RESUMEN
In this paper, high-performance CuSCN/Si heterojunction near-infrared photodetectors were successfully prepared using nanoscale light-trapping optical structures. Various light-trapping structures of ortho-pyramids, inverted pyramids and silicon nanowires were prepared on silicon substrates. Then, CuSCN films were spin-coated on silicon substrates with high crystalline properties for the assembly of CuSCN/Si photodetectors. Their reflectance spectra and interfacial passivation properties were characterized, demonstrating their superiority of light-trapping structures in high light response. Under the irradiation of 980 nm near-infrared light, a maximum responsivity of 2.88 A W-1at -4 V bias and a specific detectivity of 5.427 × 1010Jones were obtained in the CuSCN/Si heterojunction photodetectors prepared on planner silicon due to 3.6 eV band gap of CuSCN. The substrates of the light-trapping structure were then applied to the CuSCN/Si heterojunction photodetectors. A maximum responsivity of 10.16 A W-1and a maximum specific detectivity of 1.001 × 1011Jones were achieved under the 980 nm near-infrared light irradiation and -4 V bias, demonstrating the advanced performance of CuSCN/Si heterojunction photodetectors with micro-nano light-trapping substrates in the field of near-infrared photodetection compared to other silicon-based photodetectors.
RESUMEN
The non-catalytic preparation of high-quality vertical graphene nanowalls (VGN) and graphene-based high output power hydrovoltaic effect power generation devices has always been difficult to achieve. In this work, we successfully prepared VGN with defect density, few layers and submicron domain size on a variety of substrates without catalysts through reasonable adjustment of growth conditions by the hot-wire chemical vapor deposition (HWCVD) method. The Raman test of the VGN prepared under optimal conditions showed that its ID/IG value was less than 1, and I2D/IG was more than 2.8. The deposition pressure was a key factor affecting the crystallization quality of the VGN. A suitable deposition pressure of 500 Pa could screen the active carbon clusters involved in the growth of nanowalls. The VGN prepared had excellent electrical properties and output of dropping-ion-droplet nano-power generation devices. Because of the larger crystal domain area and smaller contact angle of the VGN, the maximum output power exhibited at 100 Pa was 15.7 µW, which exceeded the value produced by other reported hydrovoltaic energy harvesting devices. All of them confirmed that VGN with improved quality had high application prospects in nano-energy devices.
