Physics of large thermoelectric power factors in SnSe nanoflakes in mid-temperature range.

We have theoretically investigated the underlying physics of observed high electrical conductivity (σ), simultaneous increase of σ and Seebeck coefficient (S) with temperature, and large power factors (PFs) in nominally undoped SnSe nanoflakes sintered at different temperatures, reported recently in Mandavaet al(2022Nanotechnology33155710). Given the fact that S and σ show unusual temperature trends and that the undoped SnSe samples are highly porous and disordered, the conventional Boltzmann theory does not appear to be an appropriate model to describe their transport properties. We have, instead, used a strong disorder model based on percolation theory where charge and energy transport take place through hopping between localized states to understand these observations. Our model is able to explain the observed temperature dependence of σ and S with temperature. Large σ can be explained by a high density of localized states and a large hopping rate. The sample sintered at a higher temperature has lower disorder (σDOS) and higher hopping rate (1/τ0). We findσDOS= 0.151 eV and 1/τ0= 0.143 × 1015s-1for sample sintered at 673 K andσDOS= 0.044 eV and 1/τ0= 2.023 × 1015s-1for sample sintered at 703 K. These values are comparable to the reported values of transition frequencies, confirming that the dominant charge transport mechanism in these SnSe nanoflakes is hopping transport. Finally, we suggest that hopping transport via localized states can result in enhanced thermoelectric properties in disordered polycrystalline materials.

Quantum fluctuation effects on the ordered moments in a two dimensional frustrated ferrimagnet.

We propose a novel two-dimensional (2D) frustrated quantum spin-1/2 anisotropic Heisenberg model with alternating ferromagnetic and antiferromagnetic magnetic chains along one direction and antiferromagnetic interactions along the other. The (mean-field) ground state is ferrimagnetic in certain range of the interaction space. Spin-wave theory analysis of the reduction of ordered moments at inequivalent spin sites and the instability of the spin waves suggest a quantum phase transition which has the characteristics of both the frustrated 2D antiferromagneticS= 1/2 (J1,J2) model and 1DS1= 1,S2= 1/2 quantum ferrimagnetic model.

Coexistence and Interaction of Spinons and Magnons in an Antiferromagnet with Alternating Antiferromagnetic and Ferromagnetic Quantum Spin Chains.

In conventional quasi-one-dimensional antiferromagnets with quantum spins, magnetic excitations are carried by either magnons or spinons in different energy regimes: they do not coexist independently, nor could they interact with each other. In this Letter, by combining inelastic neutron scattering, quantum Monte Carlo simulations, and random phase approximation calculations, we report the discovery and discuss the physics of the coexistence of magnons and spinons and their interactions in Botallackite-Cu_{2}(OH)_{3}Br. This is a unique quantum antiferromagnet consisting of alternating ferromagnetic and antiferromagnetic spin-1/2 chains with weak interchain couplings. Our study presents a new paradigm where one can study the interaction between two different types of magnetic quasiparticles: magnons and spinons.

Probing the Electronic Structure of Hybrid Perovskites in the Orientationally Disordered Cubic Phase.

Hybrid organic-inorganic lead halide perovskites are projected as new generation photovoltaic and optoelectronic materials with improved efficiencies. However, their electronic structure so far remains poorly understood, particularly in the orientationally disordered cubic phase. We performed electronic structure investigations using angle-resolved photoemission spectroscopy on two prototypical samples (MAPbBr3 and MAPbCl3) in their cubic phase, and the results are compared with the calculations within two theoretical models where MA+ is orientationally (1) disordered (MA+ ion is replaced by spherically symmetric Cs+ ion) and (2) ordered (MA oriented along (100) direction) but keeping the symmetry of the unit cell cubic. Degeneracy of the valence bands and behavior of constant energy contours are consistent with model 1, which supports strongly the disordered nature of the orientation of the MA+ ions in the cubic phase. Band structure calculations also reveal that spin-orbit coupling induced Rashba splitting is suppressed by the orientational disorder.

Compositional Tailoring for Realizing High Thermoelectric Performance in Hafnium-Free n-Type ZrNiSn Half-Heusler Alloys.

Compositional tailoring enables fine-tuning of thermoelectric (TE) transport parameters by synergistic modulation of electronic and vibrational properties. In the present work, the aspects of compositionally tailored defects have been explored in ZrNiSn-based half-Heusler (HH) TE materials to achieve high TE performance and cost effectiveness in n-type Hf-free HH alloys. In off-stoichiometric Ni-rich ZrNi1+xSn alloys in a low Ni doping limit (x < 0.1), excess Ni induces defects (Ni/vacancy antisite + interstitials), which tend to cause band structure modification. In addition, the structural similarity of HH and full-Heusler (FH) compounds and formation energetics lead to an intrinsic phase segregation of FH nanoscale precipitates that are coherently dispersed within the ZrNiSn HH matrix as nanoclusters. A consonance was achieved experimentally between these two competing mechanisms for optimal HH composition having both FH precipitates and Ni/vacancy antisite defects in the HH matrix by elevating the sintering temperature up to the solubility limit range of the ZrNiSn system. Defect-mediated optimization of electrical and thermal transport via carrier concentration tuning, energy filtering, and possibly all scale-hierarchical architecture resulted in a maximum ZT ≈ 1.1 at 873 K for the optimized ZrNi1.03Sn composition. Our findings highlight the realistic prospect of enhancing TE performance via compositional engineering approach for wide applications of TE.

Spin dynamics of antiferromagnetically coupled bilayers-the case of Cr2TeO6.

Understanding the dynamics of interacting quantum spins has been one of the active areas of condensed matter physics research. Recently, extensive inelastic neutron scattering measurements have been carried out in an interesting class of systems, Cr2(Te, W, Mo)O6. These systems consist of bilayers of Cr3+ spins (S = 3/2) with strong antiferromagnetic inter-bilayer coupling (J) and tuneable intra-bilayer coupling (j) from ferro (for W and Mo) to antiferro (for Te). In the limit when [Formula: see text], the system reduces to weakly interacting quantum spin-3/2 dimers. In this paper, we discuss the low-temperature magnetic properties of Cr2TeO6 systems where both intra-layer and inter-layer exchange couplings are antiferromagnetic, i.e. [Formula: see text]. Using linear spin-wave theory we obtain the magnon dispersion, sublattice magnetization, two-magnon density of states, and longitudinal spin-spin correlation function.

Exploration of metastability and hidden phases in correlated electron crystals visualized by femtosecond optical doping and electron crystallography.

Characterizing and understanding the emergence of multiple macroscopically ordered electronic phases through subtle tuning of temperature, pressure, and chemical doping has been a long-standing central issue for complex materials research. We report the first comprehensive studies of optical doping-induced emergence of stable phases and metastable hidden phases visualized in situ by femtosecond electron crystallography. The electronic phase transitions are triggered by femtosecond infrared pulses, and a temperature-optical density phase diagram is constructed and substantiated with the dynamics of metastable states, highlighting the cooperation and competition through which the macroscopic quantum orders emerge. These results elucidate key pathways of femtosecond electronic switching phenomena and provide an important new avenue to comprehensively investigate optical doping-induced transition states and phase diagrams of complex materials with wide-ranging applications.

Spin splitting in 2D monochalcogenide semiconductors.

We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number ß-type GaS, GaSe, and InSe crystals are noncentrosymmetric. The spin splittings of the UVB and the LCB near the Γ-point in the Brillouin zone are finite, but still smaller than those in a zinc-blende semiconductor such as GaAs. On the other hand, the spin splitting is zero in centrosymmetric bulk and even-number few-layer ß-type GaS, GaSe, and InSe, owing to the constraint of spatial inversion symmetry. By contrast, GaTe exhibits zero spin splitting because it is centrosymmetric down to a single layer. In these monochalcogenide semiconductors, the separation of the non-degenerate conduction and valence bands from adjacent bands results in the suppression of Elliot-Yafet spin relaxation mechanism. Therefore, the electron- and hole-spin relaxation times in these systems with zero or minimal spin splittings are expected to exceed those in GaAs when the D'yakonov-Perel' spin relaxation mechanism is also suppressed.

Crystal growth and characterization of the narrow-band-gap semiconductors OsPn2 (Pn = P, As, Sb).

Using metal fluxes, crystals of the binary osmium dipnictides OsPn2 (Pn = P, As, Sb) have been grown for the first time. Single-crystal X-ray diffraction confirms that these compounds crystallize in the marcasite structure type with orthorhombic space group Pnnm. The structure is a three-dimensional framework of corner- and edge-sharing OsPn6 octahedra, as well as [Pn2(4-)] anions. Raman spectroscopy shows the presence of P-P single bonds, consistent with the presence of [Pn2(-4)] anions and formally Os(4+) cations. Optical-band-gap and high-temperature electrical resistivity measurements indicate that these materials are narrow-band-gap semiconductors. The experimentally determined Seebeck coefficients reveal that nominally undoped OsP2 and OsSb2 are n-type semiconductors, whereas OsAs2 is p-type. Electronic band structure using density functional theory calculations shows that these compounds are indirect narrow-band-gap semiconductors. The bonding p orbitals associated with the Pn2 dimer are below the Fermi energy, and the corresponding antibonding states are above, consistent with a Pn-Pn single bond. Thermopower calculations using Boltzmann transport theory and constant relaxation time approximation show that these materials are potentially good thermoelectrics, in agreement with experiment.

Decoupling of structural and electronic phase transitions in VO2.

Using optical, TEM, and ultrafast electron diffraction experiments we find that single crystal VO(2) microbeams gently placed on insulating substrates or metal grids exhibit different behaviors, with structural and metal-insulator transitions occurring at the same temperature for insulating substrates, while for metal substrates a new monoclinic metal phase lies between the insulating monoclinic phase and the metallic rutile phase. The structural and electronic phase transitions in these experiments are strongly first order and we discuss their origins in the context of current understanding of multiorbital splitting, strong correlation effects, and structural distortions that act cooperatively in this system.

Electronically driven fragmentation of silver nanocrystals revealed by ultrafast electron crystallography.

We report an ultrafast electron diffraction study of silver nanocrystals under surface plasmon resonance excitation, leading to a concerted fragmentation. By examining simultaneously transient structural, thermal, and Coulombic signatures of the prefragmented state, an electronically driven nonthermal fragmentation scenario is proposed.

Intermetallic compounds with near Zintl phase behavior: RE2Zn3Ge6 (RE = La, Ce, Pr, Nd) grown from liquid indium.

A series of compounds has been discovered while investigating reactions of rare earth, transition metals, and Ge in excess indium. These compounds, RE2Zn3Ge6 (RE = La, Ce, Pr, Nd), are isostructural, crystallizing in the orthorhombic space group Cmcm with lattice parameters a = 5.9691(9) angstroms, b = 24.987(4) angstroms, and c = 5.9575(9) angstroms for La2Zn3Ge6, a = 5.9503(5) angstroms, b = 24.761(2) angstroms, and c = 5.9477(5) angstroms for the Ce analogue, a =5.938(2) angstroms, b = 24.708(8) angstroms, and c = 5.936(2) angstroms for Pr2Zn3Ge6, and a = 5.9094(7) angstroms, b = 24.619(3) angstroms, and c = 5.9063(5) angstroms for the Nd analogue. The structure is composed of PbO-like ZnGe layers and ZnGe4 cage layers and is related to the Ce4Zn8Ge(11-x) structure type. The bonding in the system can be rationalized using the Zintl concept resulting in a material that is expected to be a valence precise semiconductor, although its behavior is more consistent with it being a semimetal, making it an intermediate case. The results of band structure calculations and magnetic measurements of these compounds are discussed.

V2Al5Ge5: first ternary intermetallic in the V-Al-Ge system accessible in liquid aluminium.

The intermetallic compound V2Al5Ge5 grown from Al flux is reported. V2Al5Ge5: orthorhombic, Cmcm, a = 5.4072(10), b = 12.978(2), and c = 11.362(2) A, the structure features distorted pentagonal prismatic columns defined by Al and Ge atoms. Vanadium atoms occupy the central axis of columns forming a chain with long-short alternation of V-V bonds. This compound is resistant to air oxidation up to 500 degrees C.

Intermetallics as zintl phases: Yb2Ga4Ge6 and RE3Ga4Ge6 (RE=Yb, Eu): structural response of a [Ga4Ge6]4- framework to reduction by two electrons.

Two new intermetallic compounds, Yb(2)Ga(4)Ge(6) and Yb(3)Ga(4)Ge(6), were obtained from reactions in molten Ga. A third compound, Eu(3)Ga(4)Ge(6), was produced by direct combination of the elements. The crystal structures of these compounds were studied by single-crystal X-ray diffraction. Yb(2)Ga(4)Ge(6) crystallizes in an orthorhombic cell with a=4.1698(7), b=23.254(4), c=10.7299(18) A in the polar space group Cmc2(1). The structure of RE(3)Ga(4)Ge(6) is monoclinic, space group C2/m, with cell parameters a=23.941(6), b=4.1928(11), c=10.918(3) A, beta=91.426(4) degrees for RE=Yb, and a=24.136(2), b=4.3118(4), c=11.017(1) A, beta=91.683(2) degrees for RE=Eu. The refinement [I>2 sigma(I)] converged to the final residuals R(1)/wR(2)=0.0229/0.0589, 0.0411/0.1114, and 0.0342/0.0786 for Yb(2)Ga(4)Ge(6), Yb(3)Ga(4)Ge(6), and Eu(3)Ga(4)Ge(6), respectively. The structures of these two families of compounds can be described by a Zintl concept of bonding, in which the three-dimensional [Ga(4)Ge(6)](n-) framework serves as a host and electron sink for the electropositive RE atoms. The structural relation of RE(3)Ga(4)Ge(6) to of Yb(2)Ga(4)Ge(6) lies in a monoclinic distortion of the orthorhombic cell of Yb(2)Ga(4)Ge(6) and reduction of the [Ga(4)Ge(6)] network by two electrons per formula unit. The results of theoretical calculations of the electronic structure, electrical transport data, and thermochemical and magnetic measurements are also reported.

Impressive structural diversity and polymorphism in the modular compounds ABi3Q5 (A = Rb, Cs; Q = S, Se, Te).

An outstanding example of structural diversity and complexity is found in the compounds with the general formula ABi(3)Q(5) (A = alkali metal; Q = chalcogen). gamma-RbBi(3)S(5) (I), alpha-RbBi(3)Se(5) (II), beta-RbBi(3)Se(5) (III), gamma-RbBi(3)Se(5) (IV), CsBi(3)Se(5) (V), RbBi(3)Se(4)Te (VI), and RbBi(3)Se(3)Te(2) (VII) were synthesized from A(2)Q (A = Rb, Cs; Q = S, Se) and Bi(2)Q(3) (Q = S, Se or Te) at temperatures above 650 degrees C using appropriate reaction protocols. gamma-RbBi(3)S(5) and alpha-RbBi(3)Se(5) have three-dimensional tunnel structures while the rest of the compounds have lamellar structures. gamma-RbBi(3)S(5), gamma-RbBi(3)Se(5), and its isostructural analogues RbBi(3)Se(4)Te and RbBi(3)Se(3)Te(2) crystallize in the orthorhombic space group Pnma with a = 11.744(2) A, b = 4.0519(5) A, c = 21.081(3) A, R1 = 2.9%, wR2 = 6.3% for (I), a = 21.956(7) A, b = 4.136(2) A, c = 12.357(4) A, R1 = 6.2%, wR2 = 13.5% for (IV), and a = 22.018(3) A, b = 4.2217(6) A, c = 12.614(2) A, R1 = 6.2%, wR2 = 10.3% for (VI). gamma-RbBi(3)S(5) has a three-dimensional tunnel structure that differs from the Se analogues. alpha-RbBi(3)Se(5) crystallizes in the monoclinic space group C2/m with a = 36.779(4) A, b = 4.1480(5) A, c = 25.363(3) A, beta = 120.403(2) degrees, R1 = 4.9%, wR2 = 9.9%. beta-RbBi(3)Se(5) and isostructural CsBi(3)Se(5) adopt the space group P2(1)/m with a = 13.537(2) A, b = 4.1431(6) A, c = 21.545(3) A, beta = 91.297(3) degrees, R1 = 4.9%, wR2 = 11.0% for (III) and a = 13.603(3) A, b = 4.1502(8) A, c = 21.639(4) A, beta = 91.435(3) degrees, R1 = 6.1%, wR2 = 13.4% for (V). alpha-RbBi(3)Se(5) is also three-dimensional, whereas beta-RbBi(3)Se(5) and CsBi(3)Se(5) have stepped layers with alkali metal ions found disordered in several trigonal prismatic sites between the layers. In gamma-RbBi(3)Se(5) and RbBi(3)Se(4)Te, the layers consist of Bi(2)Te(3)-type fragments, which are connected in a stepwise manner. In the mixed Se/Te analogue, the Te occupies the chalcogen sites that are on the "surface" of the layers. All compounds are narrow band-gap semiconductors with optical band gaps ranging 0.4-1.0 eV. The thermal stability of all phases was studied, and it was determined that gamma-RbBi(3)Se(5) is more stable than the and alpha- and beta-forms. Electronic band calculations at the density functional theory (DFT) level performed on alpha-, beta-, and gamma-RbBi(3)Se(5) support the presence of indirect band gaps and were used to assess their relative thermodynamic stability.