Analysis of the Mechanism of Action of Kushen in the Treatment of Tuberculosis Based on Network Pharmacology.

Context: Drug-resistant tuberculosis (TB), especially multidrug-resistant TB, has continued to increase and pan-drug-resistant TB and even fully drug-resistant TB have emerged, bringing great challenges to the treatment of TB. Development of new, safe, and effective antituberculosis drugs is an urgent need. Objective: The study intended to evaluate the use of the network pharmacology method to comprehensively and systematically analyze the network relationship of Kushen's main components, targets, and signaling pathways, aiming to provide new ideas and clues for an in-depth study of the mechanism of Kushen's main components in the treatment of pulmonary TB. Design: The research team performed a Network pharmacology analysis. Setting: The study took place in the Department of Respiratory and Critical Care Medicine at the Third People's Hospital of Yichang City in Yichang, Hubei, China. Outcome Measures: The research team: (1) screened Kushen's active ingredients and related targets using the Traditional Chinese Medicine System Pharmacology (TCMSP) database and analysis platform; (2) used the GeneCards database and the Online Mendelian Inheritance in Man (OMIM) database to search for disease targets, (3) connected the active ingredient's targets to the disease targets to obtain predictive targets for Kushen to act against TB, (4) used the STRING database to construct a protein-protein interaction (PPI) network map, (5) used the Database for Annotation, Visualization and Integrated Discovery (DAVID) to subject the intersecting genes to gene ontology (GO) and Kyoto Encyclopedia of Genes and Genomes (KEGG) enrichment analyses, and (6) used the TCMSP and Protein Data Bank (PDB) databases to dock the active ingredients with target-protein molecules. Results: The research team found 45 active ingredients for Kushen and 177 target-protein genes related to active ingredients. The PPI network map of the Kushen-TB targets and found that the top 10 targets of Kushen were: (1) mitogen-activated protein kinase 8 (MAPK8); (2) protein kinase B (AKT1); (3) MAPK1, (4) estrogen receptor 1 (ESR1), (5) rel avian reticuloendotheliosis viral oncogene homolog A (RELA), (6) interleukin-6 (IL6), (7) MYC proto-oncogene, basic helix-loop-helix (bHLH) transcription factor MYC), (8) retinoid X receptor alpha (RXRA), (9) FOS proto-oncogene activator protein 1 (AP-1) transcription factor subunit (FOS), and (10) JUN proto-oncogene AP-1 transcription factor subunit (JUN). The KEGG analysis suggested that Kushen can intervene in TB through the hypoxia-inducible factor 1 (HIF-1) signaling pathway. Conclusions: The network pharmacology analysis showed that Kushen's active ingredients can play a role in the treatment of TB through the HIF-1 signaling pathway.

Detection of wavelength in the range from ultraviolet to near infrared light using two parallel PtSe2/thin Si Schottky junctions.

A wavelength sensor as a representative optoelectronic device plays an important role in many fields including visible light communication, medical diagnosis, and image recognition. In this study, a wavelength-sensitive detector with a new operation mechanism was reported. The as-proposed wavelength sensor which is composed of two parallel PtSe2/thin Si Schottky junction photodetectors is capable of distinguishing wavelength in the range from ultraviolet to near infrared (UV-NIR) light (265 to 1050 nm), in that the relationship between the photocurrent ratio of both photodetectors and incident wavelength can be numerically described by a monotonic function. The unique operation mechanism of the thin Si based wavelength sensor was unveiled by theoretical simulation based on Synopsys Sentaurus Technology Computer Aided Design (TCAD). Remarkably, the wavelength sensor has an average absolute error of ±4.05 nm and an average relative error less than ±0.56%, which are much better than previously reported devices. What is more, extensive analysis was performed to reveal how and to what extent the working temperature and incident light intensity, and the thickness of the PtSe2 layer will influence the performance of the wavelength sensor.

Leaky Mode Resonance-Induced Sensitive Ultraviolet Photodetector Composed of Graphene/Small Diameter Silicon Nanowire Array Heterojunctions.

Ultraviolet photodetectors (UVPDs) based on wide band gap semiconductors (WBSs) are important for various civil and military applications. However, the relatively harsh preparation conditions and the high cost are unfavorable for commercialization. In this work, we proposed a non-WBS UVPD by using a silicon nanowire (SiNW) array with a diameter of 45 nm as building blocks. Device analysis revealed that the small diameter SiNW array covered with monolayer graphene was sensitive to UV light but insensitive to both visible and infrared light illumination, with a typical rejection ratio of 25. Specifically, the responsivity, specific detectivity, and external quantum efficiency under 365 nm illumination were estimated to be 0.151 A/W, 1.37 × 1012 Jones, and 62%, respectively, which are comparable to or even better than other WBS UVPDs. Such an abnormal photoelectrical characteristic is related to the HE1m leaky mode resonance (LMR), which is able to shift the peak absorption spectrum from near-infrared to UV regions. It is also revealed that this LMR is highly dependent on the diameter and the period of the SiNW array. These results show narrow band gap semiconductor nanostructures as promising building blocks for the assembly of sensitive UV photodetectors, which are very important for various optoelectronic devices and systems.

Filterless Discrimination of Wavelengths in the Range from Ultraviolet to Near-Infrared Light Using Two PdSe2/Thin Si/PdSe2 Heterojunction Photodetectors.

In this study, we present a wavelength sensor that is capable of distinguishing the spectrum in the range from ultraviolet (UV) to near-infrared (NIR) light. The filterless device is composed of two horizontally stacking PdSe2/20 µm Si/PdSe2 heterojunction photodetectors with a photovoltaic (PV) behavior, which makes it possible for the device to work at 0 bias voltage. Due to the relatively small thickness of Si and the wavelength-dependent absorption coefficient, the two PdSe2/20 µm Si/PdSe2 photodetectors according to theoretical simulation display a sharp contrast in distribution of the photoabsorption rate. As a result, the photocurrents of both photodetectors evolve in completely different ways with increasing wavelengths, leading to a monotonic decrease in the photocurrent ratio from 6800 to 22 when the wavelength gradually increases from 265 to 1050 nm. The corresponding relationship between both the photocurrent ratio and wavelength can be easily described by the monotonic function, which can help to precisely determine the wavelength in the range from 265 to 1050 nm, with an average relative error less than ±1.6%. It is also revealed that by slightly revising the monotonic function, the wavelength in other different temperatures can also be estimated.

Direct Tellurization of Pt to Synthesize 2D PtTe2 for High-Performance Broadband Photodetectors and NIR Image Sensors.

Platinum telluride (PtTe2) has garnered significant research enthusiasm owing to its unique characteristics. However, large-scale synthesis of PtTe2 toward potential photoelectric and photovoltaic application has not been explored yet. Herein, we report direct tellurization of Pt nanofilms to synthesize large-area PtTe2 films and the influence of growth conditions on the morphology of PtTe2. Electrical analysis reveals that the as-grown PtTe2 films exhibit typical semimetallic behavior, which is in agreement with the results of first-principles density functional theory (DFT) simulation. Moreover, the combination of multilayered PtTe2 and Si results in the formation of a PtTe2/Si heterojunction, exhibiting an obvious rectifying effect. Moreover, the PtTe2-based photodetector displays a broadband photoresponse to incident radiation in the range of 200-1650 nm, with the maximum photoresponse at a wavelength of ∼980 nm. The R and D* of the PtTe2-based photodetector are found to be 0.406 A W-1 and 3.62 × 1012 Jones, respectively. In addition, the external quantum efficiency is as high as 32.1%. On the other hand, the response time of τrise and τfall is estimated to be 7.51 and 36.7 µs, respectively. Finally, an image sensor composed of a 8 × 8 PtTe2-based photodetector array was fabricated, which can record five near-infrared (NIR) images under 980 nm with a satisfying resolution. The result demonstrates that the as-prepared PtTe2 material will be useful for application in NIR optoelectronics.

Sensitive Deep Ultraviolet Photodetector and Image Sensor Composed of Inorganic Lead-Free Cs3Cu2I5 Perovskite with Wide Bandgap.

In this work, a sensitive deep ultraviolet (DUV) light photodetector based on inorganic and lead-free Cs3Cu2I5 crystalline film derived by a solution method was reported. Optoelectronic characterization revealed that the perovskite device exhibited nearly no sensitivity to visible illumination with wavelength of 405 nm but exhibited pronounced sensitivity to both DUV and UV light illumination with response speeds of 26.2/49.9 ms for rise/fall time. The Ilight/Idark ratio could reach 127. What is more, the responsivity and specific detectivity were calculated to be 64.9 mA W-1 and 6.9 × 1011 Jones, respectively. In addition, the device could keep its photoresponsivity after storage in air environment for a month. It is also found that the capability of Cs3Cu2I5 crystalline film device can readily record still DUV image with acceptable resolution. The above results confirm that the DUV photodetector may hold great potential for future DUV optoelectronic device and systems.

[Effects of cluster needling at the scalp points on the expression of ChAT and AchE of hippocampus in rats with Alzheimer's disease].

OBJECTIVE: To explore the effects of cluster needling at the scalp points on the expression of choline acetyl transferase (ChAT) and choline cholinesterase (AchE). METHODS: A total of 60 Wistar rats were randomized into a sham-operation group, a model group, a medication group and a cluster needling group, 15 rats in each one. In the model group, the medication group and the cluster needling group, the models of Alzheimer's disease (AD) were established by the orienteering injection with Aß1-42 in the bilateral hippocampal CA1 in the rats. In the sham-operation group, the distilled water was injected in bilateral hippocampus of rats. In the medication group, the lavage with aricept was adopted for the basic treatment, once a day, for 4 weeks consecutively. In the cluster needling group, on the base of the treatment as the medication group, the cluster needling at the scalp points was adopted, once a day, 6 times a week, for 4 weeks totally. In the sham-operation group and the model group, the normal feeding was provided. After intervention, the learning and memory ability was measured with Morris water maze in the rats of each group. The changes in the hippocampal gross structure were observed with HE staining. The changes in the positive expressions of hippocampal ChAT and AchE were determined with the immunohistochemical method. RESULTS: Compared with the sham-operation group, the escape latency was prolonged and the percentage of the second quadrant and the frequency of platform leaping were reduced in the rats of the model group (all P<0.01). Compared with the model group, the escape latency was shortened and the percentage of the second quadrant and the frequency of platform leaping were increased in the rats of the cluster needling group and the medication group (P<0.05, P<0.01). Compared with the medication group, the escape latency was shortened and the percentage of the second quadrant and the frequency of platform leaping were increased in the rats of the cluster needling group (all P<0.05). Compared with the sham-operation group, the expression of ChAT was decreased and that of AchE increased in the model group (both P<0.01). Compared with the model group, the difference was not significant in ChAT expression (P>0.05) and the expression of AchE was reduced (P<0.05) in the medication group; the expression of ChAT was increased (P<0.05) and that of AchE decreased (P<0.01) in the cluster needling group. Compared with the medication group, the expression of ChAT was increased and that of AchE decreased in the cluster needling group (both P<0.05). CONCLUSION: The effect mechanism of cluster needling at the scalp points on AD could be related to the up-regulation of ChAT expression and down-regulation of AchE expression in the hippocampus. The combined treatment with the cluster needling and aricept achieves the better therapeutic effect on AD.

High-Performance Photocoupler Based on Perovskite Light Emitting Diode and Photodetector.

Photocoupler is a kind of semiconductor optoelectronic device that integrates light-emitting device (LED) and photodetector. It has found wide application in various fields because of its capability to transmit the electrical signal through the conversion of the electricity-light-electricity. Herein, we report the fabrication of a new photocoupler by simply integrating perovskite quantum dots LED and perovskite photodetector on a glass substrate. The as-fabricated photocoupler showed outstanding characteristics with high current transfer ratio (CTR) of 3.35%, which is highly competitive in comparison with other materials based devices. Furthermore, the perovskite photocoupler had a fast response speed of 8 µs/8.26 µs. By further adding an amplification circuit, the CTR could be enhanced by around 50 times to 172.6%. These results indicate that the present perovskite-based photocouplers may find potential application in future integrated circuit and optoelectronic system.

Silicon/Perovskite Core-Shell Heterojunctions with Light-Trapping Effect for Sensitive Self-Driven Near-Infrared Photodetectors.

In this article, we fabricated a sensitive near-infrared (NIR) light detector by directly coating a layer of Cs-doped FAPbI3 perovskite film onto vertical Si nanowire (SiNW) array. The as-assembled SiNW array/perovskite core-shell heterojunction exhibits a typical rectifying characteristic in darkness and distinct photoresponse characteristics under light illumination. Owning to the remarkable photovoltaic effect, the heterojunction can work as a self-driven NIR detector without an exterior energy supply. Further photoresponse investigation reveals that the photodetector is sensitive in a wide wavelength range with maximum sensitivity at ∼850 nm. The responsivity ( R) and specific detectivity ( D*) are estimated to be 14.86 mA W-1 and 2.04 × 1010 Jones at 0 V bias, respectively, which can be improved to 844.33 mA W-1 and 3.2 × 1011 Jones at a bias voltage of -0.9 V. In addition, the present device also possesses distinct advantages of a large Ilight/ Idark ratio exceeding 104, swift response rate with rise/decay times of 4/8 µs, and relatively good ambient stability. According to our numerical simulation based on finite element method, the superior device performance is associated with strong light-trapping effect in such unique core-shell heterojunction array.

Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe2/Perovskite Heterojunctions.

We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With the availability of the large-area film, we constructed a heterojunction composed of multilayer PtSe2 and Cs-doped FAPbI3, which can function as a self-driven photodetector in a broadband wavelength from the ultraviolet to the near-infrared region. Further photoresponse analysis revealed that the heterojunction device showed outstanding photosensitive characteristics with a large Ilight/ Idark ratio of 5.7 × 103, high responsivity of 117.7 mA W-1, and decent specific detectivity of 2.91 × 1012 Jones at zero bias. More importantly, the rise/fall times were estimated to be 78/60 ns, rendering our device the fastest device among perovskite-2D photodetectors reported to date. In addition, it was also observed that the PtSe2/perovskite photodetector can almost retain its photoresponse properties after storage in ambient conditions for 3 weeks. This study suggests the potential of the present PtSe2/perovskite heterojunction for future air-stable ultrafast photodetecting applications.

Mesoporous anodic α-Fe2O3 interferometer for organic vapor sensing application.

In this work, we reported the utilization of mesoporous α-Fe2O3 films as optical sensors for detecting organic vapors. The mesoporous α-Fe2O3 thin films, which exhibited obvious Fabry-Perot interference fringes in the reflectance spectrum, were successfully fabricated through electrochemical anodization of Fe foils. Through monitoring the optical thickness of the interference fringes, three typical organic species with different vapor pressures and polarities (hexane, acetone and isopropanol) were applied as probes to evaluate the sensitivity of the α-Fe2O3 based interferometric sensor. The experiment results showed that the as-synthesized mesoporous α-Fe2O3 interferometer displayed high reversibility and stability for the three organic vapors, and were especially sensitive to isopropanol, with a detection limit of about 65 ppmv. Moreover, the photocatalytic properties of α-Fe2O3 under visible light are beneficial for degradation of dodecane vapor residues in the nano-pores and refreshment of the sensor, demonstrating good self-cleaning properties of the α-Fe2O3-based interferometric sensor.

High-Performance Red-Light Photodetector Based on Lead-Free Bismuth Halide Perovskite Film.

In this study, we developed a sensitive red-light photodetector (RLPD) based on CsBi3I10 perovskite thin film. This inorganic, lead-free perovskite was fabricated by a simple spin-coating method. Device analysis reveals that the as-assembled RLPD was very sensitive to 650 nm light, with an on/off ratio as high as 105. The responsivity and specific detectivity of the device were estimated to be 21.8 A/W and 1.93 × 1013 Jones, respectively, which are much better than those of other lead halide perovskite devices. In addition, the device shows a fast response (rise time: 0.33 ms; fall time: 0.38 ms) and a high external quantum efficiency (4.13 × 103%). It is also revealed that the RLPD has a very good device stability even after storage for 3 months under ambient conditions. In summary, we suggest that the CsBi3I10 perovskite photodetector developed in this study may have potential applications in future optoelectronic systems.

[A prevalence investigation of blindness and vision impairment in 2009 in older adults of Dachang Blocks of Baoshan District, Shanghai, China].

OBJECTIVE: To investigate the prevalence of blindness and low vision and the leading causes of blindness in residents aged≥60 years in Dachang Blocks of Baoshan District, Shanghai, China. METHODS: A cross-sectional study was carried out by Shanghai Eye Disease Prevention & Treatment Center and the Center for Disease Control and Prevention in Baoshan District of Shanghai from October to December in 2009. Randomly cluster sampling was used to identify the adults aged≥60 years who had lived in Dachang Blocks of Baoshan District, Shanghai for more than 10 years. Presenting visual acuity (PVA) and best-corrected visual acuity (BCVA) based on autorefraction and subjective refraction were measured separately in each eye. External eye, anterior segment and ocular fundus were examined by the ophthalmologist using slit lamp-microscopes direct ophthalmoscopy and non-mydriatic digital camera. And the leading causes of visual impairment were assured. The Chi square test was used between the groups of rate comparison. RESULTS: Of 5199 enumerated subjects≥60 years of age, 87.42% (4545/5199) were examined. All subjects were urban population who were originally changed from the rural population in nearly 10 years. In this population, with best-corrected visual acuity, 30 persons were diagnosed as blindness, 145 persons were diagnosed as low vision. The prevalence of blindness and low vision were 0.67%, 3.19%, respectively. Low vision was associated with female gender. It was statistically significant difference (χ2=4.88, P<0.05). The leading causes of blindness were cataract, macular degeneration, ocular absence or atrophy, glaucoma, and diabetic retinopathy or corneal diseases. With presenting visual acuity, 39 persons were diagnosed as blindness, 401 persons were diagnosed as low vision. The prevalence of blindness and low vision were 0.86%, 8.82%, respectively. Blindness and low vision were associated with older age. The prevalence of blindness and low vision increased rapidly in aged 75 years or older people. The leading causes of blindness were cataract, uncorrected refractive error, macular degeneration, ocular absence or atrophy, glaucoma. Low vision was associated with female gender. It had statistically significant difference (χ2=13.345, P<0.01). CONCLUSIONS: In rapidly urbanized and aging community of Shanghai, cataract, uncorrected refractive error, macular degeneration were the leading causes of blindness with presenting visual acuity. The prevalence of low vision in females was higher than that of males which had statistically significant difference. These kinds of residents needed more targeted eye health education and services.