Safety and immunogenicity of an attenuated Chinese pseudorabies variant by dual deletion of TK&gE genes.

BACKGROUND: Since the outbreak of a new emerging virulent pseudorabies virus mutant in Chinese pig herds, intensive research has been focused on the construction of novel gene deletion vaccine based on the variant virulent viruses. An ideal vaccine candidate is expected to have a balanced safety and immunogenicity. RESULTS: From the infectious clone of PRV AH02LA strain, a TK deletion mutant was generated through two-step Red mutagenesis. After homologous recombination with a transfer vector, a TK&gE dual deficient mutant PRV (PRVΔTK&gE-AH02) was generated, and its structure verified by PCR, RFLP and sequencing. Growth kinetics test showed that PRVΔTK&gE-AH02 reached a titer of 107.5 TCID50 /mL on ST cells. The PRVΔTK&gE-AH02 at a dose of 106.0 TCID50 /animal was not virulent in mice or 1-day-old piglets with maternal PRV antibodies. No clinical signs or virus shedding were detected in 28~ 35-day-old piglets without maternal PRV antibodies after nasal or intramuscular administration with a dose of 106.0 TCID50, although it caused one death of four 1-day-old piglets without maternal PRV antibodies. In the efficiency test of PRVΔTK&gE-AH02, all four 28~ 35-day-old piglets without PRV antibody in the challenge control showed typical clinical symptoms and virus shedding, and two died at 4~ 5 days post challenge. All piglets in 105.0, 104.0 and 103.0 TCID50/dose PRVΔTK&gE-AH02 groups provided complete protection against challenge at only 7 days post intramuscular vaccination. More importantly, PRVΔTK&gE-AH02 stopped virus shedding in these piglets. In contrast, all four piglets in PRV Bartha K61 vaccine group developed high body temperature (≥40.5 °C) and viral shedding, despite they had mild or even no clinical symptoms. CONCLUSIONS: The constructed TK&gE dual deletion mutant PRVΔTK&gE-AH02 can reach high titers on ST cells. The live vaccine of PRVΔTK&gE-AH02 is highly safe, and can not only provide clinical protection but also stops virus shedding. This study suggests that PRVΔTK&gE-AH02 might work as a promising vaccine candidate to combat the PRV variant emerging in Chinese herds since 2011.

NH4F-assisted one-pot solution synthesis of hexagonal ZnO microdiscs for efficient ultraviolet photodetection.

One-pot solution method to grow large hexagonal ZnO microdiscs with the aid of ammonium fluoride (NH4F) mineralizer has been realized. The size, morphology, crystallinity and optical properties of the synthesized ZnO microdiscs can be efficiently modulated by the concentration of NH4F. X-ray diffraction and scanning electron microscopy analyses illustrate that hexagonal ZnO microdiscs achieved at 0.03 M NH4F concentration have larger disc size and narrower full-width value at half maximum of (002) peak. It implies better crystal quality compared with those from other additive concentrations. Photoluminescence results also demonstrate the same trend. These results indicate that with proper addition of NH4F, the crystal quality of ZnO microdiscs has been improved and defects have been suppressed. Furthermore, a UV photodetector has been fabricated by simply transferring the ZnO microdiscs grown with 0.03 M NH4F onto a p-type silicon substrate. The device exhibits photosensitive behaviour at 365 nm UV light illuminating when -0.6 V is applied. The response time as well as recovery time is less than 0.1 s. The relatively large photoresponsivity of 1.19 A W-1 with power consumption less than 10 nW makes it possible in application field of highly efficient low power consumption UV detection.

Enhanced field emission from in situ synthesized 2D copper sulfide nanoflakes at low temperature by using a novel controllable solvothermal preferred edge growth route.

A facile one-pot solvothermal route using the reaction of sputtered copper film and sulfur powder in ethanol solution at a low temperature of 90 °C for 12 hours has been implemented to in situ synthesize 2D hexagonal copper sulfide (CuS) nanoflakes. Their field electron emission (FE) characteristics were investigated and were found to have a close relationship with the copper film's thickness. The lowest turn on electric field (Eon) was 2.05 V µm(-1) and the largest field enhancement factor (ß) was 7261 when the copper film's thickness was 160 nm. Furthermore, through a preferred edge growth route, patterned CuS nanoflakes were synthesized with the combined effect from a copper film seed layer and a passivation layer to further improve FE properties with an Eon of 1.65 V µm(-1) and a ß of 8351. The mechanism of the patterned CuS nanoflake preferred edge growth is reported and discussed for the first time.

Synthesis and field emission studies of tower-like GaN nanowires.

Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are [Formula: see text] and [Formula: see text] facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/µm which is lower than those of other GaN one-dimensional (1D) nanomaterials. PACS: 81.15.Gh; 68.37.Lp; 68.37.Vj.

Field electron emission of layered Bi2Se3 nanosheets with atom-thick sharp edges.

Field electron emission properties of solution processed few-layer Bi2Se3 nanosheets are studied for the first time, which exhibit a low turn-on field of 2.3 V µm(-1), a high field enhancement factor of up to 6860 and good field emission stability. This performance is better than that of the as reported layered MoS2f sheets and is comparable to that of single layer graphene films. The efficient field emission behaviours are found to be not only attributed to their lower work function but also related to their numerous sharp edges or protrusion decorated structure based on our simulation results. Besides, the contribution of possible two-dimensional electron gas surface states of atom-thick layered Bi2Se3 nanosheets is discussed in this paper. We anticipate that these solution processed layered Bi2Se3 nanosheets have great potential as robust high-performance vertical structure electron emitters for future light weight and highly flexible vacuum micro/nano-electronic device applications.