Temperature Characteristics of Resonance Frequency for Double-Layered Thickness-Shear Resonator.

The effect of the difference in the thickness ratio of the double-layered thickness-shear resonator on the temperature characteristics of the resonance frequency was investigated using a Ca3TaGa3Si2O14 (CTGS) single crystal. Three specimens with thickness ratios of x = 0.25 , 0.33, and 0.50 were prepared using 122° Y - and 171° Y -cut CTGS substrates. For the specimens with x = 0.25 and 0.33, the temperature characteristics varied depending on the order of the resonance mode. For the specimen with x = 0.50 , on the other hand, almost the same temperature characteristics were observed regardless of the order of the resonance mode. To interpret this phenomenon, a new equation for predicting the temperature characteristics of the fundamental mode (first mode) for the double-layered resonator was created using the electric flux density ratio generated in the two substrates. The expected values using this equation were in good agreement with the result of the first mode temperature characteristics.

Thickness-induced metal to insulator transition in Ru nanosheets probed by photoemission spectroscopy: Effects of disorder and Coulomb interaction.

We investigated the electronic structures of mono- and few-layered Ru nanosheets (N layers (L) with N = 1, ~6, and ~9) on Si substrate by ultra-violet and x-ray photoemission spectroscopies. The spectral density of states (DOS) near EF of ~6 L and 1 L is suppressed as it approaches EF in contrast to that of ~9 L, which is consistent with the Ru 3 d core-level shift indicating the reduction of the metallic conductivity. A power law g(ε) ∝ |ε - εF|α well reproduces the observed spectral DOS of ~6 L and 1 L. The evolution of the power factor α suggests that the transition from the metallic state of ~9 L to the 2-dimensional insulating state with the soft Coulomb gap of 1 L through the disordered 3-dimensional metallic state of ~6 L.