High Detectivity Near Infrared Organic Photodetectors Using an Asymmetric Non-Fullerene Acceptor for Optimal Nanomorphology and Suppressed Dark Current.

Recently, the development of non-fullerene acceptors (NFAs) for near-infrared (NIR) organic photodetectors (OPDs) has attracted great interest due to their excellent NIR light absorption properties. Herein, we developed NFAs by substituting an electron-donating moiety (branched alkoxy thiophene (BAT)) asymmetrically (YOR1) and symmetrically (YOR2) for the Y6 framework. YOR1 exhibited nanoscale phase separation in a film blended with PTB7-Th. Moreover, substituting the BAT unit effectively extended the absorption wavelengths of YOR1 over 1000 nm by efficient intramolecular charge transfer and extension of the conjugation length. Consequently, YOR1-OPD exhibited significantly reduced dark current and improved responsivity by simultaneously satisfying optimal nanomorphology and significant suppression of charge recombination, resulting in 1.98 × 1013 and 3.38 × 1012 Jones specific detectivity at 950 and 1000 nm, respectively. Moreover, we successfully demonstrated the application of YOR1-OPD in highly sensitive photoplethysmography sensors using NIR light. This study suggests a strategic approach for boosting the overall performance of NIR OPDs targeting a 1000 nm light signal using an all-in-one (optimal morphology, suppressed dark current, and extended NIR absorption wavelength) NFA.

Growth time-dependent density and surface evolution of silicon nanowires in a vapor-liquid-solid process.

Single crystalline silicon nanowires (SiNWs) were grown on Si(100) substrate using a gold (Au)-catalyzed vapor-liquid-solid (VLS) approach. The dependence of the growth time (i.e., the time of exposure to the Si source) on the density and surface evolution of the grown SiNWs is considered. It was observed that the density of grown SiNWs on Si substrate increased with increasing growth time. The highest density (approximately 1.1 x 10(6) mm(-2)) was reached at 4 hr. Upon further exposure to the Si source, we observed that the density was maintained for up to 9 hr. We suggest that the increased Si chemical potential in Au-Si droplets with increased growth time enhanced the SiNW growth rate at the interfaces between Au-Si droplets and SiNWs, and enhanced the transition of the NWs from the existing Au-Si droplets onto Si substrate. This allows the SiNW density to increase with increased growth time of up to 4 hr. Moreover, we examined the influence of the growth time on surface evolution including Au diffusion, facet and taper formation, and vapor-solid (VS) growth of the SiNWs. To explain the behavior of the grown SiNWs in the VLS process, we propose a combined model using the VLS and VS growth mechanisms.

Novel streptavidin-functionalized silicon nanowire arrays for CD4+ T lymphocyte separation.

Silicon nanowires (SiNWs) offer promising inorganic nanostructures for biomedical application. Here, we report the development of a novel SiNW array designed for isolating primary CD4(+) T lymphocytes from the heterogeneous mixture of cell populations. Our system employed the specific high-affinity binding features of streptavidin (STR)-functionalized SiNW with biotin-labeled CD4(+) T lymphocytes. Fabricated SiNW arrays easily separated the CD4(+) T lymphocytes from the mouse whole splenocytes with over approximately 88% purity and demonstrated tight attachment to CD4(+) T lymphocytes by scanning electron microscopy. Thus, our STR-SiNW arrays provide a potential tool for specific cell separation and further present a possibility to be applied to the other area of biomedical applications.