Enhancing LED spectral output with perylene dye-based remote phosphor.

LEDs offer a wide range of spectral output with high efficiencies. However, the efficiencies of solid-state LEDs with green and yellow wavelengths are rather low due to the lack of suitable direct bandgap materials. Here, we introduce and develop perylene-enhanced green LEDs that produce a higher wall-plug efficiency of 48% compared to 38% for a solid-state green LED. While the wall-plug efficiency of the perylene-enhanced red LED is still lower than that of a solid-state red LED, we demonstrate that remote phosphor colour converters are effective solutions for targeted spectral tuning across the visible spectrum for horticultural lighting. In this work, we retrofit existing white LEDs and augment photosynthesis via spectral output tuning to achieve a higher red-to-blue ratio. Our results show a significant improvement in plant growth by up to 39%, after a 4-month growth cycle. We observe no visible degradation of the colour converter even under continuous illumination with a current of 400 mA. This opens up new opportunities for using perylene-based colour converters for tuneable illumination with high brightness.

Sub-30 nm thick plasmonic films and structures with ultralow loss.

We report an alternative method of producing sub-30 nm thick silver films and structures with ultralow loss using gas cluster ion beam irradiation (GCIB). We have direct evidence showing that scattering from grain boundaries and voids rather than surface roughness are the main mechanisms for the increase in loss with reducing thickness. Using GCIB irradiation, we demonstrate the ability to reduce these scattering effects simultaneously through nanoscale surface smoothing, increase in grain width and lower percolation threshold. Significant improvement in electrical and optical properties by up to 4 times is obtained, before deviation from bulk silver properties starts to occur at 12 nm. We show that this is an enabling technology that can be applied post fabrication to metallic films or lithographically patterned nanostructures for enhanced plasmonic performance, especially in the ultrathin regime.

Metal-assisted photonic mode for ultrasmall bending with long propagation length at visible wavelengths.

In this work, we investigate the use of metal-assisted photonic guiding in a polymer-metal waveguide as an alternative approach for high density photonic integration at visible wavelengths. We demonstrate high confinement and long propagation length in sub-wavelength dimensions down to 300nm × 200nm using leakage radiation microscopy at a wavelength of 632.8 nm. Simulations using the finite element method (FEM) show that the optimum dimension that gives good confinement and propagation length is similar to that of the predicted plasmonic mode supported in the same waveguide. Under such optimum conditions, the metal-assisted photonic mode shows a five times longer propagation length and higher transmission efficiency for all 90° bending radius down to 1 µm compared to the plasmonic mode.

Low loss silicon waveguides for the mid-infrared.

Silicon-on-insulator (SOI) has been used as a platform for near-infrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieved at a wavelength of 3.39 µm. We also report propagation loss measurements for silicon on porous silicon (SiPSi) waveguides at the same wavelength.

An all-silicon, single-mode Bragg cladding rib waveguide.

In this paper, we demonstrate a direct method of fabricating an all-silicon, single-mode Bragg cladding rib waveguide using proton beam irradiation and subsequent electrochemical etching. The Bragg waveguide consists of porous silicon layers with a low index core of 1.4 that is bounded by eight bilayers of alternating high and low refractive index of 1.4 and 2.4. Here, the ion irradiation acts to reduce the thickness of porous silicon formed, creating an optical barrier needed for lateral confinement. Single-mode guiding with losses as low as approximately 1 dB/cm were obtained for both TE and TM polarization over a broad range of wavelengths from 1525 nm to 1625 nm. Such an approach offers a method for monolithic integration of Bragg waveguides in silicon, without the need for multiple processes of depositing alternating materials.

Three-dimensional control of optical waveguide fabrication in silicon.

In this paper, we report a direct-write technique for three-dimensional control of waveguide fabrication in silicon. Here, a focused beam of 250 keV protons is used to selectively slow down the rate of porous silicon formation during subsequent anodization, producing a silicon core surrounded by porous silicon cladding. The etch rate is found to depend on the irradiated dose, increasing the size of the core from 2.5 microm to 3.5 microm in width, and from 1.5 microm to 2.6 microm in height by increasing the dose by an order of magnitude. This ability to accurately control the waveguide profile with the ion dose at high spatial resolution provides a means of producing three-dimensional silicon waveguide tapers. Propagation losses of 6.7 dB/cm for TE and 6.8 dB/cm for TM polarization were measured in linear waveguides at the wavelength of 1550 nm.