Electronic structure in a transition metal dipnictide TaAs2.

The family of transition-metal dipnictides has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently,TaAs2, a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal both closed and open pockets in the metallic Fermi surface (FS) and linearly dispersive bands on the (2‾01) surface, along with the presence of extreme MR observed from magneto-transport measurements. A comparison of the ARPES results with first-principles computations shows that the linearly dispersive bands on the measured surface ofTaAs2are trivial bulk bands. The absence of symmetry-protected surface state on the (2‾01) surface indicates its topologically dark nature. The presence of open FS features suggests that the open-orbit fermiology could contribute to the extremely large MR ofTaAs2.

Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure.

Quantum geometry in condensed-matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in two-dimensional electron gases and the anomalous Hall effect (AHE) in ferromagnets, the quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by the quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the antiferromagnetic (AFM) spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.

Axion optical induction of antiferromagnetic order.

Using circularly polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of chirality and magnetization, with important implications in asymmetric synthesis in chemistry; homochirality in biomolecules; and ferromagnetic spintronics. We report the surprising observation of helicity-dependent optical control of fully compensated antiferromagnetic order in two-dimensional even-layered MnBi2Te4, a topological axion insulator with neither chirality nor magnetization. To understand this control, we study an antiferromagnetic circular dichroism, which appears only in reflection but is absent in transmission. We show that the optical control and circular dichroism both arise from the optical axion electrodynamics. Our axion induction provides the possibility to optically control a family of [Formula: see text]-symmetric antiferromagnets ([Formula: see text], inversion; [Formula: see text], time-reversal) such as Cr2O3, even-layered CrI3 and possibly the pseudo-gap state in cuprates. In MnBi2Te4, this further opens the door for optical writing of a dissipationless circuit formed by topological edge states.

Fluence dependent dynamics of excitons in monolayer MoSi2Z4(Z = pnictogen).

Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered syntheticMoSi2Z4(Z=N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. We show that on increasing the pump fluence or photo-excited carrier density, the lowest energy exciton first undergoes a redshift followed by a blueshift, due to the renormalized exciton binding energies. The exciton binding energy varies as a Lennard-Jones-like potential as a function of the inter-exciton spacing. This establishes an atom-like attractive and repulsive interaction between excitons depending on the inter-exciton separation. Our study shows that theMoSi2Z4series of monolayers offer an exciting test-bed for exploring the physics of strongly bound excitons and their non-equilibrium dynamics.

Topology and Symmetry in Quantum Materials.

Interest in topological materials continues to grow unabated in view of their conceptual novelties as well as their potential as platforms for transformational new technologies. Electronic states in a topological material are robust against perturbations and support unconventional electromagnetic responses. The first-principles band-theory paradigm has been a key player in the field by providing successful prediction of many new classes of topological materials. This perspective presents a cross section through the recent work on understanding the role of geometry and topology in generating topological states and their responses to external stimuli, and as a basis for connecting theory and experiment within the band theory framework. In this work, effective strategies for topological materials discovery and impactful directions for future topological materials research are also commented.

Laser Irradiation Effect on the p-GaSe/n-HfS2 PN-Heterojunction for High-Performance Phototransistors.

Two-dimensional (2D)-based PN-heterojunction revealed a promising future of atomically thin optoelectronics with diverse functionalities in different environments. Herein, we reported a p-GaSe/n-HfS2 van der Waals (vdW) heterostructure for high-performance photodetectors and investigated the laser irradiation effect on the fabricated device. The fabricated 2D vdW heterostructure revealed a high photoresponsivity of 1 × 104 A W-1 with a photocurrent value of 377 nA due to unique type-II band alignment and enhanced surface potential under light illumination, which is further confirmed by density functional theory (DFT) calculations. Before laser irradiation, the device showed high field-effect mobility (µEF) of 26.37 cm2 V-1 s-1, ON/OFF ratio of ∼105, and threshold voltage swing (SS) of ∼463 mV dec-1. With the exposure of 690 mW cm-2 laser power density, µEF reached 204 cm2 V-1 s-1, although ∼2 V ΔVth shifts are observed along with the SS decreased to 175 mV dec-1. Interestingly, the reduced SS shows better channel control of the fabricated device with laser power. Similarly, the ON/OFF ratio decreased to ∼1.29 × 103. The results indicate that the creation of oxide trap charges at the interface of SiO2 and PN-heterojunction layers was observed with voltage biasing and high laser power density. The degradation of electrical parameters is attributed to fewer interface trap charges per surface area of the device rather than direct damage in PN-heterojunction layers. Considering the excellent 2D electronic properties, these materials are better candidates for future high-radiation environments.

Orthorhombic charge density wave on the tetragonal lattice of EuAl4.

EuAl4 possesses the BaAl4 crystal structure type with tetragonal symmetry I4/mmm. It undergoes a charge density wave (CDW) transition at T CDW = 145 K and features four consecutive antiferromagnetic phase transitions below 16 K. Here we use single-crystal X-ray diffraction to determine the incommensurately modulated crystal structure of EuAl4 in its CDW state. The CDW is shown to be incommensurate with modulation wave vector q = (0,0,0.1781 (3)) at 70 K. The symmetry of the incommensurately modulated crystal structure is orthorhombic with superspace group Fmmm(00σ)s00, where Fmmm is a subgroup of I4/mmm of index 2. Both the lattice and the atomic coordinates of the basic structure remain tetragonal. Symmetry breaking is entirely due to the modulation wave, where atoms Eu and Al1 have displacements exclusively along a, while the fourfold rotation would require equal displacement amplitudes along a and b. The calculated band structure of the basic structure and interatomic distances in the modulated crystal structure both indicate the Al atoms as the location of the CDW. The tem-per-ature dependence of the specific heat reveals an anomaly at T CDW = 145 K of a magnitude similar to canonical CDW systems. The present discovery of orthorhombic symmetry for the CDW state of EuAl4 leads to the suggestion of monoclinic instead of orthorhombic symmetry for the third AFM state.

Anomalies at the Dirac Point in Graphene and Its Hole-Doped Compositions.

We study the properties of the Dirac states in SiC-graphene and its hole-doped compositions employing angle-resolved photoemission spectroscopy and density functional theory. The symmetry-selective measurements for the Dirac bands reveal their linearly dispersive behavior across the Dirac point which was termed as the anomalous region in earlier studies. No gap is observed even after boron substitution that reduced the carrier concentration significantly from 3.7×10^{13} cm^{-2} in SiC-graphene to 0.8×10^{13} cm^{-2} (5% doping). The anomalies at the Dirac point are attributed to the spectral width arising from the lifetime and momentum broadening in the experiments. The substitution of boron at the graphitic sites leads to a band renormalization and a shift of the Dirac point towards the Fermi level. The internal symmetries appear to be preserved in SiC-graphene even after significant boron substitutions. These results suggest that SiC-graphene is a good platform to realize exotic science as well as advanced technology where the carrier properties like concentration, mobility, etc., can be tuned keeping the Dirac fermionic properties protected.

Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique.

Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure-Bi2 Te3 /Ni80 Fe20 because of diffusion of Ni in Bi2 Te3 (Ni-Bi2 Te3 ). The AFM property of the Ni-Bi2 Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi2 Te3 layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni-Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi2 Te4 in the Ni-Bi2 Te3 interface layer. The Neél temperature of the Ni-Bi2 Te3 layer is ≈63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.

Superconductivity in Heusler compound ScAu2Al.

We report superconducting state properties and electronic structure of a full Heusler material ScAu2Al. The resistivity measurement indicates a zero-field (at nominal Earth's field) superconducting transition temperature,Tc= 5.12 K (in contrary to the previously reported value of 4.4 K), which falls in the highestTc-regime among the Heusler superconductors. The magnetization data shows that ScAu2Al is a moderate type-II superconductor, where the critical field values can be estimated from the Ginzburg-Landau-Abrikosov-Gorkov theory. The field-dependent magnetization response further shows signatures of flux jump in ScAu2Al. A sharp jump in the temperature dependent specific heat (Cp) data confirms bulk superconductivity. We report that the electron-phonon coupling constant,λe-ph= 0.77, suggesting a moderate electron-phonon coupling in ScAu2Al. Further, we show that the observedλe-phvalue in ScAu2Al is the highest amongst the reported Heusler superconductors, indicating strong correlation betweenTcandλe-phvalues and significant role of electron-phonon coupling in mediating superconductivity in Heusler superconductors. Finally, we discuss the electronic properties and reveal the existence of van Hove singularity near the Fermi level in ScAu2Al.

Topological phonons and electronic structure of Li2BaSi class of semimetals.

Extension of the topological concepts to the bosonic systems has led to the prediction of topological phonons in materials. Here we discuss the topological phonons and electronic structure of Li2BaX (X = Si, Ge, Sn, and Pb) materials using first-principles theoretical modelling. A careful analysis of the phonon spectrum of Li2BaX reveals an optical mode inversion with the formation of nodal line states in the Brillouin zone. Our electronic structure results reveal a double band inversion at the Γ point with the formation of inner nodal-chain states in the absence of spin-orbit coupling (SOC). Inclusion of the SOC opens a materials-dependent gap at the band crossing points and transitions the system into a trivial insulator state. We also discuss the lattice thermal conductivity and transport properties of Li2BaX materials. Our results show that coexisting phonon and electron nontrivial topology with robust transport properties would make Li2BaX materials appealing for device applications.

Enflamed CO2 emissions from cement production in Nepal.

Cement industry is one of the main contributors to greenhouse gas (GHG) emissions, specifically carbon dioxide (CO2). This paper presents the cement production and the CO2 emissions from the cement industry in Nepal. We compute emissions for the process-related, combustion-related (fuel use), and electricity-related activities during the cement production. We used eight emission factors (EFs) for the process-related, two EFs for the combustion or fuel-related, and two for the electricity-related activities using the previous researches. We computed the emissions as a product of the activities and the EFs. The estimated CO2 emission in 2019 from the cement production is 3.45 ± 0.50 million metric tons (mMt) for Nepal. In 2019, the emissions are 1.87 ± 0.16 mMt from the process-related, 1.52 ± 0.34 mMt from the combustion-related, and 0.062 ± 0.004 mMt from the electricity use activities during the cement production in Nepal. Cumulative CO2 emission was 22.73 ± 3.82 mMt from 1987 to 2019. Per capita CO2 emission is 0.12 mMt for Nepal in 2019. Nepal contributes about 0.06% CO2 emission from cement production to the global CO2 emission (2.08 Gt) from the cement industry. By evaluating per capita gross domestic product (GDP) (from 1987/1988 to 2019/2020) and the human development index (HDI) (from 1990 to 2019) with the cement production, the result shows that cement production increases significantly (p < 0.01) with an increase in the GDP and the HDI. We emphasize that the study's outputs are directly relevant to the country's emission inventory, mitigation planning, and developing a strategy for cleaner production.

Layer Hall effect in a 2D topological axion antiferromagnet.

Whereas ferromagnets have been known and used for millennia, antiferromagnets were only discovered in the 1930s1. At large scale, because of the absence of global magnetization, antiferromagnets may seem to behave like any non-magnetic material. At the microscopic level, however, the opposite alignment of spins forms a rich internal structure. In topological antiferromagnets, this internal structure leads to the possibility that the property known as the Berry phase can acquire distinct spatial textures2,3. Here we study this possibility in an antiferromagnetic axion insulator-even-layered, two-dimensional MnBi2Te4-in which spatial degrees of freedom correspond to different layers. We observe a type of Hall effect-the layer Hall effect-in which electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under zero electric field, even-layered MnBi2Te4 shows no anomalous Hall effect. However, applying an electric field leads to the emergence of a large, layer-polarized anomalous Hall effect of about 0.5e2/h (where e is the electron charge and h is Planck's constant). This layer Hall effect uncovers an unusual layer-locked Berry curvature, which serves to characterize the axion insulator state. Moreover, we find that the layer-locked Berry curvature can be manipulated by the axion field formed from the dot product of the electric and magnetic field vectors. Our results offer new pathways to detect and manipulate the internal spatial structure of fully compensated topological antiferromagnets4-9. The layer-locked Berry curvature represents a first step towards spatial engineering of the Berry phase through effects such as layer-specific moiré potential.

Realization of an intrinsic ferromagnetic topological state in MnBi8Te13.

Novel magnetic topological materials pave the way for studying the interplay between band topology and magnetism. However, an intrinsically ferromagnetic topological material with only topological bands at the charge neutrality energy has so far remained elusive. Using rational design, we synthesized MnBi8Te13, a natural heterostructure with [MnBi2Te4] and [Bi2Te3] layers. Thermodynamic, transport, and neutron diffraction measurements show that despite the adjacent [MnBi2Te4] being 44.1 Å apart, MnBi8Te13 manifests long-range ferromagnetism below 10.5 K with strong coupling between magnetism and charge carriers. First-principles calculations and angle-resolved photoemission spectroscopy measurements reveal it is an axion insulator with sizable surface hybridization gaps. Our calculations further demonstrate the hybridization gap persists in the two-dimensional limit with a nontrivial Chern number. Therefore, as an intrinsic ferromagnetic axion insulator with clean low-energy band structures, MnBi8Te13 serves as an ideal system to investigate rich emergent phenomena, including the quantized anomalous Hall effect and quantized magnetoelectric effect.

Methane emission factors and carbon fluxes from enteric fermentation in cattle of Nepal Himalaya.

This study presents a first estimate of the country-specific enteric methane (CH4) emission factors (EFs) and the net CH4 fluxes for the local and improved cattle breeds (LCB and ICB) in Nepal using the IPCC Tier 2 methodology. The country-specific herd structure, morphological and feed characteristics data of cattle were collected from the field survey. In LCB, adult males had the highest mean live body weights (BWs) ranging from 222 ± 42 kg in the Hill to 237 ± 36 kg in the Plain region, while for improved cattle, adult females had the highest BW of 334 ± 45 kg in the Hill to 308 ± 38 kg in the Plain regions. Weight gains of ICB were higher than the LCB. Local calves gained BWs of 97 ± 20 g day-1, while improved calves gained a weight of 202 ± 41 g day-1. The CH4 EFs ranged from 13 ± 3 to 46 ± 9 kg CH4 head-1 yr-1 for different age-groups of the LCB, while for the ICB, the EFs ranged from 14 ± 3 to 75 ± 15 kg CH4 head-1 yr-1. Overall, the EFs were 33 ± 7 and 46 ± 9 kg CH4 head-1 yr-1 for LCB and ICB, respectively. The estimated enteric EFs of cattle in the Hill and Plain regions were not statistically different (p > 0.05), but a significant difference existed between the breeds (LCB and ICB; p < 0.05). The net CH4 flux was 254 ± 51 Gg yr-1 from enteric fermentation in cattle of Nepal using the country-specific EFs, about 15% higher than using the default EFs (221 ± 66 Gg yr-1). We underline that the emission estimation, deploying the country-specific EFs, will be more accurate, contributing to reduce the uncertainties in the national GHG inventories and supporting the mitigation actions.

Observation of gapped state in rare-earth monopnictide HoSb.

The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy, magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the [Formula: see text] and X-symmetry points of the Brillouin zone, we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.

Magnetotransport properties of noncentrosymmetric CaAgBi single crystal.

We report on the single crystal growth and transport properties of a topological semimetal CaAgBi which crystallizes in the hexagonal ABC-type structure with the non-centrosymmetric space group P63 mc (No. 186). The transverse magnetoresistance measurements with current in the basal plane of the hexagonal crystal structure reveal a value of about 30% for I∥[10̄0] direction and about 50% for I∥[1̅10] direction at 10 K in an applied magnetic field of 14 T. The magnetoresistance shows a cusp-like behavior in the low magnetic field region, suggesting the presence of weak antilocalization effect for temperatures less than 100 K. The Hall measurements reveal that predominant charge carriers are p-type, exhibiting a linear behavior at high fields. The magnetoconductance of CaAgBi is analyzed based on the modified Hikami-Larkin-Nagaoka model. Our first-principle calculations within a density-functional theory framework reveal that the Fermi surface of CaAgBi consists of both the electron and hole pockets and the size of the hole pocket is much larger than electron pockets suggesting the dominant p-type carriers in accordance with our experimental results.

Spontaneous gyrotropic electronic order in a transition-metal dichalcogenide.

Chirality is ubiquitous in nature, and populations of opposite chiralities are surprisingly asymmetric at fundamental levels1,2. Examples range from parity violation in the subatomic weak force to homochirality in biomolecules. The ability to achieve chirality-selective synthesis (chiral induction) is of great importance in stereochemistry, molecular biology and pharmacology2. In condensed matter physics, a crystalline electronic system is geometrically chiral when it lacks mirror planes, space-inversion centres or rotoinversion axes1. Typically, geometrical chirality is predefined by the chiral lattice structure of a material, which is fixed on formation of the crystal. By contrast, in materials with gyrotropic order3-6, electrons spontaneously organize themselves to exhibit macroscopic chirality in an originally achiral lattice. Although such order-which has been proposed as the quantum analogue of cholesteric liquid crystals-has attracted considerable interest3-15, no clear observation or manipulation of gyrotropic order has been achieved so far. Here we report the realization of optical chiral induction and the observation of a gyrotropically ordered phase in the transition-metal dichalcogenide semimetal 1T-TiSe2. We show that shining mid-infrared circularly polarized light on 1T-TiSe2 while cooling it below the critical temperature leads to the preferential formation of one chiral domain. The chirality of this state is confirmed by the measurement of an out-of-plane circular photogalvanic current, the direction of which depends on the optical induction. Although the role of domain walls requires further investigation with local probes, the methodology demonstrated here can be applied to realize and control chiral electronic phases in other quantum materials4,16.

Discovery of topological Weyl fermion lines and drumhead surface states in a room temperature magnet.

Topological matter is known to exhibit unconventional surface states and anomalous transport owing to unusual bulk electronic topology. In this study, we use photoemission spectroscopy and quantum transport to elucidate the topology of the room temperature magnet Co2MnGa. We observe sharp bulk Weyl fermion line dispersions indicative of nontrivial topological invariants present in the magnetic phase. On the surface of the magnet, we observe electronic wave functions that take the form of drumheads, enabling us to directly visualize the crucial components of the bulk-boundary topological correspondence. By considering the Berry curvature field associated with the observed topological Weyl fermion lines, we quantitatively account for the giant anomalous Hall response observed in this magnet. Our experimental results suggest a rich interplay of strongly interacting electrons and topology in quantum matter.