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1.
Rev Sci Instrum ; 93(4): 043703, 2022 Apr 01.
Artículo en Inglés | MEDLINE | ID: mdl-35489958

RESUMEN

The PELIICAEN (Platform for the Study of Ion Implantation Controlled and Analyzed at the Nanometric Scale) setup is a unique device, both for all of its in situ ultra-high vacuum equipment (focused ion beam column, secondary electron microscope, atomic force microscope, and scanning tunneling microscope) and for its nanostructuration performances on materials. The setup has been recently equipped with its own electron cyclotron resonance ion sources, a new position-controlled platform using pneumatic vibration insulators, and a fast pulsing device. Its performances were then deeply improved, providing access to a large choice of ions, an adjustable ion implantation depth up to a few hundred nanometers, an image resolution down to 25 nm, and an ion beam size on the sample down to 100 nm. With all this equipment, the PELIICAEN setup is in the international foreground to perform and analyze ion implantation and surface modification.

2.
Rev Sci Instrum ; 90(8): 083306, 2019 Aug.
Artículo en Inglés | MEDLINE | ID: mdl-31472612

RESUMEN

The performance of a newly built omega type electrostatic analyzer designed to act as an in-line charge-state purification system for ions in the kiloelectronvolt energy range is reported. The analyzer consists of a set of four consecutive electrostatic 140° concentric cylindrical electrodes enclosed by Matsuda electrodes. This setup was recently tested and validated using O5+, Ar9+, and Xe20+ ion beams at an energy of 14 qkeV at the ARIBE facility. A resolving power of 10.5 and a transmission of 100% of the desired charge state are measured allowing a good purification of incoming ion beams with charge states up to 10+ and a fairly good purification for charge states at least up to 20+. In comparison with other in-line solutions such as the Wien filter, our system has the advantage of being purely electrostatic and therefore lacking common drawbacks as, for example, hysteresis.

3.
Rev Sci Instrum ; 79(6): 063301, 2008 Jun.
Artículo en Inglés | MEDLINE | ID: mdl-18601399

RESUMEN

We report on the development of a beam line for mass-selected metal and semiconductor clusters. The cluster source combines the principles of plasma sputtering and gas condensation. Both techniques together allow to produce clusters in a wide size range. With the aid of a time-of-flight system, small clusters (i.e., Cu(n)(+), n<100) are selected and pure beams containing only one cluster size are provided. For large clusters (containing several thousands of atoms), a beam with a narrow size distribution is obtained. A 90 degrees quadrupole deviator is used to separate charged clusters from neutral ones.

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