RESUMEN
Surface acoustic wave (SAW) can carry phononic angular momentum, showing great potential as an energy-efficient way to control magnetism. Still, out-of-plane phononic angular momentum in SAW and its interaction with magnetism remain elusive. Here, we studied the SAW-induced magnetoacoustic waves and spin pumping in Ni-based films on LiNbO3 with selected SAW propagation direction. The crystal inversion asymmetry induces circularly polarized phonons with large out-of-plane angular momenta so that up to 60% of the SAW power attenuates nonreciprocally controlled by the out-of-plane magnetization component. The SAW propagation direction dependence of the nonreciprocity verifies the crystal origin of the phononic angular momentum, and a chiral spin pumping demonstrates that the circular polarization can control the spin current generation efficiency. These results provide an additional degree of freedom for the acoustic control of magnetism and open an avenue for applying circularly polarized phonons.
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Antiferromagnets (AFMs) have the natural advantages of terahertz spin dynamics and negligible stray fields, thus appealing for use in domain-wall applications. However, their insensitive magneto-electric responses make controlling them in domain-wall devices challenging. Recent research on noncollinear chiral AFMs Mn3X (X = Sn, Ge) enabled us to detect and manipulate their magnetic octupole domain states. Here, we demonstrate a current-driven fast magnetic octupole domain-wall (MODW) motion in Mn3X. The magneto-optical Kerr observation reveals the Néel-like MODW of Mn3Ge can be accelerated up to 750 m s-1 with a current density of only 7.56 × 1010 A m-2 without external magnetic fields. The MODWs show extremely high mobility with a small critical current density. We theoretically extend the spin-torque phenomenology for domain-wall dynamics from collinear to noncollinear magnetic systems. Our study opens a new route for antiferromagnetic domain-wall-based applications.
RESUMEN
The antiferromagnetic Weyl semimetal Mn_{3}Sn has attracted wide attention due to its vast anomalous transverse transport properties despite barely any net magnetization. So far, the magnetic properties of Mn_{3}Sn have been experimentally investigated on micrometer scale samples but not in nanometers. In this study, we measured the local anomalous Nernst effect of a (0001)-textured Mn_{3}Sn nanowire using a tip-contact-induced temperature gradient with an atomic force microscope. Our approach directly maps the distribution of the cluster magnetic octupole moments with 80 nm spatial resolution, providing crucial information for integrating the Mn_{3}Sn nanostructure into spintronic devices.
RESUMEN
Magnonicsis a research field that has gained an increasing interest in both the fundamental and applied sciences in recent years. This field aims to explore and functionalize collective spin excitations in magnetically ordered materials for modern information technologies, sensing applications and advanced computational schemes. Spin waves, also known as magnons, carry spin angular momenta that allow for the transmission, storage and processing of information without moving charges. In integrated circuits, magnons enable on-chip data processing at ultrahigh frequencies without the Joule heating, which currently limits clock frequencies in conventional data processors to a few GHz. Recent developments in the field indicate that functional magnonic building blocks for in-memory computation, neural networks and Ising machines are within reach. At the same time, the miniaturization of magnonic circuits advances continuously as the synergy of materials science, electrical engineering and nanotechnology allows for novel on-chip excitation and detection schemes. Such circuits can already enable magnon wavelengths of 50 nm at microwave frequencies in a 5G frequency band. Research into non-charge-based technologies is urgently needed in view of the rapid growth of machine learning and artificial intelligence applications, which consume substantial energy when implemented on conventional data processing units. In its first part, the 2024 Magnonics Roadmap provides an update on the recent developments and achievements in the field of nano-magnonics while defining its future avenues and challenges. In its second part, the Roadmap addresses the rapidly growing research endeavors on hybrid structures and magnonics-enabled quantum engineering. We anticipate that these directions will continue to attract researchers to the field and, in addition to showcasing intriguing science, will enable unprecedented functionalities that enhance the efficiency of alternative information technologies and computational schemes.
RESUMEN
Here, we report the observation of strong coupling between magnons and surface acoustic wave (SAW) phonons in a thin CoFeB film constructed in an on-chip SAW resonator by analyzing SAW phonon dispersion anticrossings. We employ a nanostructured SAW resonator design that, in contrast to conventional SAW resonators, allows us to enhance shear-horizontal strain. Crucially, this type of strain couples strongly to magnons. Our device design provides the tunability of the film thickness with a fixed phonon wavelength, which is a departure from the conventional approach in strong magnon-phonon coupling research. We detect a monotonic increase in the coupling strength by expanding the film thickness, which agrees with our theoretical model. Our work offers a significant way to advance fundamental research and the development of devices based on magnon-phonon hybrid quasiparticles.
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Harnessing the causal relationships between mechanical and magnetic properties of Van der Waals materials presents a wealth of untapped opportunity for scientific and technological advancement, from precision sensing to novel memories. This can, however, only be exploited if the means exist to efficiently interface with the magnetoelastic interaction. Here, we demonstrate acoustically driven spin-wave resonance in a crystalline antiferromagnet, chromium trichloride, via surface acoustic wave irradiation. The resulting magnon-phonon coupling is found to depend strongly on sample temperature and external magnetic field orientation, and displays a high sensitivity to extremely weak magnetic anisotropy fields in the few mT range. Our work demonstrates a natural pairing between power-efficient strain-wave technology and the excellent mechanical properties of Van der Waals materials, representing a foothold toward widespread future adoption of dynamic magnetoacoustics.
RESUMEN
Phonons and magnons are engineered by periodic potential landscapes in phononic and magnonic crystals, and their combined studies may enable valley phonon transport tunable by the magnetic field. Through nonreciprocal surface acoustic wave transmission, we demonstrate valley-selective phonon-magnon scattering in magnetoelastic superlattices. The lattice symmetry and the out-of-plane magnetization component control the sign of nonreciprocity. The phonons in the valleys play a crucial role in generating nonreciprocal transmission by inducing circularly polarized strains that couple with the magnons. The transmission spectra show a nonreciprocity peak near a transmission gap, matching the phononic band structure. Our results open the way for manipulating valley phonon transport through periodically varying magnon-phonon coupling.
RESUMEN
Magnetic damping controls the performance and operational speed of many spintronics devices. Being a tensor quantity, the damping in magnetic thin films often shows anisotropic behavior with the magnetization orientation. Here, we have studied the anisotropy of damping in Ta/CoFeB/MgO heterostructures, deposited on thermally oxidized Si substrates, as a function of the orientation of magnetization. By performing ferromagnetic resonance (FMR) measurements based on spin pumping and inverse spin Hall effect (ISHE), we extract the damping parameter in those films and find that the anisotropy of damping contains four-fold and two-fold anisotropy terms. We infer that four-fold anisotropy originates from two-magnon scattering (TMS). By studying reference Ta/CoFeB/MgO films, deposited on LiNbO3 substrates, we find that the two-fold anisotropy is correlated with in-plane magnetic anisotropy (IMA) of the films, suggesting its origin as the anisotropy in bulk spin-orbit coupling (SOC) of CoFeB film. We conclude that when IMA is very small, it's correlation with two-fold anisotropy cannot be experimentally identified. However, as IMA increases, it starts to show a correlation with two-fold anisotropy in damping. These results will be beneficial for designing future spintronics devices.
RESUMEN
Excitation of magnetization dynamics in magnetic materials, especially in ultrathin ferromagnetic films, is of utmost importance for developing various ultrafast spintronics devices. Recently, the excitation of magnetization dynamics, i.e. ferromagnetic resonance (FMR) via electric field-induced modulation of interfacial magnetic anisotropies, has received particular attention due to several advantages, including lower power consumption. However, several additional torques generated by unavoidable microwave current induced because of the capacitive nature of the junctions may also contribute to the excitation of FMR apart from electric field-induced torques. Here, we study the FMR signals excited by applying microwave signal across the metal-oxide junction in CoFeB/MgO heterostructures with Pt and Ta buffer layers. Analysis of the resonance line shape and angular dependent behavior of resonance amplitude revealed that apart from voltage-controlled in-plane magnetic anisotropy (VC-IMA) torque a significant contribution can also arises from spin-torques and Oersted field torques originating from the flow of microwave current through metal-oxide junction. Surprisingly, the overall contribution from spin-torques and Oersted field torques are comparable to the VC-IMA torque contribution, even for a device with negligible defects. This study will be beneficial for designing future electric field-controlled spintronics devices.
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Reconfigurable magnonics have attracted intense interest due to their myriad advantages including energy efficiency, easy tunability and miniaturization of on-chip data communication and processing devices. Here, we demonstrate efficient reconfigurability of spin-wave (SW) dynamics as well as SW avoided crossing by varying bias magnetic field orientation in triangular shaped Ni80Fe20nanodot arrays. In particular, for a range of in-plane angles of bias field, we achieve mutual coherence between two lower frequency modes leading to a drastic modification in the ferromagnetic resonance frequency. Significant modification in magnetic stray field distribution is observed at the avoided crossing regime due to anisotropic dipolar interaction between two neighbouring dots. Furthermore, using micromagnetic simulations we demonstrate that the hybrid SW modes propagate longer through an array as opposed to the non-interacting modes present in this system, indicating the possibility of coherent energy transfer of hybrid magnon modes. This result paves the way for the development of integrated on-chip magnonic devices operating in the gigahertz frequency regime.
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Nonlinear phenomena in physical systems can be used for brain-inspired computing with low energy consumption. Response from the dynamics of a topological spin structure called skyrmion is one of the candidates for such a neuromorphic computing. However, its ability has not been well explored experimentally. Here, we experimentally demonstrate neuromorphic computing using nonlinear response originating from magnetic field-induced dynamics of skyrmions. We designed a simple-structured skyrmion-based neuromorphic device and succeeded in handwritten digit recognition with the accuracy as large as 94.7% and waveform recognition. Notably, there exists a positive correlation between the recognition accuracy and the number of skyrmions in the devices. The large degrees of freedom of skyrmion systems, such as the position and the size, originate from the more complex nonlinear mapping, the larger output dimension, and, thus, high accuracy. Our results provide a guideline for developing energy-saving and high-performance skyrmion neuromorphic computing devices.
RESUMEN
Electrical control of a magnetic state of matter lays the foundation for information technologies and for understanding of spintronic phenomena. Spin-orbit torque provides an efficient mechanism for the electrical manipulation of magnetic orders1-11. In particular, spin-orbit torque switching of perpendicular magnetization in nanoscale ferromagnetic bits has enabled the development of stable, reliable and low-power memories and computation12-14. Likewise, for antiferromagnetic spintronics, electrical bidirectional switching of an antiferromagnetic order in a perpendicular geometry may have huge impacts, given its potential advantage for high-density integration and ultrafast operation15,16. Here we report the experimental realization of perpendicular and full spin-orbit torque switching of an antiferromagnetic binary state. We use the chiral antiferromagnet Mn3Sn (ref. 17), which exhibits the magnetization-free anomalous Hall effect owing to a ferroic order of a cluster magnetic octupole hosted in its chiral antiferromagnetic state18. We fabricate heavy-metal/Mn3Sn heterostructures by molecular beam epitaxy and introduce perpendicular magnetic anisotropy of the octupole using an epitaxial in-plane tensile strain. By using the anomalous Hall effect as the readout, we demonstrate 100 per cent switching of the perpendicular octupole polarization in a 30-nanometre-thick Mn3Sn film with a small critical current density of less than 15 megaamperes per square centimetre. Our theory reveals that the perpendicular geometry between the polarization directions of current-induced spin accumulation and of the octupole persistently maximizes the spin-orbit torque efficiency during the deterministic bidirectional switching process. Our work provides a significant basis for antiferromagnetic spintronics.
RESUMEN
Chirality-induced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from current-induced spin polarization in molecules. The current-induced spin polarization is widely recognized as a fundamental principle of chiral-induced spin selectivity (CISS). In this study, we investigate chirality-induced current-in-plane magnetoresistance (CIP-MR) in a chiral molecule/ferromagnetic metal bilayer at room temperature. In contrast to CPP-MR, CIP-MR observed in the present study requires no bias charge current through the molecule. The temperature dependence of CIP-MR suggests that thermally driven spontaneous spin polarization in chiral molecules is the key to the observed MR. The novel MR is consistent with recent CISS-related studies, that is, chiral molecules in contact with a metallic surface possess a finite spin polarization.
RESUMEN
Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn3Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn3Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.
RESUMEN
We report here an experimental observation of dynamic dipolar coupling induced magnon-magnon coupling and spin wave (SW) mode splitting in Ni80Fe20cross-shaped nanoring array. Remarkably, we observe an anticrossing feature with minimum frequency gap of 0.96 GHz and the corresponding high cooperativity value of 2.25. Interestingly, splitting of the highest frequency SW mode occurs due to the anisotropic dipolar interactions between the cross nanorings. Furthermore, using micromagnetic simulations we demonstrate that the coupled SW modes propagate longer as opposed to other modes present in this system. Our work paves the way towards integrated hybrid systems-based quantum magnonics and on-chip coherent information transfer.
RESUMEN
Development of energy-efficient on-demand magnonic nanochannels (MNCs) can revolutionize on-chip data communication and processing. We have developed a dynamic MNC array by periodically tailoring perpendicular magnetic anisotropy using the electric field. Brillouin light scattering spectroscopy is used to probe the spin wave (SW) dispersion of MNCs formed by applying a static electric field at the CoFeB/MgO interface through the one-dimensional stripe-like array of indium tin oxide electrodes placed on top of Ta/CoFeB/MgO/Al2O3 heterostructures. Magnonic bands, consisting of two SW frequency modes, appear with a bandgap under the application of moderate gate voltage, which can be switched off by withdrawing the voltage. The experimental results are reproduced by plane wave method-based numerical calculations, and simulated SW mode profiles show propagating SWs through nanochannels with different magnetic properties. The anticrossing between these two modes gives rise to the observed magnonic bandgap.
RESUMEN
An inductor, one of the most fundamental circuit elements in modern electronic devices, generates a voltage proportional to the time derivative of the input current1. Conventional inductors typically consist of a helical coil and induce a voltage as a counteraction to time-varying magnetic flux penetrating the coil, following Faraday's law of electromagnetic induction. The magnitude of this conventional inductance is proportional to the volume of the inductor's coil, which hinders the miniaturization of inductors2. Here, we demonstrate an inductance of quantum-mechanical origin3, generated by the emergent electric field induced by current-driven dynamics of spin helices in a magnet. In microscale rectangular magnetic devices with nanoscale spin helices, we observe a typical inductance as large as -400 nanohenry, comparable in magnitude to that of a commercial inductor, but in a volume about a million times smaller. The observed inductance is enhanced by nonlinearity in current and shows non-monotonous frequency dependence, both of which result from the current-driven dynamics of the spin-helix structures. The magnitude of the inductance rapidly increases with decreasing device cross-section, in contrast to conventional inductors. Our findings may pave the way to microscale, simple-shaped inductors based on emergent electromagnetism related to the quantum-mechanical Berry phase.
RESUMEN
A fundamental form of magnon-phonon interaction is an intrinsic property of magnetic materials, the "magnetoelastic coupling." This form of interaction has been the basis for describing magnetostrictive materials and their applications, where strain induces changes of internal magnetic fields. Different from the magnetoelastic coupling, more than 40 years ago, it was proposed that surface acoustic waves may induce surface magnons via rotational motion of the lattice in anisotropic magnets. However, a signature of this magnon-phonon coupling mechanism, termed magneto-rotation coupling, has been elusive. Here, we report the first observation and theoretical framework of the magneto-rotation coupling in a perpendicularly anisotropic film Ta/CoFeB(1.6 nanometers)/MgO, which consequently induces nonreciprocal acoustic wave attenuation with an unprecedented ratio of up to 100% rectification at a theoretically predicted optimized condition. Our work not only experimentally demonstrates a fundamentally new path for investigating magnon-phonon coupling but also justifies the feasibility of the magneto-rotation coupling application.
RESUMEN
Voltage-controlled magnetic anisotropy (VCMA), observed at the interfaces of ultrathin ferromagnetic metallic films and oxide layer, has proven to be a useful tool for the development of all-electric field controlled spintronics devices. Here, we have studied the symmetric and asymmetric behavior of VCMA in CoFeB/MgO heterostructures, grown on different underlayer materials, by measuring ferromagnetic resonance using spin pumping and inverse spin Hall effect technique. We observe symmetric behavior of VCMA in CoFeB films with Ta underlayer, whereas a systematic transformation from symmetric to asymmetric behavior of VCMA with decreasing CoFeB thickness is observed for Pt underlayer. We speculate that the increased interfacial roughness, defects and strain of ultrathin CoFeB films with Pt buffer layer probably leads to the complicated band structure at CoFeB/MgO interface resulting in asymmetric behavior of VCMA. The observed symmetric behavior of VCMA in control samples justifies the role of interfacial roughness, defects and discards the role of oxide overlayer on the observed asymmetric behavior of VCMA in ultrathin CoFeB films.
RESUMEN
Electrical manipulation of phenomena generated by nontrivial band topology is essential for the development of next-generation technology using topological protection. A Weyl semimetal is a three-dimensional gapless system that hosts Weyl fermions as low-energy quasiparticles1-4. It has various exotic properties, such as a large anomalous Hall effect (AHE) and chiral anomaly, which are robust owing to the topologically protected Weyl nodes1-16. To manipulate such phenomena, a magnetic version of Weyl semimetals would be useful for controlling the locations of Weyl nodes in the Brillouin zone. Moreover, electrical manipulation of antiferromagnetic Weyl metals would facilitate the use of antiferromagnetic spintronics to realize high-density devices with ultrafast operation17,18. However, electrical control of a Weyl metal has not yet been reported. Here we demonstrate the electrical switching of a topological antiferromagnetic state and its detection by the AHE at room temperature in a polycrystalline thin film19 of the antiferromagnetic Weyl metal Mn3Sn9,10,12,20, which exhibits zero-field AHE. Using bilayer devices composed of Mn3Sn and nonmagnetic metals, we find that an electrical current density of about 1010 to 1011 amperes per square metre induces magnetic switching in the nonmagnetic metals, with a large change in Hall voltage. In addition, the current polarity along the bias field and the sign of the spin Hall angle of the nonmagnetic metals-positive for Pt (ref. 21), close to 0 for Cu and negative for W (ref. 22)-determines the sign of the Hall voltage. Notably, the electrical switching in the antiferromagnet is achieved with the same protocol as that used for ferromagnetic metals23,24. Our results may lead to further scientific and technological advances in topological magnetism and antiferromagnetic spintronics.