Visuo-Haptic-Based Multimodal Feedback Virtual Reality Solution to Improve Anxiety Symptoms: A Proof-of-Concept Study.

With proper guidance, virtual reality (VR) can provide psychiatric therapeutic strategies within a simulated environment. The visuo-haptic-based multimodal feedback VR solution has been developed to improve anxiety symptoms through immersive experience and feedback. A proof-of-concept study was performed to investigate this VR solution. Nine subjects recently diagnosed with panic disorder were recruited, and seven of them eventually completed the trial. Two VR sessions were provided to each subject. Depression, anxiety, and VR sickness were evaluated before and after each session. Although there was no significant effect of the VR sessions on psychiatric symptoms, we could observe a trend of improvement in depression, anxiety, and VR sickness. The VR solution was effective in relieving subjective anxiety, especially in panic disorder without comorbidity. VR sickness decreased over time. This study is a new proof-of-concept trial to evaluate the therapeutic effect of VR solutions on anxiety symptoms using visuo-haptic-based multimodal feedback simultaneously.

Electrodeposition of Nanotwin Cu by Pulse Current for Through-Si-Via (TSV) Process.

Recently, the through-Si-via (TSV) had been focused as an optimal solution for interconnecting the 3-dimensionaly stacked semiconductor devices. One of core processes in the TSV technology is the Cu filling process which electrochemically forms the Cu in the via with high aspect ratio. The nanotwin Cu is effective candidate for replacing the conventional electrodeposited Cu due to its ultrahigh mechanical strength and good electrical conductivity. In this work, the formation of the nanotwin Cu in the TSV by applying pulse current was systematically studied. Also, TSV filling behavior by electrodeposition with pulse current was compared with direct current. The variation of mechanical properties as well as the electrical resistivity of electrodeposited Cu by the pulse current also investigated.

Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier.

Four-level nonvolatile small-molecule 4F(2) memory cells were developed with a sandwiched device structure consisting of an upper Al electrode, upper small-molecule layer (Alq(3), aluminum tris(8-hydroxyquinoline)), Ni nanocrystals surrounded by NiO tunneling barrier, lower small-molecule layer, and bottom Al electrode. In particular, an in situ O(2)-plasma oxidation process following Ni evaporation was developed to produce uniformly stable 10 nm Ni nanocrystals surrounded by a NiO tunneling barrier embedded in the small-molecule layer. They presented a memory margin (I(on)/I(off) ratio) of approximately 1 x 10(3), a retention time of more than 10(5) s, an endurance of more than 5 x 10(2) erase-and-program cycles, and multilevel cell (MLC) operation, being a terabit nonvolatile memory-cell. A vertically double-stacked 4F(2) multilevel nonvolatile memory cell was also developed, showing a memory margin of approximately 1 x 10(3) in both the top and bottom memory cells and eight-level cell operation.