Lateral Heterometal Junction Rectifier Fabricated by Sequential Transmetallation of Coordination Nanosheet.

Heterostructures of two-dimensional materials realise novel and enhanced physical phenomena, making them attractive research targets. Compared to inorganic materials, coordination nanosheets have virtually infinite combinations, leading to tunability of physical properties and are promising candidates for heterostructure fabrication. Although stacking of coordination materials into vertical heterostructures is widely reported, reports of lateral coordination material heterostructures are few. Here we show the successful fabrication of a seamless lateral heterojunction showing diode behaviour, by sequential and spatially limited immersion of a new metalladithiolene coordination nanosheet, Zn3 BHT, into aqueous Cu(II) and Fe(II) solutions. Upon immersion, the Zn centres in insulating Zn3 BHT are replaced by Cu or Fe ions, resulting in conductivity. The transmetallation is spatially confined, occurring only within the immersed area. We anticipate that our results will be a starting point towards exploring transmetallation of various two-dimensional materials to produce lateral heterojunctions, by providing a new and facile synthetic route.

Silicon-van der Waals heterointegration for CMOS-compatible logic-in-memory design.

Silicon CMOS-based computing-in-memory encounters design and power challenges, especially in logic-in-memory scenarios requiring nonvolatility and reconfigurability. Here, we report a universal design for nonvolatile reconfigurable devices featuring a 2D/3D heterointegrated configuration. By leveraging the photo-controlled charge trapping/detrapping process and the partially top-gated energy band landscape, the van der Waals heterostacking achieves polarity storage and logic reconfigurable characteristics, respectively. Precise polarity tunability, logic nonvolatility, robustness against high temperature (at 85°C), and near-ideal subthreshold swing (80 mV dec-1) can be done. A comprehensive investigation of dynamic charge fluctuations provides a holistic understanding of the origins of nonvolatile reconfigurability (a trap level of 1013 cm-2 eV-1). Furthermore, we cascade such nonvolatile reconfigurable units into a monolithic circuit layer to demonstrate logic-in-memory computing possibilities, such as high-gain (65 at Vdd = 0.5 V) logic gates. This work provides an innovative 3D heterointegration prototype for future computing-in-memory hardware.

Ambipolar to Unipolar Conversion in C70/Ferrocene Nanosheet Field-Effect Transistors.

Organic cocrystals, which are assembled by noncovalent intermolecular interactions, have garnered intense interest due to their remarkable chemicophysical properties and practical applications. One notable feature, namely, the charge transfer (CT) interactions within the cocrystals, not only facilitates the formation of an ordered supramolecular network but also endows them with desirable semiconductor characteristics. Here, we present the intriguing ambipolar CT properties exhibited by nanosheets composed of single cocrystals of C70/ferrocene (C70/Fc). When heated to 150 °C, the initially ambipolar monoclinic C70/Fc nanosheet-based field-effect transistors (FETs) were transformed into n-type face-centered cubic (fcc) C70 nanosheet-based FETs owing to the elimination of Fc. This thermally induced alteration in the crystal structure was accompanied by an irreversible switching of the semiconducting behavior of the device; thus, the device transitions from ambipolar to unipolar. Importantly, the C70/Fc nanosheet-based FETs were also found to be much more thermally stable than the previously reported C60/Fc nanosheet-based FETs. Furthermore, we conducted visible/near-infrared diffuse reflectance and photoemission yield spectroscopies to investigate the crucial role played by Fc in modulating the CT characteristics. This study provides valuable insights into the overall functionality of these nanosheet structures.

Intermolecular and Electrode-Molecule Bonding in a Single Dimer Junction of Naphthalenethiol as Revealed by Surface-Enhanced Raman Scattering Combined with Transport Measurements.

Electron transport through noncovalent interaction is of fundamental and practical importance in nanomaterials and nanodevices. Recent single-molecule studies employing single-molecule junctions have revealed unique electron transport properties through noncovalent interactions, especially those through a π-π interaction. However, the relationship between the junction structure and electron transport remains elusive due to the insufficient knowledge of geometric structures. In this article, we employ surface-enhanced Raman scattering (SERS) synchronized with current-voltage (I-V) measurements to characterize the junction structure, together with the transport properties, of a single dimer and monomer junction of naphthalenethiol, the former of which was formed by the intermolecular π-π interaction. The correlation analysis of the vibrational energy and electrical conductance enables identifying the intermolecular and molecule-electrode interactions in these molecular junctions and, consequently, addressing the transport properties exclusively associated with the π-π interaction. In addition, the analysis achieved discrimination of the interaction between the NT molecule and the Au electrode of the junction, i.e., Au-π interactions through-π coupling and though-space coupling. The power density spectra support the noncovalent character at the interfaces in the molecular junctions. These results demonstrate that the simultaneous SERS and I-V technique provides a unique means for the structural and electrical investigation of noncovalent interactions.

Thermal and Chemical Phase Engineering of Two-Dimensional Ruthenate.

Monolayer ruthenate nanosheets obtained by exfoliating layered ruthenium oxide exhibit excellent electrical conductivity, redox activity, and catalytic activity, which render them suitable for advanced electronic and energy devices. However, to fully exploit the benefits, we require further structural insights into a complex polymorphic nature and diversity in relevant electronic states of two-dimensional (2D) ruthenate systems. In this study, the 2D structures, stability, and electronic states of 2D ruthenate are investigated on the basis of thermal and chemical phase engineering approaches. We reveal that contrary to a previous report, exfoliation of an oblique 1T phase precursor leads to nanosheets having an identical phase without exfoliation-induced phase transition to a 1H phase. The oblique 1T phase in the nanosheets is found to be metastable and, thus, transforms successively to a rectangular 1T phase upon heating. A phase-controllable synthesis via Co doping affords nanosheets with metastable rectangular and thermally stable hexagonal 1T phases at a Co content of 5-10 and 20 at%, respectively. The 1T phases show metallic electronic states, where the d-d optical transitions between the Ru 4d (t2g) orbital depend on the symmetry of the Ru framework. The Co doping in ruthenate nanosheets unexpectedly suppresses the redox and catalytic activities under acidic conditions. In contrast, the Co2+/3+ redox pair is activated and produces conductive nanosheets with high electrochemical capacitance in an alkaline condition.

Damage-free LED lithography for atomically thin 2D material devices.

Desired electrode patterning on two-dimensional (2D) materials is a foremost step for realizing the full potentials of 2D materials in electronic devices. Here, we introduce an approach for damage-free, on-demand manufacturing of 2D material devices using light-emitting diode (LED) lithography. The advantage of this method lies in mild photolithography by simply combining an ordinary optical microscope with a commercially available LED projector; the low-energy red component is utilized for optical characterization and alignment of devices, whereas the high-energy blue component is utilized for photoresist exposure and development of personal computer designed electrode patterns. This method offers maskless, damage-free photolithography, which is particularly suitable for 2D materials that are sensitive to conventional lithography. We applied this LED lithography to device fabrication of selected nanosheets (MoS2, graphene oxides and RuO2), and achieved damage-free lithography of various patterned electrodes with feature sizes as small as 1-2 µm. The LED lithography offers a useful approach for cost-effective mild lithography without any costly instruments, high vacuum, or complex operation.

Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering.

Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors. The electron beam energy projected into the region outside the electrode diffuses into the main channel, producing selective-area n-type doping in a layered MoTe2 (or MoS2) field-effect transistor. As a result, the Schottky barrier height at the interface between the electrode and the DEBE-treated MoTe2 channel is as low as 12 meV. Additionally, because selective-area doping is possible, DEBE can allow the formation of both n- and p-type doped channels within the same atomic plane, which enables the creation of a nonvolatile and homogeneous MoTe2 p-n rectifier with an ideality factor of 1.1 and a rectification ratio of 1.3 × 103. These results indicate that the DEBE method is a simple, efficient, mask-free, and chemical dopant-free approach to selective-area doping for the development of van der Waals electronics with excellent device performances.

Fullerene C70/porphyrin hybrid nanoarchitectures: single-cocrystal nanoribbons with ambipolar charge transport properties.

In recent years, supramolecular cocrystals containing organic donors and acceptors have been explored as active components in organic field-effect transistors (FETs). Herein, we report the synthesis of novel single-cocrystal nanoribbons with ambipolar charge transport characteristics from C70 and 5,10,15,20-tetrakis(3,5-dimethoxyphenyl)porphyrin (3,5-TPP) in a 3 : 2 ratio. The C70/3,5-TPP nanoribbons exhibited a new strong absorption band in the near-infrared region, indicating the presence of charge-transfer interactions between C70 and 3,5-TPP in the cocrystals. We elucidated the mechanism of the charge-transport properties of the nanoribbons using photoemission yield spectroscopy in air and theoretical calculations. A strong interaction between porphyrins in the one-dimensional porphyrin chains formed in C70/3,5-TPP nanoribbons, which was confirmed by single-crystal X-ray diffraction, plays a crucial role in their hole transport properties.

Non-invasive digital etching of van der Waals semiconductors.

The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS2 reaches up to 1200 cm2 V-1s-1, comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation.

Principal Component Analysis of Surface-Enhanced Raman Scattering Spectra Revealing Isomer-Dependent Electron Transport in Spiropyran Molecular Junctions: Implications for Nanoscale Molecular Electronics.

The characterization of single-molecule structures could provide significant insights into the operation mechanisms of functional devices. Structural transformation via isomerization has been extensively employed to implement device functionalities. Although single-molecule identification has recently been achieved using near-field spectroscopy, discrimination between isomeric forms remains challenging. Further, the structure-function relationship at the single-molecule scale remains unclear. Herein, we report the observation of the isomerization of spiropyran in a single-molecule junction (SMJ) using simultaneous surface-enhanced Raman scattering (SERS) and conductance measurements. SERS spectra were used to discriminate between isomers based on characteristic peaks. Moreover, conductance measurements, in conjunction with the principal component analysis of the SERS spectra, clearly showed the isomeric effect on the conductance of the SMJ.

Surface-Enhanced Raman Scattering Stimulated by Strong Metal-Molecule Interactions in a C60 Single-Molecule Junction.

Specifying the geometric and electronic structures of a metal-molecule interface at the single-molecule level is crucial for the improvement of organic electronics. A single-molecule junction (SMJ) can be used to investigate interfaces because it can be regarded as an elementary unit of the interface structure. Although considerable efforts have been made to this end, the detection of structural changes in SMJs associated with metal-molecule interactions remains challenging. In this study, we detected the surface-enhanced Raman scattering (SERS) signal originating from the metal-molecule interaction change induced by a local structural change in a C60 SMJ. This junction has attracted wide attention owing to its unique electronic and vibronic properties. We fabricated a C60 SMJ using a lithographically fabricated Au electrode and measured the SERS spectra along with the current-voltage (I-V) response. By continuous measurement of SERS for the C60 SMJ, we obtained SERS spectra dependent on the local structural change. The analysis of the I-V response revealed that the vibration energy shift originates from the change in the local structure for different Au-C60 interactions. Based on the discrimination of the states in accordance with the Au-C60 interaction, we found that the probability of SERS for geometry with a large Au-C60 interaction was enhanced.

Two-Dimensional Bis(dithiolene)iron(II) Self-Powered UV Photodetectors with Ultrahigh Air Stability.

Organometallic two-dimensional (2D) nanosheets with tailorable components have recently fascinated the optoelectronic communities due to their solution-processable nature. However, the poor stability of organic molecules may hinder their practical application in photovoltaic devices. Instead of conventional organometallic 2D nanosheets with low weatherability, an air-stable π-conjugated 2D bis(dithiolene)iron(II) (FeBHT) coordination nanosheet (CONASH) is synthesized via bottom-up liquid/liquid interfacial polymerization using benzenehexathiol (BHT) and iron(II) ammonium sulfate [Fe(NH4)2(SO4)2] as precursors. The uncoordinated thiol groups in FeBHT are easily oxidized, but the Fe(NH4)2(SO4)2 dissociation rate is slow, which facilitates the protection of sulfur groups by iron(II) ions. The density functional theory calculates that the resultant FeBHT network gains the oxygen-repelling function for oxidation suppression. In air, the FeBHT CONASH exhibits self-powered photoresponses with short response times (<40 ms) and a spectral responsivity of 6.57 mA W-1, a specific detectivity of 3.13 × 1011 Jones and an external quantum efficiency of 2.23% under 365 nm illumination. Interestingly, the FeBHT self-powered photodetector reveals extremely high long-term air stability, maintaining over 94% of its initial photocurrent after aging for 60 days without encapsulation. These results open the prospect of using organometallic 2D materials in commercialized optoelectronic fields.

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition (CVD) using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V) doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re- and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2 . Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2 -based field-effect transistors have been substantially improved (from ≈10-8 to 10-5 A; ≈104 to 108 ), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.

Water Splitting Induced by Visible Light at a Copper-Based Single-Molecule Junction.

Water splitting is an essential process for converting light energy into easily storable energy in the form of hydrogen. As environmentally preferable catalysts, Cu-based materials have attracted attention as water-splitting catalysts. To enhance the efficiency of water splitting, a reaction process should be developed. Single-molecule junctions (SMJs) are attractive structures for developing these reactions because the molecule electronic state is significantly modulated, and characteristic electromagnetic effects can be expected. Here, water splitting is induced at Cu-based SMJ and the produced hydrogen is characterized at a single-molecule scale by employing electron transport measurements. After visible light irradiation, the conductance states originate from Cu/hydrogen molecule/Cu junctions, while before irradiation, only Cu/water molecule/Cu junctions were observed. The vibration spectra obtained from inelastic electron tunneling spectroscopy combined with the first-principles calculations reveal that the water molecule trapped between the Cu electrodes is decomposed and that hydrogen is produced. Time-dependent and wavelength-dependent measurements show that localized-surface plasmon decomposes the water molecule in the vicinity of the junction. These findings indicate the potential ability of Cu-based materials for photocatalysis.

Ab-initio investigation of preferential triangular self-formation of oxide heterostructures of monolayer [Formula: see text].

Triangular growth patterns of pristine two-dimensional (2D) transition metal dichalcogenides (TMDs) are ubiquitous in experiments. Here, we use first-principles calculations to investigate the growth of triangular shaped oxide islands upon layer-by-layer controlled oxidation in monolayer and few-layer [Formula: see text] systems. Pristine 2D TMDs with a trigonal prismatic geometry prefer the triangular growth morphology due to structural stability arising from the edge chalcogen atoms along its three sides. Our ab-initio energetics and thermodynamic study show that, since the Se atoms are more susceptible to oxygen replacement, the preferential oxidation happens along the Se zigzag lines, producing triangular islands of transition metal oxides. The thermodynamic stability arising from the preferential triangular self-formation of TMD based oxide heterostructures and their electronic properties opens a new avenue for their exploration in advanced electronic and optoelectronic devices.

Facile and Reversible Carrier-Type Manipulation of Layered MoTe2 Toward Long-Term Stable Electronics.

Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability.

On/Off Boundary of Photocatalytic Activity between Single- and Bilayer MoS2.

Molecularly thin two-dimensional (2D) semiconductors are emerging as photocatalysts owing to their layer-number-dependent quantum effects and high charge separation efficiency. However, the correlation among the dimensionality, crystallinity, and photocatalytic activity of such 2D nanomaterials remains unclear. Herein, a Ag photoreduction technique coupled with microscopic analyses is employed to spatially resolve the photocatalytic activity of MoS2 as a model catalyst. Interestingly, we find that only monolayer (1L)-MoS2 is active for a Ag photoreduction reaction. The photocatalytic activity of 1L-MoS2 is enhanced by a built-in electrical field originated from the MoS2/SiO2 interface, instead of by the specific surface structure and quantum electronic state of 1L-MoS2. Furthermore, we observe photocatalytic active sites to be geometrically distributed on triangular 1L-MoS2 crystals, wherein the Ag particles are preferentially deposited on the outermost zigzag edges and defective inner parts of the triangular grains. The degradation of photocatalytic activity and electron mobility with the formation of Mo(VI) species indicates that the species inhibit the in-plane diffusion of the photogenerated electrons to the reductive sites. The monolayer-selectivity, activation, and inactivation mechanisms, unveiled in this work, will offer future directions in designing 2D nanophotocatalysts.

Solution-processed organometallic quasi-two-dimensional nanosheets as a hole buffer layer for organic light-emitting devices.

Two-dimensional (2D) vdW materials have been integrated into optoelectronic devices to achieve exceptional functionality. However, the integration of large-area 2D thin films into organic light-emitting devices (OLEDs) remains challenging because of the finite number of inorganic 2D materials and the high-temperature requirements of their deposition process. The construction of 2D organometallic materials holds immense potential because of their solution synthesis and unlimited structural and functional diversity. Here, we report a facile route using an oil-water interfacial coordination reaction between organic ligands and divalent metal ions to synthesize crystalline quasi-2D organometallic bis(dithiolato)nickel (NiDT) nanosheets with a centimeter scale and a tunable thickness. The NiDT nanosheets can be directly integrated into OLEDs for use as a hole buffer layer and a fluorescent mounting medium without the aid of a transfer process. Moreover, OLEDs with NiDT nanosheets show not only comparable efficiency to conventional OLEDs but also prolonged device lifetime by nearly 2 times. These results open up a new dimension to use quasi-2D organometallic nanosheets as functional layers in large-area organic devices.

One-Dimensional Fullerene/Porphyrin Cocrystals: Near-Infrared Light Sensing through Component Interactions.

Recently, organic donor-acceptor (D-A) cocrystals have attracted special interest as functional materials because of their unique chemical and physical properties that are not exhibited by simple mixtures of their components. Herein, we report the preparation of one-dimensional novel D-A cocrystals from C60 and 5,10,15,20-tetrakis(3,5-dimethoxyphenyl)porphyrin (3,5-TPP); these cocrystals have near-infrared (NIR) light-sensing abilities, despite each of their component molecule individually having no NIR light-sensing properties. Micrometer-sized rectangular columnar C60-3,5-TPP cocrystals were produced by a simple liquid-liquid interfacial precipitation method. The cocrystals exhibit a new strong transition in the NIR region indicative of the existence of charge-transfer interactions between C60 and 3,5-TPP in the cocrystals. The C60-3,5-TPP cocrystals showed n-type transport characteristics with NIR light-sensing properties when the cocrystals were incorporated in bottom-gate/bottom-contact organic phototransistors, revealing that organic cocrystals with suitable charge-transfer interaction are useful as functional materials for the creation of novel NIR-light-sensing devices.

Oxygen-Sensitive Layered MoTe2 Channels for Environmental Detection.

The oxygen (O2)-dependent resistance change of multilayered molybdenum ditelluride (MoTe2) channels was characterized. A variation of the channel resistance could reproducibly determine relative O2 content (denoted as the O2 index). We found that Joule heating in a layered MoTe2 field-effect transistor caused the O2 index to decrease drastically from 100 to 12.1% in back gate modulation. Furthermore, Joule heating caused effective O2 desorption from the MoTe2 surface and repeatable O2 detection by multilayered MoTe2 channels was realized. This work not only explored the influence of O2 on the electrical properties of multilayered MoTe2 channels but also revealed that MoTe2 channels are promising for sensing O2 in an environmental condition.