High-Entropy Materials for Application: Electricity, Magnetism, and Optics.

High-entropy materials (HEMs) have recently emerged as a prominent research focus in materials science, gaining considerable attention because of their complex composition and exceptional properties. These materials typically comprise five or more elements mixed approximately in equal atomic ratios. The resultant high-entropy effects, lattice distortions, slow diffusion, and cocktail effects contribute to their unique physical, chemical, and optical properties. This study reviews the electrical, magnetic, and optical properties of HEMs and explores their potential applications. Additionally, it discusses the theoretical calculation methods and preparation techniques for HEMs, thereby offering insights and prospects for their future development.

New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO2 Ferroelectric Memristor.

Today's computing systems, to meet the enormous demands of information processing, have driven the development of brain-inspired neuromorphic systems. However, there are relatively few optoelectronic devices in most brain-inspired neuromorphic systems that can simultaneously regulate the conductivity through both optical and electrical signals. In this work, the Au/MXene/Y:HfO2/FTO ferroelectric memristor as an optoelectronic artificial synaptic device exhibited both digital and analog resistance switching (RS) behaviors under different voltages with a good switching ratio (>103). Under optoelectronic conditions, optimal weight update parameters and an enhanced algorithm achieved 97.1% recognition accuracy in convolutional neural networks. A new logic gate circuit specifically designed for optoelectronic inputs was established. Furthermore, the device integrates the impact of relative humidity to develop an innovative three-person voting mechanism with a veto power. These results provide a feasible approach for integrating optoelectronic artificial synapses with logic-based computing devices.

Neuromorphic Computing of Optoelectronic Artificial BFCO/AZO Heterostructure Memristors Synapses.

Compared with purely electrical neuromorphic devices, those stimulated by optical signals have gained increasing attention due to their realistic sensory simulation. In this work, an optoelectronic neuromorphic device based on a photoelectric memristor with a Bi2FeCrO6/Al-doped ZnO (BFCO/AZO) heterostructure is fabricated that can respond to both electrical and optical signals and successfully simulate a variety of synaptic behaviors, such as STP, LTP, and PPF. In addition, the photomemory mechanism was identified by analyzing the energy band structures of AZO and BFCO. A convolutional neural network (CNN) architecture for pattern classification at the Mixed National Institute of Standards and Technology (MNIST) was used and improved the recognition accuracy of the MNIST and Fashion-MNIST datasets to 95.21% and 74.19%, respectively, by implementing an improved stochastic adaptive algorithm. These results provide a feasible approach for future implementation of optoelectronic synapses.

An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing.

Neuromorphic computing, which mimics biological neural networks, is widely regarded as the optimal solution for addressing the limitations of traditional von Neumann computing architecture. In this work, an adjustable multistage resistance switching ferroelectric Bi2FeCrO6 diode artificial synaptic device was fabricated using a sol-gel method with a simple process. The device exhibits nonlinearity in its electrical characteristics, demonstrating tunable multistage resistance switching behavior and a strong ferroelectric diode effect through the manipulation of ferroelectric polarization. One of its salient advantages resides in its capacity to dynamically regulate its polarization state in response to an external electric field, thereby facilitating the fine-tuning of synaptic connection strength while maintaining synaptic stability. The device is capable of accurately simulating the fundamental properties of biological synapses, including long/short-term plasticity, paired-pulse facilitation, and spike-timing-dependent plasticity. Additionally, the device exhibits a distinctive photoelectric response and is capable of inducing synaptic plasticity by light signal activation. The utilization of a femtosecond laser for the scrutiny of carrier transport mechanisms imparts profound insights into the intricate dynamics governing the optical memory effect. Furthermore, utilizing a convolutional neural network (CNN) architecture, the recognition accuracy of the MNIST and fashion MNIST datasets was improved to 95.6% and 78%, respectively, through the implementation of improved random adaptive algorithms. These findings present a new opportunity for utilizing Bi2FeCrO6 materials in the development of artificial synapses for neuromorphic computation.

Highly Sensitive Ratiometric Fluorescent Flexible Sensor Based on the RhB@ZIF-8@PVDF Mixed-Matrix Membrane for Broad-Spectrum Antibiotic Detection.

Antibiotics play an essential role in the treatment of various diseases. However, the overuse of antibiotics has led to the pollution of water bodies and food safety, affecting human health. Herein, we report a dual-emission MOF-based flexible sensor for the detection of antibiotics in water, which was prepared by first encapsulating rhodamine B (RhB) by a zeolite imidazolium ester skeleton (ZIF-8) and then blending it with polyvinylidene difluoride (PVDF). The luminescent properties, structural tunability, and flexible porosity of the MOF-based composites were combined with the processability and flexibility of polymers to prepare luminescent membranes. The sensor is capable of dual-emission ratiometric fluorescence sensing of nitrofurantoin (NFT) and oxytetracycline (OTC), exhibiting sensitive detection of fluorescence burst and fluorescence enhancement, respectively, with detection limits of 0.012 µM and 8.9 nM. With the advantages of visual detection, high sensitivity, short detection time, and simplicity, the highly sensitive ratiometric fluorescent flexible sensor has great potential for detecting antibiotics in an aqueous environment. It will further stimulate interest in luminescent MOF-based mixed matrix membranes and their sensing applications.

Low-cost composite film triboelectric nanogenerators for a self-powered touch sensor.

In the last two decades, nanogenerators have been studied inorder to solve the power supply problems of electronic devices. Triboelectric nanogenerators (TENGs) have gained widespread attention due to their excellent properties and wide range of applications. However, previous studies frequently ignored numerous application-related issues and even wasted some of the benefits of the TENG itself in favor of enhanced performance. Here, we propose a TENG based on BaTiO3 (BTO)-polydimethylsiloxane (PDMS) composite films with low cost and simple preparation, where its maximum output performance is obtained when the mass proportion of BTO to PDMS is 40%. In addition, we demonstrate how the single-electrode TENG may be used as a self-powered touch sensor that can communicate with a microcontroller unit (MCU) to turn LED lights on and off. This practical example will provide a valuable reference for the application of low-cost self-powered sensors in wearable devices, Internet of Things, human-machine interactions and other fields. Furthermore, we discovered a number of issues that were rarely or never addressed in previous studies and provide some solutions, such as a signal processing method for a TENG-based self-powered sensor. It serves as a foundation for future investigations on the performance assessment and application of TENGs.

Adhesive, multifunctional, and wearable electronics based on MXene-coated textile for personal heating systems, electromagnetic interference shielding, and pressure sensing.

Adhesion between flexible devices and skin surface facilitates portability of devices and reliable signal acquisition from human body, which is essential for medical therapy devices or monitoring systems. Here, we utilize a simple, cost-effective, and scalable layer-by-layer dip-coating method to fabricate a skin-adhesive multifunctional textile-based device, consisting of three parts: low-cost and easily available airlaid paper (AP) substrate, conductive MXene sensitive layer, and adhesive polydimethylsiloxane (PDMS). The adhesive layer of lightly cross-linked PDMS enables the device to form conformal contact with skin even during human joint bending. The smart textile device exhibits excellent electro-thermal and photo-thermal conversion performance with good cycling stability and tunability. Furthermore, the textile electronics show good electromagnetic interference (EMI) shielding properties due to the good electrical conductivity, as well as sensitive and stable pressure sensing properties for human motion detection. Consequently, this efficient strategy provides a possible way to design multifunctional and wearable electronic textiles for medical applications.

An Artificial Synapse Based on CsPbI3 Thin Film.

With the data explosion in the intelligent era; the traditional von Neumann computing system is facing great challenges of storage and computing speed. Compared to the neural computing system, the traditional computing system has higher consumption and slower speed. However; the feature size of the chip is limited due to the end of Moore's Law. An artificial synapse based on halide perovskite CsPbI3 was fabricated to address these problems. The CsPbI3 thin film was obtained by a one-step spin-coating method, and the artificial synapse with the structure of Au/CsPbI3/ITO exhibited learning and memory behavior similar to biological neurons. In addition, the synaptic plasticity was proven, including short-term synaptic plasticity (STSP) and long-term synaptic plasticity (LTSP). We also discuss the possibility of forming long-term memory in the device through changing input signals.

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures.

Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO2/Al-ZnO/HfO2) tri-layer structure device was prepared using the sol-gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO2 layers. The device had excellent RS properties, such as an excellent switch ratio of 104, retention of 104 s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device.

Ultra-high dielectric tuning performance and double-set resistive switching effect achieved on the Bi2NiMnO6 thin film prepared by sol-gel method.

With the development of mobile terminals, tunable capacitors for signal processing and memristors for calculation have received a lot of attention. Combining a tunable capacitor and a memristor can improve the performance of mobile terminals and reduce space requirements. In this article, we report on Bi2NiMnO6 (BNMO) films with high dielectric tuning and nonvolatile resistive switching (RS) effects. The BNMO films are fabricated by the sol-gel method and annealed at different temperatures. It exhibits a dielectric tunability of up to 92%. This high dielectric tunability may be attributed to the modulation of the interface dipole by the electric field. When an electric field is applied, the interface dipole of the BNMO film is far away from the interface of the BNMO, and then forms a conductive channel where anions and cations are mixed. The BNMO films are found to have a double-set type effect due to its dielectric tunability properties. This work introduces an ultra-high dielectric tuning material and a new type of RS effect on BNMO thin film, which can achieve tuning and memory behavior on a device.

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process.

Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and -0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi2FeCrO6 Thin Film.

As an important method to further improve the storage density of resistive memory, multistage resistive switching devices have become an important research direction. However, no stable and controllable multistage resistive switching device has been prepared, and the working mechanism is still unclear. Here, a sandwich-structured device is simply prepared by spin coating, with the work layer is the Bi2FeCrO6 thin film. The device can realize bidirectional controllable multistage resistive switching behavior, the biggest on/off ratio is 104, and it can maintain stability without attenuation at 100 times slow loop and 104 times pulse cycle. The analyzes showed that the charged ions formed by defects in the device migrated under the action of an external electric field lead to the Schottky barrier height reversible changed. Which is the key to cause multistage resistive switching behavior. This work is the first report about the voltage control of bidirectional adjustable multistage resistive switching behavior in the Bi2FeCrO6 thin film. The principle of generation is analyzed, and important ideas and insights are provided for the preparation and treatment of related multistage resistive problems.

Ferroelectric Diode Effect with Temperature Stability of Double Perovskite Bi2NiMnO6 Thin Films.

Double perovskite Bi2NiMnO6 (BNMO) thin films grown on p-Si (100) substrates with LaNiO3 (LNO) buffer layers were fabricated using chemical solution deposition. The crystal structure, surface topography, surface chemical state, ferroelectric, and current-voltage characteristics of BNMO thin films were investigated. The results show that the nanocrystalline BNMO thin films on p-Si substrates without and with LNO buffer layer are monoclinic phase, which have antiferroelectric-like properties. The composition and chemical state of BNMO thin films were characterized by X-ray photoelectron spectroscopy. In the whole electrical property testing process, when the BNMO/p-Si heterojunction changed into a BNMO/LNO/p-Si heterojunction, the diode behavior of a single diode changing into two tail to tail diodes was observed. The conduction mechanism and temperature stability were also discussed.

Giant Negative Electrocaloric Effect in Anti-Ferroelectric (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Ceramics.

A giant electrocaloric effect is reported in (Pb0.97La0.02)(Zr0.95Ti0.05)O3 anti-ferroelectric ceramics. These samples were fabricated by a solid-state mixed oxide technique. Dielectric analyses were employed to investigate the anti-ferroelectric (AFE) and ferroelectric (FE) phase transitions of the sample. During the heating process, the phase transition from the orthorhombic anti-ferroelectric phase (AFEO) to the tetragonal anti-ferroelectric phase (AFET) occurs at 155 °C, and the phase transition from AFET to PE occurs at 225 °C. Using the Maxwell relationship, the entropy change ΔS and adiabatic temperature change ΔT were obtained at different electric fields ranging from 40 to 65 kV/cm. The maximum adiabatic temperature change (ΔT max = -7.47 K) was obtained at 50 kV/cm, which was attributed to the field-induced phase transformation between the anti-ferroelectric and ferroelectric phases. These results showed that PLZT2/95/5 ceramics possess a large negative electrocaloric effect value, which could be applied in achieving cooling power as refrigerants.

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process.

The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially flexible HfO2 films. A novel flexible Au/HfO2/Pt/mica resistive random access memory device was prepared by a sol-gel process, and a Au/HfO2/Pt/Ti/SiO2/Si (100) device was also prepared for comparison. The HfO2 thin films were grown into the monoclinic phase by the proper annealing process at 700 °C, demonstrated by grazing-incidence X-ray diffraction patterns. The ratio of high/low resistance (off/on) reached 1000 and 50 for the two devices, respectively, being relatively stable for the former but not for the latter. The great difference in ratios for the two devices may have been caused by different concentrations of the oxygen defect obtained by the X-ray photoelectron spectroscopy spectra indicating composition and chemical state of the HfO2 thin films. The conduction mechanism was dominated by Ohm's law in the low resistance state, while in high resistance state, Ohmic conduction, space charge limited conduction (SCLC), and trap-filled SCLC conducted together.

Enhanced electrocaloric analysis and energy-storage performance of lanthanum modified lead titanate ceramics for potential solid-state refrigeration applications.

The unique properties and great variety of relaxer ferroelectrics make them highly attractive in energy-storage and solid-state refrigeration technologies. In this work, lanthanum modified lead titanate ceramics are prepared and studied. The giant electrocaloric effect in lanthanum modified lead titanate ceramics is revealed for the first time. Large refrigeration efficiency (27.4) and high adiabatic temperature change (1.67 K) are achieved by indirect analysis. Direct measurements of electrocaloric effect show that reversible adiabatic temperature change is also about 1.67 K, which exceeds many electrocaloric effect values in current direct measured electrocaloric studies. Both theoretical calculated and direct measured electrocaloric effects are in good agreements in high temperatures. Temperature and electric field related energy storage properties are also analyzed, maximum energy-storage density and energy-storage efficiency are about 0.31 J/cm3 and 91.2%, respectively.

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1-xFex)O3-δ Thin Films.

Sr(Ti1-xFex)O3-δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1-xFex)O3-δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the ferroelectric test system, and the vibrating sample magnetometer (VSM). After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3-δ thin films, with a double remanent polarization (2Pr) of 1.56, 1.95, and 9.14 µC·cm-2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10-6-10-5 A·cm-2 at an applied electric field of 100 kV·cm-1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1-xFex)O3-δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1-xFex)O3-δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1)O3-δ thin films were also discussed in detail.

Effective enzymatic in situ saccharification of bamboo shoot shell pretreated by dilute alkalic salts sodium hypochlorite/sodium sulfide pretreatment under the autoclave system.

In this study, dilute alkali salts (0.6% NaClO, 0.067% Na2S) pretreatment at 10% sulfidity under the autoclave system at 120°C for 40min was used for pretreating bamboo shoot shell (BSS). Furthermore, FT-IR, XRD and SEM were employed to characterize the changes in the cellulose structural characteristics (porosity, morphology, and crystallinity) of the pretreated BSS solid residue. After 72h, the reducing sugars and glucose from the enzymatic in situ hydrolysis of 50g/L pretreated BSS in dilute NaClO/Na2S media could be obtained at 31.11 and 20.32g/L, respectively. Finally, the obtained BSS-hydrolysates containing alkalic salt NaClO/Na2S resulted in slightly negative effects on the ethanol production. Glucose in BSS-hydrolysates was fermented from 20.0 to 0.17g/L within 48h, and an ethanol yield of 0.41g/g glucose, which represents 80.1% of the theoretical yield, was obtained. This study provided an effective strategy for potential utilization of BSS.

Sequential Aqueous Ammonia Extraction and LiCl/N,N-Dimethyl Formamide Pretreatment for Enhancing Enzymatic Saccharification of Winter Bamboo Shoot Shell.

Effective utilization of winter bamboo shoot shell (BSS) is of great interest, since BSS provides a renewable and inexpensive bioresource for the production of biofuels. In this study, an effective combination pretreatment by the sequential aqueous ammonia (25 wt%) extraction at 50 °C for 24 h and LiCl/N,N-dimethyl formamide (LiCl/DMF) (6 wt% of LiCl) pretreatment at 50 °C for 8 h was used for pretreating BSS. SEM, FTIR, and XRD results indicated that combination pretreatment could effectively remove lignin and change the crystal structure of cellulose for promoting enzymatic saccharification. Additionally, significant linear correlations were found about solid recovery-delignification (R 2 = 0.9235), delignification-reducing sugars (R 2 = 0.9552), and delignification-hemicellulose removal (R 2 = 0.9779) during the combination pretreatment. The reducing sugars and glucose from the hydrolysis of 100 g/L pretreated BSS could be obtained at 72.3 and 40.5 g/L, respectively. Using the recovered BSS-hydrolysates containing 20-50 g/L glucose as carbon source, the ethanol yields at 48 h could be obtained at 84.5-86.1% of the theoretical yield. In conclusion, the sequential ammonia extraction and LiCl/DMF pretreatment has high potential application in future.

Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO3 ceramics for dielectric tunable device application.

The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr0.7Pb0.3TiO3 (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work.