RESUMEN
The metal thiophosphates (MTP), M2P2S6, are a versatile class of van der Waals materials, which are notable for the possibility of tuning their magnetic properties with the incorporation of different transition-metal cations. Further, they also offer opportunities to probe the independent and synergistic role of the magnetically active cation sublattice when coupled to P2Q6 polyhedra. Herein, we report the structural, magnetic, and electronic properties of the series of MTPs, MnxCo2-xP2S6 (x = 0.25, 0.5, 1, 1.5, 1.75) synthesized by the P2S5 flux method. Structural and elemental analysis indicates a homogeneous stoichiometry in the MnxCo2-xP2S6 compounds. We observe that a correlation is apparent between the intensities of specific Raman modes and Raman shifts with respect to the alloying ratio between Mn and Co. Magnetic susceptibility measurements indicate that the alloyed systems adopt an ordered antiferromagnetic (AFM) configuration with a dependence of the Néel temperature on the alloying ratio. A possible magnetic frustration behavior was observed for the composition MnCoP2S6 due to magnetic moment compensation as the alloying ratio between Mn and Co approaches parity. Interestingly, mixed oxidation states of the metal cation species are also observed in MnxCo2-xP2S6 along with a linear dependence of the work function on the alloying ratio of Mn and Co.
RESUMEN
An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS2) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-layer WS2, is an attractive characteristic for developing optoelectronic devices, as well as field-effect transistors. However, its relatively low mobility and electrical characteristics susceptible to environments remain obstacles for the use of device materials. Here, we demonstrate remarkable improvement in the electrical characteristics of single-layer WS2 field-effect transistor (SL-WS2 FET) using chemical vapor deposition (CVD)-grown hexagonal BN (h-BN). SL-WS2 FET sandwiched between CVD-grown h-BN films shows unprecedented high mobility of 214 cm(2)/Vs at room temperature. The mobility of a SL-WS2 FET has been found to be 486 cm(2)/Vs at 5 K. The ON/OFF ratio of output current is ~10(7) at room temperature. Apart from an ideal substrate for WS2 FET, CVD-grown h-BN film also provides a protection layer against unwanted influence by gas environments. The h-BN/SL-WS2/h-BN sandwich structure offers a way to develop high-quality durable single-layer TMDCs electronic devices.
