilm but also raises a strong debate for its growth mechanism. Here, combining multiscale computational approaches and experimental characterization, we propose that the growth of a nitride epilayer on a vdW substrate, e.g., AlN on graphene, may belong to a previously unknown model, named hybrid vdW epitaxy (HVE). Atomic-scale simulations demonstrate that a unique interfacial hybrid-vdW interaction can be created between AlN and graphene, and, consequently, a first-principles-based continuum growth model is developed to capture the unusual features of HVE. Surprisingly, it is revealed that the in-plane and out-of-plane growth are strongly correlated in HVE, which is absent in existing growth models. The concept of HVE is confirmed by our experimental measurements, presenting a new growth mechanism beyond the current category of material growth.
