RESUMEN
Defective and perfect sites naturally exist within electronic semiconductors, and considerable efforts to reduce defects to improve the performance of electronic devices, especially in hybrid organic-inorganic perovskites (ABX3 ), are undertaken. Herein, foldable hole-transporting materials (HTMs) are developed, and they extend the wavefunctions of A-site cations of perovskite, which, as hybridized electronic states, link the trap states (defective site) and valence band edge (perfect site) between the naturally defective and perfect sites of the perovskite surface, finally converting the discrete trap states of the perovskite as the continuous valence band to reduce trap recombination. Tailoring the foldability of the HTMs tunes the wavefunctions between defective and perfect surface sites, allowing the power conversion efficiency of a small cell to reach 23.22% and that of a mini-module (6.5 × 7 cm, active area = 30.24 cm2 ) to reach as high as 21.71% with a fill factor of 81%, the highest value reported for non-spiro-OMeTAD-based perovskite solar modules.
RESUMEN
The future of energy generation is well in tune with the critical needs of the global economy, leading to more green innovations and emissions-abatement technologies. Introducing concentrated photovoltaics (CPVs) is one of the most promising technologies owing to its high photo-conversion efficiency. Although most researchers use silicon and cadmium telluride for CPV, we investigate the potential in nascent technologies, such as perovskite solar cell (PSC). This work constitutes a preliminary investigation into a "large-area" PSC module under a Fresnel lens (FL) with a "refractive optical concentrator-silicon-on-glass" base to minimize the PV performance and scalability trade-off concerning the PSCs. The FL-PSC system measured the solar current-voltage characteristics in variable lens-to-cell distances and illuminations. The PSC module temperature was systematically studied using the COMSOL transient heat transfer mechanism. The FL-based technique for "large-area" PSC architectures is a promising technology that further facilitates the potential for commercialization.
RESUMEN
Planar superlattice devices revolutionized our approach to solid-state technology by reducing the Shockley-Read-Hall losses to negligible levels. Despite these achievements, significant efficiency losses are found in current devices presumably caused by the Auger recombinations. This work present the theoretical considerations of the Auger recombination suppression through heterostructure engineering. It is found that Auger recombinations are suppressed through the heterobarrier-carrier interactions. It is shown that a minima in Auger recombinations exists in type-II and III heterostructures, and can be reached through proper conduction and valence band alignments. Furthermore, the careful consideration of the heterostructure enables natural Auger suppression for high operating temperatures. Dark current based on the optimized heterostructure was computed and found to be over an order of magnitude below the currently reported measurements for the superlattice and QD devices. This research provides crucial information about the underlying physics behind the Auger recombination, enabling future superlattice and quantum dot device optimization.
