Origin of the Giant Enhanced Raman Scattering by Sulfur Chains Encapsulated inside Single-Wall Carbon Nanotubes.

In this work, we explain the origin and the mechanism responsible for the strong enhancement of the Raman signal of sulfur chains encapsulated by single-wall carbon nanotubes by running resonance Raman measurements in a wide range of excitation energies for two nanotube samples with different diameter distributions. The Raman signal associated with the vibrational modes of the sulfur chain is observed when it is confined by small-diameter metallic nanotubes. Moreover, a strong enhancement of the Raman signal is observed for excitation energies corresponding to the formation of excited nanotube-chain-hybrid electronic states. Our hypothesis was further tested by high pressure Raman measurements and confirmed by density functional theory calculations of the electronic density of states of hybrid systems formed by sulfur chains encapsulated by different types of single-wall carbon nanotubes.

Topologically Protected Metallic States Induced by a One-Dimensional Extended Defect in the Bulk of a 2D Topological Insulator.

We report ab initio calculations showing that a one-dimensional extended defect generates topologically protected metallic states immersed in the bulk of two-dimensional topological insulators. We find that a narrow extended defect, composed of periodic units consisting of one octagonal and two pentagonal rings (a 558 extended defect), embedded in the hexagonal bulk of a bismuth bilayer, introduces two pairs of one-dimensional counterpropagating helical-Fermion electronic bands with the opposite spin-momentum locking characteristic of the topological metallic states that appear at the edges in two-dimensional topological insulators. Each one of these pairs of helical-Fermion bands is localized, respectively, along each one of the zigzag chains of bismuth atoms at the core of the 558 extended defect, and their hybridization leads to the opening of very small gaps (6 meV or less) in the helical-Fermion dispersions of these defect-related modes. We discuss the connection between the defect-induced metallic modes and the helical-Fermion edge states that occur on bismuth bilayer ribbons.

Lattice relaxation at the interface of two-dimensional crystals: graphene and hexagonal boron-nitride.

Heteroepitaxy of two-dimensional (2D) crystals, such as hexagonal boron nitride (BN) on graphene (G), can occur at the edge of an existing heterointerface. Understanding strain relaxation at such 2D laterally fused interface is useful in fabricating heterointerfaces with a high degree of atomic coherency and structural stability. We use in situ scanning tunneling microscopy to study the 2D heteroepitaxy of BN on graphene edges on a Ru(0001) surface with the aim of understanding the propagation of interfacial strain. We found that defect-free, pseudomorphic growth of BN on a graphene edge "substrate" occurs only for a short distance (<1.29 nm) perpendicular to the interface, beyond which misfit zero-dimensional dislocations occur to reduce the elastic strain energy. Boundary states originating from a coherent zigzag-linked G/BN boundary are observed to greatly enhance the local conductivity, thus affording a new avenue to construct one-dimensional transport channels in G/BN hybrid interface.