High resolution coherent population trapping on a single hole spin in a semiconductor quantum dot.

We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physicslike dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify the cause of this process as charge noise by, first, demonstrating that the hole spin g factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.

Fine tuning of micropillar cavity modes through repetitive oxidations.

Repetitive wet thermal oxidations of a tapered oxide aperture in a micropillar structure are demonstrated. After each oxidation step the confined optical modes are analyzed at room temperature. Three regimes are identified. First, the optical confinement increases when the aperture oxidizes toward the center. Then, the cavity modes shift by more than 30 nm when the taper starts to oxidize through the center, leading to a decrease in the optical path length. Finally, the resonance frequency levels off when the aperture is oxidized all the way through the micropillar, but confined optical modes with a high quality factor remain. This repetitive oxidation technique therefore enables precise control of the optical cavity volume or wavelength.

Optical modes in oxide-apertured micropillar cavities.

We present a detailed experimental characterization of the spectral and spatial structure of the confined optical modes for oxide-apertured micropillar cavities, showing good-quality Hermite-Gaussian profiles, easily mode-matched to external fields. We further derive a relation between the frequency splitting of the transverse modes and the expected Purcell factor. Finally, we describe a technique to retrieve the profile of the confining refractive index distribution from the spatial profiles of the modes.

H1 photonic crystal cavities for hybrid quantum information protocols.

Hybrid quantum information protocols are based on local qubits, such as trapped atoms, NV centers, and quantum dots, coupled to photons. The coupling is achieved through optical cavities. Here we demonstrate far-field optimized H1 photonic crystal membrane cavities combined with an additional back reflection mirror below the membrane that meet the optical requirements for implementing hybrid quantum information protocols. Using numerical optimization we find that 80% of the light can be radiated within an objective numerical aperture of 0.8, and the coupling to a single-mode fiber can be as high as 92%. We experimentally prove the unique external mode matching properties by resonant reflection spectroscopy with a cavity mode visibility above 50%.

Electro-elastic tuning of single particles in individual self-assembled quantum dots.

We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (≈-0.22 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 µeV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitting energies is also measured. We exploit the variable exciton response to tune multiple quantum dots on the same chip into resonance.

Surface acoustic wave mediated carrier injection into individual quantum post nano emitters.

Acousto-electric charge conveyance induced by a surface acoustic wave (SAW) is employed to dissociate photogenerated excitons. Over macroscopic distances, both electrons and holes are injected sequentially into a remotely positioned, isolated and high quality quantum emitter, a self-assembled quantum post. This process is found to be highly efficient and to exhibit improved stability at high acoustic powers when compared to direct optical pumping at the position of the quantum post. These characteristics are attributed to the wide matrix quantum well in which charge conveyance occurs and to the larger number of carriers available for injection in the remote configuration, respectively. The emission of such pumped quantum posts is dominated by recombination of neutral excitons and fully directional when the propagation direction of the SAW and the position of the quantum post are reversed.

Ultrafast photon-photon interaction in a strongly coupled quantum dot-cavity system.

We study dynamics of the interaction between two weak light beams mediated by a strongly coupled quantum dot-photonic crystal cavity system. First, we perform all-optical switching of a weak continuous-wave signal with a pulsed control beam, and then perform switching between two weak pulsed beams (40 ps pulses). Our results show that the quantum dot-nanocavity system enables fast, controllable optical switching at the single-photon level.

Terahertz ionization of highly charged quantum posts in a perforated electron gas.

"Quantum posts" are roughly cylindrical semiconductor nanostructures that are embedded in an energetically shallower "matrix" quantum well of comparable thickness. We report measurements of voltage-controlled charging and terahertz absorption of 30 nm thick InGaAs quantum wells and posts. Under flat-band (zero-electric field) conditions, the quantum posts each contain approximately six electrons, and an additional ~2.4 × 10(11) cm(-2) electrons populate the quantum well matrix. In this regime, absorption spectra show peaks at 3.5 and 4.8 THz (14 and 19 meV) whose relative amplitude depends strongly on temperature. These peaks are assigned to intersubband transitions of electrons in the quantum well matrix. A third, broader feature has a temperature-independent amplitude and is assigned to an absorption involving quantum posts. Eight-band k·p calculations incorporating the effects of strain and Coulomb repulsion predict that the electrons in the posts strongly repel the electrons in the quantum well matrix, "perforating" the electron gas. The strongest calculated transition, which has a frequency close to the center of the quantum post related absorption at 5 THz (20 meV), is an ionizing transition from a filled state to a quasi-bound state that can easily scatter to empty states in the quantum well matrix.

Semiconductor self-assembled quantum dots: present status and future trends.

Progress in controlling the size, shape, and composition of quantum dots (QDs) as well as their positioning will be crucial to further advances in the fields of quantum information and device applications. The growth of QDs into lattices using controlled positioning of the QD nucleation centers is a possible method. QD positioning is also much needed for further development of QD microcavities and photonic-crystal based devices that are used for quantum information applications. This article discusses the prospects for progress in these fields that may be realized if a better control over the positioning and self-positioning of quantum dots is achieved.

Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves.

Individual self-assembled quantum dots and quantum posts are studied under the influence of a surface acoustic wave. In optical experiments we observe an acoustically induced switching of the occupancy of the nanostructures along with an overall increase of the emission intensity. For quantum posts, switching occurs continuously from predominantly charged excitons (dissimilar number of electrons and holes) to neutral excitons (same number of electrons and holes) and is independent of whether the surface acoustic wave amplitude is increased or decreased. For quantum dots, switching is nonmonotonic and shows a pronounced hysteresis on the amplitude sweep direction. Moreover, emission of positively charged and neutral excitons is observed at high surface acoustic wave amplitudes. These findings are explained by carrier trapping and localization in the thin and disordered two-dimensional wetting layer on top of which quantum dots nucleate. This limitation can be overcome for quantum posts where acoustically induced charge transport is highly efficient in a wide lateral matrix-quantum well.

Fast electrical control of a quantum dot strongly coupled to a photonic-crystal cavity.

The resonance frequency of an InAs quantum dot strongly coupled to a GaAs photonic-crystal cavity was electrically controlled via the quadratic quantum confined Stark effect. Stark shifts up to 0.3 meV were achieved using a lateral Schottky electrode that created a local depletion region at the location of the quantum dot. We report switching of a probe laser coherently coupled to the cavity up to speeds as high as 150 MHz, limited by the RC constant of the transmission line. The coupling strength g and the magnitude of the Stark shift with electric field were investigated while coherently probing the system.

Resonant excitation of a quantum dot strongly coupled to a photonic crystal nanocavity.

We describe the resonant excitation of a single quantum dot that is strongly coupled to a photonic crystal nanocavity. The cavity represents a spectral window for resonantly probing the optical transitions of the quantum dot. We observe narrow absorption lines attributed to the single and biexcition quantum dot transitions and measure antibunched population of the detuned cavity mode [g{(2)}(0)=0.19].

A coherent single-hole spin in a semiconductor.

Semiconductors have uniquely attractive properties for electronics and photonics. However, it has been difficult to find a highly coherent quantum state in a semiconductor for applications in quantum sensing and quantum information processing. We report coherent population trapping, an optical quantum interference effect, on a single hole. The results demonstrate that a hole spin in a quantum dot is highly coherent.

Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.

We report on magneto-photoluminescence studies of InAs/GaAs quantum dots (QDs) of considerably different densities, from dense ensembles down to individual dots. It is found that a magnetic field applied in Faraday geometry decreases the photoluminescence (PL) intensity of QD ensembles, which is not accompanied by the corresponding increase of PL signal of the wetting layer on which QDs are grown. The model suggested to explain these data assumes considerably different strengths of suppression of electron and hole fluxes by a magnetic field. This idea has been successfully checked in experiments on individual QDs, where the PL spectra allow to directly monitor the charge state of a QD and, hence, to conclude about relative magnitudes of electron and hole fluxes toward the QD. Comparative studies of different individual QDs have revealed that the internal electric field in the sample (which was altered in the experiments in a controllable way) together with an external magnetic field will determine the charge state and emission intensity of the QDs.

An optical modulator based on a single strongly coupled quantum dot--cavity system in a p-i-n junction.

We demonstrate an optical modulator based on a single quantum dot strongly coupled to a photonic crystal cavity. A vertical p-i-n junction is used to tune the quantum dot and thereby modulate the cavity transmission, with a measured instrument-limited response time of 13 ns. A modulator based on a single quantum dot promises operation at high bandwidth and low power.

Dipole induced transparency in waveguide coupled photonic crystal cavities.

We demonstrate dipole induced transparency in an integrated photonic crystal device. We show that a single weakly coupled quantum dot can control the transmission of photons through a photonic crystal cavity that is coupled to waveguides on the chip. Control over the quantum dot and cavity resonance via local temperature tuning, as well as efficient out-coupling with an integrated grating structure is demonstrated.

Optical detection of single-electron spin resonance in a quantum dot.

We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin with a laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few microT. In one case, the spin resonance behaves as a driven 3-level lambda system with weak damping; in another one, the dot exhibits remarkably strong (67% signal recovery) and narrow (0.34 MHz) spin resonances with fluctuating resonant positions, evidence of unusual dynamic processes.

A semiconductor exciton memory cell based on a single quantum nanostructure.

We demonstrate storage of excitons in a single nanostructure, a self-assembled quantum post. After generation, electrons and holes forming the excitons are separated by an electric field toward opposite ends of the quantum post inhibiting their radiative recombination. After a defined time, the spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the quantum post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.

Controlled phase shifts with a single quantum dot.

Optical nonlinearities enable photon-photon interaction and lie at the heart of several proposals for quantum information processing, quantum nondemolition measurements of photons, and optical signal processing. To date, the largest nonlinearities have been realized with single atoms and atomic ensembles. We show that a single quantum dot coupled to a photonic crystal nanocavity can facilitate controlled phase and amplitude modulation between two modes of light at the single-photon level. At larger control powers, we observed phase shifts up to pi/4 and amplitude modulation up to 50%. This was accomplished by varying the photon number in the control beam at a wavelength that was the same as that of the signal, or at a wavelength that was detuned by several quantum dot linewidths from the signal. Our results present a step toward quantum logic devices and quantum nondemolition measurements on a chip.

Optical pumping of a single hole spin in a quantum dot.

The spin of an electron is a natural two-level system for realizing a quantum bit in the solid state. For an electron trapped in a semiconductor quantum dot, strong quantum confinement highly suppresses the detrimental effect of phonon-related spin relaxation. However, this advantage is offset by the hyperfine interaction between the electron spin and the 10(4) to 10(6) spins of the host nuclei in the quantum dot. Random fluctuations in the nuclear spin ensemble lead to fast spin decoherence in about ten nanoseconds. Spin-echo techniques have been used to mitigate the hyperfine interaction, but completely cancelling the effect is more attractive. In principle, polarizing all the nuclear spins can achieve this but is very difficult to realize in practice. Exploring materials with zero-spin nuclei is another option, and carbon nanotubes, graphene quantum dots and silicon have been proposed. An alternative is to use a semiconductor hole. Unlike an electron, a valence hole in a quantum dot has an atomic p orbital which conveniently goes to zero at the location of all the nuclei, massively suppressing the interaction with the nuclear spins. Furthermore, in a quantum dot with strong strain and strong quantization, the heavy hole with spin-3/2 behaves as a spin-1/2 system and spin decoherence mechanisms are weak. We demonstrate here high fidelity (about 99 per cent) initialization of a single hole spin confined to a self-assembled quantum dot by optical pumping. Our scheme works even at zero magnetic field, demonstrating a negligible hole spin hyperfine interaction. We determine a hole spin relaxation time at low field of about one millisecond. These results suggest a route to the realization of solid-state quantum networks that can intra-convert the spin state with the polarization of a photon.