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This paper presents the development of the UPMSat-2 sun sensor, from the design to on-orbit operation. It also includes the testing of the instrument, one of the most important tasks that needs to be performed to operate a sensor with precision. The UPMSat-2 solar sensor has been designed, tested, and manufactured at the Universidad Politécnica de Madrid (UPM) using 3D printing and COTS (photodiodes). The work described in this paper was carried out by students and teachers of the Master in Space Systems (Máster Universitario en Sistemas Espaciales-MUSE). The solar sensor is composed of six photodiodes that are divided into two sets; each set is held and oriented on the satellite by its corresponding support printed in Delrin. The paper describes the choice of components, the electrical diagram, and the manufacture of the supports. The methodology followed to obtain the response curve of each photodiode is simple and inexpensive, as it requires a limited number of instruments and tools. The selected irradiance source was a set of red LEDs and halogen instead of an AM0 spectrum irradiance simulator. Some early results from the UPMSat-2 mission have been analyzed in the present paper. Data from magnetometers and the attitude control system have been used to validate the data obtained from the sun sensor. The results indicate a good performance of the sensors during flight, in accordance with the data from the ground tests.
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Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO2/Ga2O3 complex nanostructures. Ga2O3 nanowires decorated with either crossing SnO2 nanowires or SnO2 particles have been obtained in a single step treatment by thermal evaporation. The reason for this dual behavior is related to the growth direction of trunk Ga2O3 nanowires. Ga2O3 nanowires grown along the [001] direction favor the formation of crossing SnO2 nanowires. Alternatively, SnO2 forms rhombohedral particles on [110] Ga2O3 nanowires leading to skewer-like structures. These complex oxide structures were grown by a catalyst-free vapor-solid process. When pure Ga and tin oxide were used as source materials and compacted powders of Ga2O3 acted as substrates, [110] Ga2O3 nanowires grow preferentially. High-resolution transmission electron microscopy analysis reveals epitaxial relationship lattice matching between the Ga2O3 axis and SnO2 particles, forming skewer-like structures. The addition of chromium oxide to the source materials modifies the growth direction of the trunk Ga2O3 nanowires, growing along the [001], with crossing SnO2 wires. The SnO2/Ga2O3 junctions does not meet the lattice matching condition, forming a grain boundary. The electronic and optical properties have been studied by XPS and CL with high spatial resolution, enabling us to get both local chemical and electronic information on the surface in both type of structures. The results will allow tuning optical and electronic properties of oxide complex nanostructures locally as a function of the orientation. In particular, we report a dependence of the visible CL emission of SnO2 on its particular shape. Orange emission dominates in SnO2/Ga2O3 crossing wires while green-blue emission is observed in SnO2 particles attached to Ga2O3 trunks. The results show that the Ga2O3-SnO2 system appears to be a benchmark for shape engineering to get architectures involving nanowires via the control of the growth direction of the nanowires.
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Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an ideal model to study the junction is formed. By combining electron and synchrotron beam nanoprobes, we show here experimental evidence of the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga2O3/SnO2 nanowires. Our experiment opens new avenues for further local structure studies with both nanometer resolution and elemental sensitivity.
RESUMEN
Cathodoluminescence (CL) of Ga(2)O(3) nanowires and planar microstructures has been studied in a scanning electron microscope, as a function of the orientation angle of the structures relative to the position of the light detection system in the microscope chamber. CL contrast shows a marked dependence on the detection angle due to the waveguiding behaviour of the structures. The angle resolved cathodoluminescence (ARCL) measurements enable to evaluate the optical losses of guided blue-ultraviolet light in nanowires with diameters in the sub-wavelength range, deposited on graphite tape or silicon. In planar, branched feather-like microstructures, ARCL images demonstrate the directional-dependent light guiding behaviour of the nano-branches.
