MR imaging central thalamic deep brain stimulation restored autistic-like social deficits in the rat.

BACKGROUND: Social deficit is a core symptom in autism spectrum disorder (ASD). Although deep brain stimulation (DBS) has been proposed as a potential treatment for ASD, an ideal target nucleus is yet to be identified. DBS at the central thalamic nucleus (CTN) is known to alter corticostriatal and limbic circuits, and subsequently increase the exploratory motor behaviors, cognitive performance, and skill learning in neuropsychiatric and neurodegenerative disorders. OBJECTIVE: We first investigated the ability of CTN-DBS to selectively engage distinct brain circuits and compared the spatial distribution of evoked network activity and modulation. Second, we investigated whether CTN-DBS intervention improves social interaction in a valproic acid-exposed ASD rat offspring model. METHODS: Brain regions activated through CTN-DBS by using a magnetic resonance (MR)-compatible neural probe, which is capable of inducing site-selective microstimulations during functional MRI (fMRI), were investigated. We then performed functional connectivity MRI, the three-chamber social interaction test, and Western blotting analyses to evaluate the therapeutic efficacy of CTN-DBS in an ASD rat offspring model. RESULTS: The DBS-evoked fMRI results indicated that the activated brain regions were mainly located in cortical areas, limbic-related areas, and the dorsal striatum. We observed restoration of brain functional connectivity (FC) in corticostriatal and corticolimbic circuits after CTN-DBS, accompanied with increased social interaction and decreased social avoidance in the three-chamber social interaction test. The dopamine D2 receptor decreased significantly after CTN-DBS treatment, suggesting changes in synaptic plasticity and alterations in the brain circuits. CONCLUSIONS: Applying CTN-DBS to ASD rat offspring increased FC and altered the synaptic plasticity in the corticolimbic and the corticostriatal circuits. This suggests that CTN-DBS could be an effective treatment for improving the social behaviors of individuals with ASD.

Sensor fabrication method for in situ temperature and humidity monitoring of light emitting diodes.

In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED). The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS), this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 µm-thick SS-304). The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06±0.005 (Ω/°C) and 0.033 pF/%RH, respectively.

In situ measurement of the junction temperature of light emitting diodes using a flexible micro temperature sensor.

This investigation aimed to fabricate a flexible micro resistive temperature sensor to measure the junction temperature of a light emitting diode (LED). The junction temperature is typically measured using a thermal resistance measurement approach. This approach is limited in that no standard regulates the timing of data capture. This work presents a micro temperature sensor that can measure temperature stably and continuously, and has the advantages of being lightweight and able to monitor junction temperatures in real time. Micro-electro-mechanical-systems (MEMS) technologies are employed to minimize the size of a temperature sensor that is constructed on a stainless steel foil substrate (SS-304 with 30 µm thickness). A flexible micro resistive temperature sensor can be fixed between the LED chip and the frame. The junction temperature of the LED can be measured from the linear relationship between the temperature and the resistance. The sensitivity of the micro temperature sensor is 0.059 ± 0.004 Ω/°C. The temperature of the commercial CREE(®) EZ1000 chip is 119.97 °C when it is thermally stable, as measured using the micro temperature sensor; however, it was 126.9 °C, when measured by thermal resistance measurement. The micro temperature sensor can be used to replace thermal resistance measurement and performs reliably.