Time-resolved photoluminescence analysis of ceramic Ce:GAGG scintillators.

This paper introduces the characteristics and efficiency of post-treatment methods for enhancing the timing resolution of ceramic Ce:GAGG scintillators. The thermal annealing and surface treatments were included to analyze their impact on time-resolved photoluminescence (TRPL) and thermoluminescence (TL) characteristics. Optical properties were improved by suppressing nonradiative recombination due to the reduced surface defects, while heat-treatment removes traps as confirmed by TL measurements. TRPL decay characteristics revealed that samples treated with mechanical polishing followed by heat treatment exhibited the best scintillation performance, with a slow component of 272.3 ns. These findings will aid in developing techniques for improving the luminescence of other inorganic scintillators.

Scintillation characteristics of chemically processed Ce:GAGG single crystals.

We investigated the correlation between the surface finish and luminescence properties of chemically polished cerium-doped single-crystal Gd3Al2Ga3O12 scintillators (Ce:GAGG), from the crystallographic perspective. The intrinsic defects in the crystals were identified via photoluminescence spectroscopy followed by scanning electron microscopy and X-ray diffraction to analyze their surface morphologies. Finally, the samples were individually wrapped with an enhanced specular reflector (ESR), coupled with a photomultiplier tube, placed inside a dark box, connected to a digitizer, and irradiated with a 137Cs radioactive source to evaluate the relative light (signal) output and energy resolution of each sample. The as-cut (rough) Ce:GAGG single-crystal samples, that were chemically polished with phosphoric acid at 190°C in air for 60 min, demonstrated a 33.1% increase in signal amplitude (light output to photosensor) and 2.4% (absolute value) improvement in energy resolution, which were comparable to those obtained for the mechanically polished sample. For these samples, the surface roughness was found to be ~430 nm, which was approximately half of that of the mechanically polished sample. The chemical polishing method used in this study is a cost-effective and straightforward technique to improve structural imperfections and can facilitate the treatment of inorganic scintillators with complex shapes and/or on a large scale.

Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications.

We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 1016 cm-3 or higher; after annealing for a long time, this decreased to 1015 cm-3 or less. The arsenic-doped CdTe maintained a hole density of approximately 1016 cm-3 even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~1016 cm-3 and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments.