Transcatheter Arterial Chemoembolization Combined with Hepatic Arterial Infusion Chemotherapy Versus Transcatheter Arterial Chemoembolization for Unresectable Hepatocellular Carcinoma: A Systematic Review and Meta-analysis.

In this study, we evaluated the efficacy and safety of transcatheter arterial chemoembolization (TACE) combined with hepatic arterial infusion chemotherapy (HAIC) compared to TACE monotherapy for the treatment of unresectable hepatocellular carcinoma (HCC). Relevant studies were systematically searched in PubMed, Embase, Web of Science, and Cochrane Library databases until September 1, 2023. Our analysis included 7 cohort studies encompassing a total of 630 patients. The results demonstrated that the TACE plus HAIC group exhibited significantly improved prognosis compared to the TACE alone group, as evidenced by superior rates of complete response, partial response, progressive disease, objective response rate, and disease control rate. Moreover, the TACE group displayed a lower risk of platelet reduction and vomiting when compared to the TACE plus HAIC group. None of the 7 studies reported any intervention-related mortality. In conclusion, the combination of TACE and HAIC may be recommended as a viable option for patients with unresectable HCC, given its evident enhancements in survival and tumor response rates without significant differences in adverse events when compared to TACE monotherapy. Nevertheless, additional randomized controlled trials and studies involving Western cohorts are warranted to further validate these findings.

Transcatheter Arterial Chemoembolization Combined with Hepatic Arterial Infusion Chemotherapy Versus Transcatheter Arterial Chemoembolization for Unresectable Hepatocellular Carcinoma: A Systematic Review and Meta-analysis.

BACKGROUND/AIMS:  In this study, we evaluated the efficacy and safety of transcatheter arterial chemoembolization (TACE) combined with hepatic arterial infusion chemotherapy (HAIC) compared to TACE monotherapy for the treatment of unresectable hepatocellular carcinoma (HCC). MATERIALS AND METHODS:  Relevant studies were systematically searched in PubMed, Embase, Web of Science, and Cochrane Library databases until September 1, 2023. Our analysis included 7 cohort studies encompassing a total of 630 patients. RESULTS:  The results demonstrated that the TACE plus HAIC group exhibited significantly improved prognosis compared to the TACE alone group, as evidenced by superior rates of complete response, partial response, progressive disease, objective response rate, and disease control rate. Moreover, the TACE group displayed a lower risk of platelet reduction and vomiting when compared to the TACE plus HAIC group. None of the 7 studies reported any intervention-related mortality. CONCLUSION:  In conclusion, the combination of TACE and HAIC may be recommended as a viable option for patients with unresectable HCC, given its evident enhancements in survival and tumor response rates without significant differences in adverse events when compared to TACE monotherapy. Nevertheless, additional randomized controlled trials and studies involving Western cohorts are warranted to further validate these findings.

High-efficiency terahertz-wave generation based on extended interaction oscillator with strongly-coupled 2π mode operation.

A slow-wave structure improvement for enhancing the 2π-mode electronic efficiency is embodied in the validation of an extended interaction oscillator (EIO), which has an electronic efficiency of 6.52% at 0.22 THz from particle-in-cell (PIC) calculations. A 2π-mode bi-periodic slow-wave structure (BPSWS) with staggered long and short slots is utilized for optimizing the circuit performance. The proposed BPSWS has the capability of combining the respective advantages for both π and 2π-mode in terms of coupling performance and output performance, thus supporting a strongly-coupled 2π-mode with higher coupling capability. Compared with the typical mono-periodic SWS (MPSWS), the adopted strongly-coupled 2π-mode effectively improves the characteristic impedance M2R/Q by 103% to 66.79 Ω, the coupling coefficient by 66% to 0.497, and the normalized wave-amplitude by 22%. Accordingly, 503 W of average output power can be derived for the BPSWS-EIO with a 25.7 kV and 0.3 A sheet beam injected. Cold-test experiments were conducted, confirming that the 0.22 THz structure exhibits commendable fabrication precision and consistency and thus demonstrates the expected frequency response.

TaF4: A Novel Two-Dimensional Antiferromagnetic Material with a High Néel Temperature Investigated Using First-Principles Calculations.

The structural, electronic, and magnetic properties of a novel two-dimensional monolayer material, TaF4, are investigated using first-principles calculations. The dynamical and thermal stabilities of two-dimensional monolayer TaF4 were confirmed using its phonon dispersion spectrum and molecular dynamics calculations. The band structure obtained via the high-accuracy HSE06 (Heyd-Scuseria-Ernzerhof 2006) functional theory revealed that monolayer two-dimensional TaF4 is an indirect bandgap semiconductor with a bandgap width of 2.58 eV. By extracting the exchange interaction intensities and magnetocrystalline anisotropy energy in a J1-J2-J3-K Heisenberg model, it was found that two-dimensional monolayer TaF4 possesses a Néel-type antiferromagnetic ground state and has a relatively high Néel temperature (208 K) and strong magnetocrystalline anisotropy energy (2.06 meV). These results are verified via the magnon spectrum.

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

The electronic, optical and photocatalytic properties of GaN/C2N van der Waals heterostructures are investigated using the first-principles theory, and effective regulation through element doping or strain is achieved further. The results show that the GaN/C2N heterostructure exhibits a type-II band alignment with an indirect band gap of 2.25 eV, which benefits photocatalytic water splitting. In this study, both type-I and type-II band alignments can be obtained through doping or strain modulation. Doping with P or As atoms reduces the band gap of the GaN/C2N heterostructure and transforms it to a type-I direct bandgap semiconductor, which makes the doped GaN/C2N heterostructure more suitable for optoelectronic devices. In addition, the GaN/C2N heterostructure retains type-II band alignment and has a decreased band gap under tensile strain (0 to +4%), which is more favorable for photocatalytic water splitting. Compressive strain (0 to -4%) converts the type-II band alignment to type-I, resulting in a wider light absorption range, making the GaN/C2N heterostructure more suitable for optoelectronic devices. These theoretical results are helpful for the design of GaN/C2N vdW heterostructures in the fields of optoelectronic devices and photocatalysts.

A Study on the Field Emission Characteristics of High-Quality Wrinkled Multilayer Graphene Cathodes.

Field emission (FE) necessitates cathode materials with low work function and high thermal and electrical conductivity and stability. To meet these requirements, we developed FE cathodes based on high-quality wrinkled multilayer graphene (MLG) prepared using the bubble-assisted chemical vapor deposition (B-CVD) method and investigated their emission characteristics. The result showed that MLG cathodes prepared using the spin-coating method exhibited a high field emission current density (~7.9 mA/cm2), indicating the excellent intrinsic emission performance of the MLG. However, the weak adhesion between the MLG and the substrate led to the poor stability of the cathode. Screen printing was employed to prepare the cathode to improve stability, and the influence of a silver buffer layer was explored on the cathode's performance. The results demonstrated that these cathodes exhibited better emission stability, and the silver buffer layer further enhanced the comprehensive field emission performance. The optimized cathode possesses low turn-on field strength (~1.5 V/µm), low threshold field strength (~2.65 V/µm), high current density (~10.5 mA/cm2), and good emission uniformity. Moreover, the cathode also exhibits excellent emission stability, with a current fluctuation of only 6.28% during a 4-h test at 1530 V.

Evaluating the Field Emission Properties of N-Type Black Silicon Cold Cathodes Based on a Three-Dimensional Model.

Black silicon (BS), a nanostructured silicon surface containing highly roughened surface morphology, has recently emerged as a promising candidate for field emission (FE) cathodes in novel electron sources due to its huge number of sharp tips with ease of large-scale fabrication and controllable geometrical shapes. However, evaluating the FE performance of BS-based nanostructures with high accuracy is still a challenge due to the increasing complexity in the surface morphology. Here, we demonstrate a 3D modeling methodology to fully characterize highly disordered BS-based field emitters randomly distributed on a roughened nonflat surface. We fabricated BS cathode samples with different morphological features to demonstrate the validity of this method. We utilize parametrized scanning electron microscopy images that provide high-precision morphology details, successfully describing the electric field distribution in field emitters and linking the theoretical analysis with the measured FE property of the complex nanostructures with high precision. The 3D model developed here reveals a relationship between the field emission performance and the density of the cones, successfully reproducing the classical relationship between current density J and electric field E (J-E curve). The proposed modeling approach is expected to offer a powerful tool to accurately describe the field emission properties of large-scale, disordered nano cold cathodes, thus serving as a guide for the design and application of BS as a field electron emission material.

Highly Sensitive H2S Gas Sensor Based on a Lead-Free CsCu2I3 Perovskite Film at Room Temperature.

Recently, there have been reports of lead halide perovskite-based sensors demonstrating their potential for gas sensing applications. However, the toxicity of lead and the instability of lead-based perovskites have limited their applications. This study addressed this issue by developing a H2S gas sensor based on a lead-free CsCu2I3 film prepared using a one-step CVD method. The sensor demonstrated excellent sensing properties, including a high response and selectivity toward H2S, even at low concentrations (0.2 ppm) at room temperature. Furthermore, a reasonable sensing mechanism was proposed. It is suggested that the sensing mechanism sheds light on the role of defects in perovskite materials, the impact of H2S as an electron donor, and the occurrence of reversible chemical reactions. These findings suggest that lead-free CsCu2I3 has great potential in the field of H2S gas sensing.