RESUMEN
Nanotechnology has delivered an amazing range of new materials such as nanowires, tubes, ribbons, belts, cages, flowers, and sheets. However, these are usually circular, cylindrical, or hexagonal in nature, while nanostructures with square geometries are comparatively rare. Here, a highly scalable method is reported for producing vertically aligned Sb-doped SnO2 nanotubes with perfectly-square geometries on Au nanoparticle covered m-plane sapphire using mist chemical vapor deposition. Their inclination can be varied using r- and a-plane sapphire, while unaligned square nanotubes of the same high structural quality can be grown on silicon and quartz. X-ray diffraction measurements and transmission electron microscopy show that they adopt the rutile structure growing in the [001] direction with (110) sidewalls, while synchrotron X-ray photoelectron spectroscopy reveals the presence of an unusually strong and thermally resilient 2D surface electron gas. This is created by donor-like states produced by the hydroxylation of the surface and is sustained at temperatures above 400 °C by the formation of in-plane oxygen vacancies. This persistent high surface electron density is expected to prove useful in gas sensing and catalytic applications of these remarkable structures. To illustrate their device potential, square SnO2 nanotube Schottky diodes and field effect transistors with excellent performance characteristics are fabricated.
RESUMEN
Tin(iv) dioxide (SnO2) is a technologically important transparent conducting oxide with high chemical stability. In air, the SnO2 surface is terminated with hydroxyl groups which cause the electronic bands to bend downward at the surface capturing a two-dimensional surface electron accumulation layer (SEAL). The SEAL promotes adsorption at the surface, giving environmentally-sensitive electronic properties; this sensitivity is a barrier to some potential applications of the material. This work investigates surface modification of SnO2via reaction with an aryldiazonium salt as a route to controlling the surface band bending. We compare the surface layers formed by reaction at open-circuit potential and under potential control of 4-(trifluoromethyl)benzene diazonium ions with moderately- and highly-doped (101) SnO2 thin films grown by plasma-assisted molecular beam epitaxy. Atomic force microscopy and synchrotron X-ray photoelectron spectroscopy (XPS) measurements demonstrate that both reaction conditions lead to covalently-attached 4-(trifluoromethyl)phenyl groups, with grafting at open-circuit potential giving thinner layers (<2 nm) and fewer direct bonds to the surface than electrografting (layer thickness >3 nm). Valence band investigations show that for all samples the 4-(trifluoromethyl)phenyl layers decrease the surface downward band bending with the greatest effect observed for the electrografted sample. In the latter case, a +0.29 eV shift in band bending relative to that of the unmodified material indicates the success in turning the surface electron accumulation layer into a depletion layer.
