RESUMEN
Structural defects, including point defects, dislocation and planar defects, significantly affect the physical and chemical properties of low-dimensional materials, such as layered compounds. In particular, inversion domain boundary is an intrinsic defect surrounded by a 60° grain boundary, which significantly influences electronic transport properties. We study atomic structures of the inversion domain grain boundaries (IDBs) in layered transition metal dichalcogenides (MoSe2 and MoS2) obtained by an exfoliation method, based on the aberration-corrected scanning transmission electron microscopy observation and density functional theory (DFT) calculation. The atomic-scale observation shows that the grain boundaries consist of two different types of 4-fold ring point shared and 8-fold ring edge shared chains. The results of DFT calculations indicate that the inversion domain grain boundary behaves as a metallic one-dimensional chain embedded in the semiconducting MoSe2 matrix with the occurrence of a new state within the band gap.
RESUMEN
Novel ultrathin Li(2)MnSiO(4) nanosheets have been prepared in a rapid one pot supercritical fluid synthesis method. Nanosheets structured cathode material exhibits a discharge capacity of ~340 mAh/g at 45 ± 5 °C. This result shows two lithium extraction/insertion performances with good cycle ability without any structural instability up to 20 cycles. The two-dimensional nanosheets structure enables us to overcome structural instability problem in the lithium metal silicate based cathode materials and allows successful insertion/extraction of two complete lithium ions.
